公开(公告)号：US20140046013A1

公开(公告)日：2014-02-13

申请号：US14114065

申请日：2012-04-26

Applicant: Sang Jin Moon ,  Jong Cheol Lee ,  Won Suk Shin ,  Sang Kyu Lee

Inventor： Sang Jin Moon ,  Jong Cheol Lee ,  Won Suk Shin ,  Sang Kyu Lee

IPC: H01L51/00

CPC classification number: H01L51/0074 ,  C07D495/04 ,  H01L51/0036

Abstract: Provided are an organic semiconductor compound, a method for preparing same, a polymer compound having the organic semiconductor compound of the present invention as a monomer, and an organic semiconductor device containing the polymer compound. Said organic semiconductor compound has side chains in the chemical structure thereof, and is highly soluble in a solvent, and therefore the organic semiconductor compound can be effectively used in solution-based processes. The organic semiconductor device containing the polymer compound according to the present invention yields high manufacturing efficiency

Abstract translation: 提供有机半导体化合物，其制备方法，具有本发明的有机半导体化合物作为单体的高分子化合物和含有高分子化合物的有机半导体器件。 所述有机半导体化合物在其化学结构中具有侧链，并且在溶剂中高度可溶，因此有机半导体化合物可以有效地用于基于溶液的方法。 含有本发明的高分子化合物的有机半导体装置的制造效率高

公开(公告)号：US08617950B2

公开(公告)日：2013-12-31

申请号：US13438151

申请日：2012-04-03

Applicant: Bong Jin Kuh ,  Jong Cheol Lee ,  Yong Suk Tak ,  Young Sub You ,  Kyu Ho Cho ,  Jong Sung Lim

Inventor： Bong Jin Kuh ,  Jong Cheol Lee ,  Yong Suk Tak ,  Young Sub You ,  Kyu Ho Cho ,  Jong Sung Lim

IPC: H01L21/8242

CPC classification number: H01L28/86 ,  H01L27/10817 ,  H01L28/90

Abstract: A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.

Abstract translation: 通过在衬底上形成不是硅的氧化物（例如多晶硅或掺杂多晶硅）的硅基材料的模制层，通过模制层形成开口，形成沿着 开口，随后在开口中形成下电极，然后去除模层和阻挡层图案，最后在下电极上依次形成电介质层和上电极。

公开(公告)号：US20120305082A1

公开(公告)日：2012-12-06

申请号：US13513761

申请日：2010-10-13

Applicant: Sang Jin Moon ,  Jong Cheol Lee ,  Won Wook So ,  Won Suk Shin ,  Sang Kyu Lee ,  Sung Cheol Yoon ,  Dohoon Hwang ,  Chang Jin Lee

Inventor： Sang Jin Moon ,  Jong Cheol Lee ,  Won Wook So ,  Won Suk Shin ,  Sang Kyu Lee ,  Sung Cheol Yoon ,  Dohoon Hwang ,  Chang Jin Lee

IPC: C08G75/32 ,  C08G77/60 ,  H01L51/46

CPC classification number: H01L51/0043 ,  C08G61/126 ,  C08G2261/314 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/411 ,  C08L65/00 ,  H01L51/0036 ,  H01L51/0054 ,  H01L51/0094 ,  H01L51/42 ,  Y02E10/549

Abstract: The present invention relates to a pyrene-containing conductive polymer represented by formula 1 and an organic solar cell comprising the same as an organic photovoltaic material. The conductive polymer has improved hole mobility as a result of introducing a specific amount of pyrene either into a polymer, which consists only of a donor functional group comprising one or more aromatic monomers, or into a donor-acceptor type polymer comprising a repeating acceptor introduced into a donor functional group. Thus, the conductive polymer can be used as an organic photovoltaic material in organic photodiodes (OPDs), organic light-emitting diodes (OLEDs), organic thin-film transistors (OTFTs), organic solar cells and the like. In addition, an organic solar cell showing high power conversion efficiency (PCE) can be provided using an organic photovoltaic material comprising the pyrene-containing conductive polymer as an electron donor.

