摘要:
An apparatus is provided for supplying a plurality of chemicals or gases to the surface of a substrate to clean and dry the substrate. The apparatus includes a substrate support unit with a chuck on which a substrate is loaded, a bottom chamber having an open top and configured to surround the circumference of the chuck, a top chamber configured to open or close the top of the bottom chamber such that a drying treatment for the substrate is performed while the substrate is isolated from the outside, and an indirect injection nozzle installed at the edge of the top chamber and configured to inject drying fluid toward the center of the top chamber such that the drying fluid is indirectly injected to the substrate. According to the apparatus, it is possible to enhance a substrate drying efficiency, suppress external contamination, and prevent the formation of an oxide layer.
摘要:
A chucking member configured to chuck the edge of a substrate includes a chucking pin which is eccentric from the rotation center. The chucking pin has a streamline shape and includes a first front-end portion disposed at the front end relative to the flow of an air current generated by the rotation of the substrate and a first back-end portion disposed at the back end relative to the flow of the air current. The first front-end portion includes a first tip, and the first front-end portion has a round shape.
摘要:
A chucking member configured to chuck the edge of a substrate includes a chucking pin which is eccentric from the rotation center. The chucking pin has a streamline shape and includes a first front-end portion disposed at the front end relative to the flow of an air current generated by the rotation of the substrate and a first back-end portion disposed at the back end relative to the flow of the air current. The first front-end portion includes a first tip, and the first front-end portion has a round shape.
摘要:
An apparatus is provided for supplying a plurality of chemicals or gases to the surface of a substrate to clean and dry the substrate. The apparatus includes a substrate support unit with a chuck on which a substrate is loaded, a bottom chamber having an open top and configured to surround the circumference of the chuck, a top chamber configured to open or close the top of the bottom chamber such that a drying treatment for the substrate is performed while the substrate is isolated from the outside, and an indirect injection nozzle installed at the edge of the top chamber and configured to inject drying fluid toward the center of the top chamber such that the drying fluid is indirectly injected to the substrate. According to the apparatus, it is possible to enhance a substrate drying efficiency, suppress external contamination, and prevent the formation of an oxide layer.
摘要:
A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.
摘要:
A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.
摘要:
The present invention is directed to a substrate dryer, a substrate treating apparatus including the substrate dryer, and a substrate treating method. The substrate dryer includes a chamber, a process chamber constituting one part of the chamber and provided for supplying supercritical fluid to a substrate to dry the substrate, and a high-pressure chamber constituting the other part of the chamber and provided for boosting the process chamber above a critical pressure. According to the present invention, the substrate drying chamber is boosted fast by the high-pressure chamber to change to a supercritical state and thus a substrate dry treatment is performed using supercritical fluid.
摘要:
Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head includes: an upper plate including a plurality of gas channels forming process gas flow paths and gas injection holes formed in the gas channels, high-frequency power being applied to the upper plate to excite the process gas into plasma; a baffle plate disposed under the upper plate and including a plurality of holes to uniformly distribute the process gas; and an injection plate disposed under the baffle plate to inject the process gas supplied through the baffle plate to a substrate.
摘要:
A substrate treating apparatus includes a substrate support unit with a chuck on which a substrate is loaded; a bottom chamber having an open top and configured to surround the circumference of the chuck; a top chamber configured to open or close the top of the bottom chamber such that the substrate is dried while the top chamber is sealed from the outside; and a direct injection nozzle member installed at the top chamber to inject fluid directly to the substrate while the top of the bottom chamber is closed. According to the substrate treating apparatus, drying efficiency of an entire substrate is enhanced, external contaminants are blocked, and generation of an oxide layer is suppressed.
摘要:
A substrate treating apparatus includes a substrate support unit with a chuck on which a substrate is loaded; a bottom chamber having an open top and configured to surround the circumference of the chuck; a top chamber configured to open or close the top of the bottom chamber such that the substrate is dried while the top chamber is sealed from the outside; and a direct injection nozzle member installed at the top chamber to inject fluid directly to the substrate while the top of the bottom chamber is closed. According to the substrate treating apparatus, drying efficiency of an entire substrate is enhanced, external contaminants are blocked, and generation of an oxide layer is suppressed.