公开(公告)号：US20050094457A1

公开(公告)日：2005-05-05

申请号：US10425257

申请日：2003-04-28

申请人： Zheng Chen ,  Vikram Joshi ,  Narayan Solayappan ,  Carlos Paz de Araujo ,  Larry McMillan

发明人： Zheng Chen ,  Vikram Joshi ,  Narayan Solayappan ,  Carlos Paz de Araujo ,  Larry McMillan

IPC分类号： G11C11/22 ,  H01L27/06 ,  H01L27/115 ,  H01L29/78 ,  G11C7/00

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C11/223 ,  H01L27/0629 ,  H01L29/78391

摘要： A ferroelectric memory includes a group of memory cells, each cell having a ferroelectric memory element, a drive line on which a voltage for writing information to the group of memory cells is placed, and a bit line on which information to be read out of the group of memory cells is placed. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. A preamplifier is connected between the memory cells and the bit line. A set switch is connected between the drive line and the memory cells, and a reset switch is connected to the memory cells in parallel with the preamplifier. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.

摘要翻译： 铁电存储器包括一组存储器单元，每个单元具有铁电存储元件，其上放置用于向存储单元组写入信息的电压的驱动线以及从该存储单元读出的信息的位线 放置一组存储单元。 通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。 前置放大器连接在存储单元和位线之间。 一个开关连接在驱动线和存储单元之间，复位开关与前置放大器并联连接到存储单元。 在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

公开(公告)号：US20060194348A1

公开(公告)日：2006-08-31

申请号：US11411767

申请日：2006-04-26

申请人： Carlos Araujo ,  Larry McMillan ,  Narayan Solayappan ,  Vikram Joshi

发明人： Carlos Araujo ,  Larry McMillan ,  Narayan Solayappan ,  Vikram Joshi

IPC分类号： H01L21/00 ,  H01L29/94

CPC分类号： H01L27/11502 ,  C30B29/32 ,  C30B29/68 ,  G11C11/22 ,  H01L21/7687 ,  H01L23/642 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.

摘要翻译： 三维（“3-D”）存储电容器包括底电极，铁电薄膜和符合绝缘体层的3-D表面的顶电极。 电容面积大于电容器的水平占位面积。 优选地，电容器的占地面积小于0.2nm 2，并且相应的电容面积通常在0.4nm±2nm至1.0nm 2范围内 铁电薄膜优选具有不超过60nm的厚度。 包括底电极，铁电薄膜和顶电极的电容器层压体优选具有不超过200nm的厚度。 用于沉积厚度在30nm至90nm范围内的铁电薄膜的低热预算MOCVD方法包括在沉积顶电极之前的RTP处理和在沉积顶电极之后进行RTP处理并蚀刻铁电层 。

公开(公告)号：US06867452B2

公开(公告)日：2005-03-15

申请号：US10278581

申请日：2002-10-23

申请人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L27/06 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/02197 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691 ,  H01L27/0629

摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

摘要翻译： 一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。 优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= y <= 1.0且0 <= Y＆LE; 1.0; （BAxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; AND（BAxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

公开(公告)号：US06781184B2

公开(公告)日：2004-08-24

申请号：US09998469

申请日：2001-11-29

申请人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： H01L27108

CPC分类号： H01L28/57 ,  H01L23/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

摘要翻译： 集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。 氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。 氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。 在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。

公开(公告)号：US06541279B2

公开(公告)日：2003-04-01

申请号：US09798310

申请日：2001-03-02

申请人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Vikram Joshi ,  Narayan Solayappan ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC分类号： H01L2100

CPC分类号： H01L21/02197 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691 ,  H01L27/0629

摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is

摘要翻译： 一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜 。 一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。 优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNby-1）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。 根据本发明的薄膜的相对介电常数> 40，优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

公开(公告)号：US06743643B2

公开(公告)日：2004-06-01

申请号：US10348706

申请日：2003-01-22

申请人： Vikram Joshi ,  Narayan Solayappan ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Vikram Joshi ,  Narayan Solayappan ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： H01G706

CPC分类号： H01L27/11502 ,  C30B29/32 ,  C30B29/68 ,  H01L23/642 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.

摘要翻译： 非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。 通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。 沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。 电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。 此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。

公开(公告)号：US07187079B2

公开(公告)日：2007-03-06

申请号：US10666381

申请日：2003-09-19

申请人： Vikram Joshi ,  Narayan Solayappan ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Vikram Joshi ,  Narayan Solayappan ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： H01L23/48

CPC分类号： H01L27/11502 ,  C30B29/32 ,  C30B29/68 ,  H01L23/642 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.

摘要翻译： 非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。 通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。 沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。 电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。 此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。

公开(公告)号：US07064374B2

公开(公告)日：2006-06-20

申请号：US10872895

申请日：2004-06-21

申请人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

发明人： Narayan Solayappan ,  Jolanta Celinska ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

IPC分类号： H01L27/108

CPC分类号： H01L28/57 ,  H01L23/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

公开(公告)号：US06831313B2

公开(公告)日：2004-12-14

申请号：US10332481

申请日：2003-07-22

申请人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Vikram Joshi ,  Narayan Solayappan ,  Jolanta Celinska ,  Larry D. McMillan

发明人： Kiyoshi Uchiyama ,  Carlos A. Paz de Araujo ,  Vikram Joshi ,  Narayan Solayappan ,  Jolanta Celinska ,  Larry D. McMillan

IPC分类号： H01L2972

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/28291 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

摘要： A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.

摘要翻译： 铁电存储器（436）包括多个存储单元（73,82,100），每个存储单元包含具有铁电元件（18）和电介质元件（19）的显微复合材料的铁电薄膜（15），所述电介质 组分是与铁电体组分不同的化合物。 电介质成分优选为磁通量，即具有比铁电体成分高的结晶速度的材料。 添加磁通管允许铁电薄膜在400℃和550℃之间的温度下结晶。

公开(公告)号：US06582972B1

公开(公告)日：2003-06-24

申请号：US09544697

申请日：2000-04-07

申请人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

发明人： Vikram Joshi ,  Jolanta Celinska ,  Narayan Solayappan ,  Larry D. McMillan ,  Carlos A. Paz de Araujo ,  Koji Arita

IPC分类号： H01G2100

CPC分类号： H01L27/11502 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68 ,  H01L21/31691

摘要： A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.

摘要翻译： 将用于形成层状超晶格材料的前体薄膜施加到集成电路基板上，然后在100℃至300℃的低温下向前体薄膜施加强氧化剂，由此 形成金属氧化物薄膜。 强氧化剂可以是液体或气体。 液体强氧化剂的实例是过氧化氢。 气态强氧化剂的实例是臭氧。 金属氧化物薄膜通过在500℃至700℃，优选不超过650℃的范围内的升高温度退火30分钟至2小时的时间段而结晶。 退火在含氧气氛中进行，优选包括水蒸气。 紫外线（UV）辐射处理可能退火之前。 可以在退火之前从500℃到700℃的范围内的RTP。