Carbon nanotubes fabrication and hydrogen production
    1.
    发明授权
    Carbon nanotubes fabrication and hydrogen production 失效
    碳纳米管制造和氢气生产

    公开(公告)号:US07214360B2

    公开(公告)日:2007-05-08

    申请号:US10286214

    申请日:2002-10-31

    CPC classification number: D01F9/1272 B82Y30/00 D01F9/1274 Y10S977/843

    Abstract: This invention relates to a method of producing multi-walled carbon nanotubes (MWNT) by catalytic decomposition of gaseous carbon-containing compounds over a transition metal-based catalyst. The catalyst comprises A-B and a support, wherein A is selected from the group VIII transition metal elements and B is selected from the Group VIB transition metal elements. An additional aspect of this invention includes a method of preparing hydrogen gas.

    Abstract translation: 本发明涉及通过在过渡金属基催化剂上催化分解气态含碳化合物来生产多壁碳纳米管(MWNT)的方法。 催化剂包含A-B和载体,其中A选自VIII族过渡金属元素,B选自VIB族过渡金属元素。 本发明的另一方面包括制备氢气的方法。

    Highly Dispersed Metal Catalysts
    2.
    发明申请
    Highly Dispersed Metal Catalysts 有权
    高度分散的金属催化剂

    公开(公告)号:US20100008840A1

    公开(公告)日:2010-01-14

    申请号:US12085066

    申请日:2006-11-13

    Abstract: The present invention relates to a novel method for preparing a new type of catalyst for the oxidation of CO in a reactant gas or air. The method provides the preparation of a catalyst having nano-sized metal particles and a capping agent deposited on a solid support. The size and distribution of the metal particles can be easily controlled by adjusting reaction condition and the capping agent used. The catalyst prepared has high activity at low temperature toward selective oxidation of CO and is stable over an extended period of time. The catalyst can be used in air filter devices, hydrogen purification processes, automotive emission control devices (decomposition of NOx, x is the integer 1 or 2), F-T synthesis, preparation of fuel-cell electrode, photocatalysis and sensors.

    Abstract translation: 本发明涉及一种制备用于在反应物气体或空气中氧化CO的新型催化剂的新方法。 该方法提供了制备具有纳米尺寸金属颗粒和沉积在固体载体上的封端剂的催化剂。 可以通过调节反应条件和使用的封端剂容易地控制金属颗粒的尺寸和分布。 制备的催化剂在低温下对CO的选择性氧化具有高活性,并且在长时间内是稳定的。 催化剂可用于空气过滤装置,氢气净化工艺,汽车排放控制装置(NOx分解,x为整数1或2),F-T合成,燃料电池电极的制备,光催化和传感器。

    Highly dispersed metal catalysts
    4.
    发明授权
    Highly dispersed metal catalysts 有权
    高度分散的金属催化剂

    公开(公告)号:US08926937B2

    公开(公告)日:2015-01-06

    申请号:US12085066

    申请日:2006-11-13

    Abstract: The present invention relates to a novel method for preparing a new type of catalyst for the oxidation of CO in a reactant gas or air. The method provides the preparation of a catalyst having nano-sized metal particles and a capping agent deposited on a solid support. The size and distribution of the metal particles can be easily controlled by adjusting reaction condition and the capping agent used. The catalyst prepared has high activity at low temperature toward selective oxidation of CO and is stable over an extended period of time. The catalyst can be used in air filter devices, hydrogen purification processes, automotive emission control devices (decomposition of NOx, x is the integer 1 or 2), F-T synthesis, preparation of fuel-cell electrode, photocatalysis and sensors.

    Abstract translation: 本发明涉及一种制备用于在反应物气体或空气中氧化CO的新型催化剂的新方法。 该方法提供了制备具有纳米尺寸金属颗粒和沉积在固体载体上的封端剂的催化剂。 可以通过调节反应条件和使用的封端剂容易地控制金属颗粒的尺寸和分布。 制备的催化剂在低温下对CO的选择性氧化具有高活性,并且在长时间内是稳定的。 催化剂可用于空气过滤装置,氢气净化工艺,汽车排放控制装置(NOx分解,x为整数1或2),F-T合成,燃料电池电极的制备,光催化和传感器。

    METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE
    8.
    发明申请
    METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE 有权
    在外源性侧向氮化镓模板上形成的氧化锌膜的方法

    公开(公告)号:US20120018699A1

    公开(公告)日:2012-01-26

    申请号:US13112315

    申请日:2011-05-20

    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride or direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm−2, which will find important applications in future electronic and optoelectronic devices.

    Abstract translation: 提出了一种高质量氧化锌的生长方法,包括以下步骤:(1)在1000℃的温度下在蓝宝石衬底上生长氮化镓层; (2)将SiO 2掩模图案化成在氮化镓<100>或<1120>方向上取向的条纹; (3)通过选择生长温度和反应器控制小平面,生长(ELO)氮化镓层的外延横向过度生长; (4)通过化学气相沉积(CVD)在小面ELO氮化镓模板上沉积氧化锌膜。 可以在氮化镓模板上生长具有减少的晶体缺陷数量的高质量的氧化锌晶体。 该方法可用于制备位错密度低于104 / cm-2的氧化锌薄膜,这将在未来的电子和光电子器件中找到重要应用。

    PROCESS FOR RELEASING HYDROGEN GAS
    9.
    发明申请
    PROCESS FOR RELEASING HYDROGEN GAS 审中-公开
    释放氢气的方法

    公开(公告)号:US20100135899A1

    公开(公告)日:2010-06-03

    申请号:US12520431

    申请日:2006-12-20

    Abstract: A process for releasing hydrogen gas is disclosed. The process comprises the step of irradiating hydrogen storage particles dispersed within thermal promoter particles under conditions to release said hydrogen from said hydrogen storage particles. A system for implementing the process as well as uses for the hydrogen gas released from the above process are disclosed.

    Abstract translation: 公开了一种释放氢气的方法。 该方法包括在从所述储氢颗粒释放所述氢的条件下照射分散在热启动剂颗粒内的储氢颗粒的步骤。 公开了一种用于实施该方法的系统以及从上述方法释放的氢气的用途。

    Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
    10.
    发明申请
    Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template 有权
    在外延横向过度生长的氮化镓模板上生长的氧化锌膜的方法

    公开(公告)号:US20100102307A1

    公开(公告)日:2010-04-29

    申请号:US12288977

    申请日:2008-10-24

    Abstract: A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO2 mask into stripes oriented in the gallium nitride or direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 104/cm−2, which will find important applications in future electronic and optoelectronic devices.

    Abstract translation: 提出了一种高质量氧化锌的生长方法,包括以下步骤:(1)在1000℃的温度下在蓝宝石衬底上生长氮化镓层; (2)将SiO 2掩模图案化成在氮化镓<100>或<1120>方向上取向的条纹; (3)通过选择生长温度和反应器控制小平面,生长(ELO)氮化镓层的外延横向过度生长; (4)通过化学气相沉积(CVD)在小面ELO氮化镓模板上沉积氧化锌膜。 可以在氮化镓模板上生长具有减少的晶体缺陷数量的高质量的氧化锌晶体。 该方法可用于制备位错密度低于104 / cm-2的氧化锌薄膜,这将在未来的电子和光电子器件中找到重要应用。

Patent Agency Ranking