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公开(公告)号：US09406839B2
公开(公告)日：2016-08-02
申请号：US14833832
申请日：2015-08-24
Applicant: Jung Sub Kim , Yeon Woo Seo , Dong Gun Lee , Byung Kyu Chung , Dae Myung Chun , Soo Jeong Choi
Inventor： Jung Sub Kim , Yeon Woo Seo , Dong Gun Lee , Byung Kyu Chung , Dae Myung Chun , Soo Jeong Choi
CPC classification number: H01L33/007 , B82Y20/00 , F21K9/232 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
Abstract translation: 纳米结构半导体发光器件包括：由第一导电型氮化物半导体材料形成的基极层; 以及设置在所述基底层上以彼此间隔开的多个发光纳米结构，其中所述多个发光纳米结构中的每一个包括：由第一导电型氮化物半导体材料形成的纳米孔，设置在所述基底层上的有源层 包括纳米孔的表面，并且包括量子阱，其被划分为在其厚度方向上具有不同铟（In）组成比的第一和第二区域; 以及设置在所述有源层上的第二导电型半导体层，并且所述第一区域中的In组成比高于所述第二区域中的In组成比。
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公开(公告)号：US20150118777A1
公开(公告)日：2015-04-30
申请号：US14485663
申请日：2014-09-12
Applicant: Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
Inventor： Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
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Patent Agency Ranking
公开(公告)号：US20160013362A1
公开(公告)日：2016-01-14
申请号：US14752814
申请日：2015-06-26
Applicant: Jae Hyeok HEO , Jung Sub KIM , Young Jin CHOI , Jin Sub LEE , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN
Inventor： Jae Hyeok HEO , Jung Sub KIM , Young Jin CHOI , Jin Sub LEE , Sam Mook KANG , Yeon Woo SEO , Han Kyu SEONG , Dae Myung CHUN
CPC classification number: H01L33/06 , H01L27/153 , H01L33/0025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H05B33/0803 , H01L2924/00014
Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
Abstract translation: 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。
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公开(公告)号：US20150303350A1
公开(公告)日：2015-10-22
申请号：US14790047
申请日：2015-07-02
Applicant: Yeon Woo SEO , Jung-Sub KIM , Young Jin CHOI , Denis SANNIKOV , Han Kyu SEONG , Dae Myung CHUN , Jae Hyeok HEO
Inventor： Yeon Woo SEO , Jung-Sub KIM , Young Jin CHOI , Denis SANNIKOV , Han Kyu SEONG , Dae Myung CHUN , Jae Hyeok HEO
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
Abstract translation: 提供一种制造具有多个纳米发光结构的发光器件的方法。 该方法包括在衬底上沉积第一导电型半导体材料以形成基底层。 在基层上形成具有多个开口的掩模。 第一导电型氮化物半导体材料沉积在掩模的开口中以形成具有由掩模界定的主要部分和暴露的尖端部分的多个纳米孔。 电流阻挡层沉积在纳米孔的尖端部分上。 去除掩模的一部分以暴露纳米孔的主要部分。 活性物质层沉积在多个纳米孔上。 第二导电型氮化物半导体层沉积在活性材料层上。
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公开(公告)号：US20160013365A1
公开(公告)日：2016-01-14
申请号：US14627721
申请日：2015-02-20
Applicant: Dae Myung CHUN , Ji Hye YEON , Jae Hyeok HEO , Hyun Seong KUM , Han Kyu SEONG , Young Jin CHOI
Inventor： Dae Myung CHUN , Ji Hye YEON , Jae Hyeok HEO , Hyun Seong KUM , Han Kyu SEONG , Young Jin CHOI
CPC classification number: H01L33/24 , H01L33/007 , H01L33/08 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.
Abstract translation: 半导体发光器件的制造方法可以包括以下步骤：形成掩模层和模具层，所述模具层具有暴露基底层的部分的多个开口，形成多个第一导电型半导体芯，每个第一导电型半导体芯包括延伸穿过的主体部分 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分，并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域，使得尖端部分的顶点位于主体部分的中心垂直轴线上，去除模具层，并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。
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公开(公告)号：US20160056331A1
公开(公告)日：2016-02-25
申请号：US14833832
申请日：2015-08-24
Applicant: Jung Sub KIM , Yeon Woo SEO , Dong Gun LEE , Byung Kyu CHUNG , Dae Myung CHUN , Soo Jeong CHOI
Inventor： Jung Sub KIM , Yeon Woo SEO , Dong Gun LEE , Byung Kyu CHUNG , Dae Myung CHUN , Soo Jeong CHOI
CPC classification number: H01L33/007 , B82Y20/00 , F21K9/232 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
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公开(公告)号：US09099573B2
公开(公告)日：2015-08-04
申请号：US14485663
申请日：2014-09-12
Applicant: Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
Inventor： Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
Abstract translation: 提供一种制造具有多个纳米发光结构的发光器件的方法。 该方法包括在衬底上沉积第一导电型半导体材料以形成基底层。 在基层上形成具有多个开口的掩模。 第一导电型氮化物半导体材料沉积在掩模的开口中以形成具有由掩模界定的主要部分和暴露的尖端部分的多个纳米孔。 电流阻挡层沉积在纳米孔的尖端部分上。 去除掩模的一部分以暴露纳米孔的主要部分。 活性物质层沉积在多个纳米孔上。 第二导电型氮化物半导体层沉积在活性材料层上。
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