Abstract translation: 本发明涉及由式1表示的含芘的导电聚合物和包含与有机光伏材料相同的有机太阳能电池。 导电聚合物由于将特定量的芘引入聚合物（其仅由包含一种或多种芳族单体的供体官能团组成）或引入包含重复受体的供体 - 受体型聚合物的结果而具有改善的空穴迁移率 进入供体功能组。 因此，导电聚合物可以用作有机光电二极管（OPD），有机发光二极管（OLED），有机薄膜晶体管（OTFT），有机太阳能电池等中的有机光伏材料。 此外，可以使用包含含芘的导电聚合物作为电子给体的有机光伏材料来提供显示高功率转换效率（PCE）的有机太阳能电池。

公开(公告)号：US20120276721A1

公开(公告)日：2012-11-01

申请号：US13459136

申请日：2012-04-28

Applicant: Suk-jin Chung ,  Jong-cheol Lee ,  Youn-soo Kim ,  Cha-young Yoo ,  Sang-yeol Kang

Inventor： Suk-jin Chung ,  Jong-cheol Lee ,  Youn-soo Kim ,  Cha-young Yoo ,  Sang-yeol Kang

IPC: H01L21/20

CPC classification number: H01L21/02178 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/28282 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/1157 ,  H01L27/11582 ,  H01L28/91 ,  H01L29/66795 ,  H01L29/7926

Abstract: A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.

Abstract translation: 一种形成氧化物层的方法。 该方法包括：在基板的表面上形成反应抑制性官能团层; 在反应抑制官能团的层上形成金属或半导体的前体层; 以及氧化金属或半导体的前体以获得金属氧化物或半导体氧化物的层。 根据该方法，可以形成具有高厚度均匀性的氧化物层，并且可以制造具有优异电特性的半导体器件。

公开(公告)号：US20120264271A1

公开(公告)日：2012-10-18

申请号：US13438151

申请日：2012-04-03

Applicant: BONG JIN KUH ,  JONG-CHEOL LEE ,  YONG-SUK TAK ,  YOUNG-SUB YOU ,  KYU-HO CHO ,  JONG-SUNG LIM

Inventor： BONG JIN KUH ,  JONG-CHEOL LEE ,  YONG-SUK TAK ,  YOUNG-SUB YOU ,  KYU-HO CHO ,  JONG-SUNG LIM

IPC: H01L21/02

CPC classification number: H01L28/86 ,  H01L27/10817 ,  H01L28/90

Abstract: A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode.

Abstract translation: 通过在衬底上形成不是硅的氧化物（例如多晶硅或掺杂多晶硅）的硅基材料的模制层，通过模制层形成开口，形成沿着 开口，随后在开口中形成下电极，然后去除模层和阻挡层图案，最后在下电极上依次形成电介质层和上电极。

公开(公告)号：US08110473B2

公开(公告)日：2012-02-07

申请号：US12635013

申请日：2009-12-10

Applicant: Sang-yeol Kang ,  Jong-cheol Lee ,  Ki-vin Lim ,  Hoon-sang Choi ,  Eun-ae Chung

Inventor： Sang-yeol Kang ,  Jong-cheol Lee ,  Ki-vin Lim ,  Hoon-sang Choi ,  Eun-ae Chung

IPC: H01L21/02

CPC classification number: H01L28/40 ,  H01L27/10852

Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.

Abstract translation: 公开了一种包括多层介质膜的半导体器件和用于制造半导体器件的方法。 所述多层电介质膜包括具有四方晶系结构的一型电介质膜，其中，所述一型电介质膜包含第一物质。 所述多层绝缘膜还包括也具有四方晶系结构的二型电介质膜，其中所述二型电介质膜包括与所述第一物质不同的第二物质，并且所述二型电介质膜的介电常数大于 介电常数介电常数为1。

公开(公告)号：US07869227B2

公开(公告)日：2011-01-11

申请号：US11148312

申请日：2005-06-09

Applicant: Seung-eon Lee ,  Kyoung-geun Lee ,  Jong-cheol Lee

Inventor： Seung-eon Lee ,  Kyoung-geun Lee ,  Jong-cheol Lee

IPC: H02M3/335

CPC classification number: H02M1/4208 ,  Y02B70/126

Abstract: A method of supplying a power to elements in a power supply apparatus including a primary side and a second side. Particularly, a method of supplying a driving power to an element at the primary side of the power supply apparatus from a primary coil of a transformer. A power factor improvement section improves a power factor of a received alternating current (AC) power. A transformer then receives the AC power having the improved power factor from a primary coil and generates an induced power at a secondary coil. The transformer then provides the AC power to drive a predetermined element located at the primary side of the power supply apparatus from the primary coil.

Abstract translation: 向包括初级侧和第二侧的电源装置中的元件供电的方法。 特别是一种从变压器的初级线圈向电源装置的初级侧的元件提供驱动电力的方法。 功率因数改善部分提高了接收的交流（AC）功率的功率因数。 然后，变压器从初级线圈接收具有改善的功率因数的AC电力，并在次级线圈处产生感应功率。 然后，变压器提供AC电力以从初级线圈驱动位于电源装置初级侧的预定元件。

公开(公告)号：US07648874B2

公开(公告)日：2010-01-19

申请号：US11339416

申请日：2006-01-25

Applicant: Jong-Cheol Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Gab-Jin Nam ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo ,  Ha-Jin Lim ,  Yun-Seok Kim

Inventor： Jong-Cheol Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Gab-Jin Nam ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo ,  Ha-Jin Lim ,  Yun-Seok Kim

IPC: H01L21/00

CPC classification number: H01L21/022 ,  C23C14/5826 ,  C23C14/586 ,  C23C16/56 ,  H01L21/02142 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31645 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/115 ,  H01L27/11521 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.

Abstract translation: 在制造电介质结构的方法中，在通过使用掺杂有硅的金属氧化物在基板上形成第一介电层之后，将基板放置在室的基座上。 通过在控制基座和接地之间的电压差的同时用等离子体处理第一电介质层，在第一电介质层上形成第二电介质层。 在第一电介质层上形成包括掺杂有足够的氮含量的硅的金属氮氧化物的第二电介质层。 因此，可以提高包括第一和第二电介质层的电介质结构的介电性能，并且可以大大降低泄漏电流。 通过使电介质结构适应于栅极绝缘层和/或电容器或非易失性半导体存储器件的电介质层，可以提高电容和电性能。

公开(公告)号：US20100003505A1

公开(公告)日：2010-01-07

申请号：US12310154

申请日：2006-12-27

Applicant: Chan-Oh Yoon ,  Jong-Cheol Lee ,  Hyung-Min Cha

Inventor： Chan-Oh Yoon ,  Jong-Cheol Lee ,  Hyung-Min Cha

IPC: B32B27/36 ,  B32B23/00 ,  B32B27/34 ,  B32B27/40 ,  B32B27/32 ,  B32B27/38

CPC classification number: B32B27/08 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/269 ,  Y10T428/31511 ,  Y10T428/3154 ,  Y10T428/31551 ,  Y10T428/31725 ,  Y10T428/31786 ,  Y10T428/31931 ,  Y10T428/31938 ,  Y10T428/31971

Abstract: Disclosed herein is a waterproof sheet. More specifically, disclosed herein is a waterproof sheet with improved water resistance, airtightness and durability by which the waterproof sheet is produced by adhering a polyvinylchloride (PVC) alloy sheet as an plastic sheet to the at least one surface of a polyester film as an intermediate.

Abstract translation: 本文公开了防水片材。 更具体地说，本文公开了一种防水片材，其具有改善的耐水性，气密性和耐久性，通过该防水片材将聚氯乙烯（PVC）合金片材作为塑料片粘附到聚酯膜的至少一个表面上作为中间体 。

公开(公告)号：US20090195962A1

公开(公告)日：2009-08-06

申请号：US12392360

申请日：2009-02-25

Applicant: Jong-Cheol Lee ,  Kyoung-Ryul Yoon ,  Ki-Vin Im ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Jin-Il Lee

Inventor： Jong-Cheol Lee ,  Kyoung-Ryul Yoon ,  Ki-Vin Im ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Jin-Il Lee

IPC: H01G4/008

CPC classification number: H01L27/10852 ,  H01L27/10817 ,  H01L28/75 ,  H01L28/90

Abstract: A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.

Abstract translation: 多层电极结构具有包括铝的导电层，形成在导电层上的氧化物层和氧扩散阻挡层。 氧化物层包括氧化锆和/或氧化钛。 通过再氧化氧化层，在导电层和氧化物层之间的界面处形成氧扩散阻挡层。 氧扩散阻挡层包括氧化铝。