SUBSTRATE PROCESSING APPARATUS
    1.
    发明公开

    公开(公告)号:US20240071731A1

    公开(公告)日:2024-02-29

    申请号:US18495738

    申请日:2023-10-26

    Abstract: A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having an inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

    PARALLEL-TYPE COATING APPARATUS AND METHOD FOR COATING MULTILAYER FILM

    公开(公告)号:US20230398563A1

    公开(公告)日:2023-12-14

    申请号:US18074263

    申请日:2022-12-02

    CPC classification number: B05B13/0235 B05D3/0493 B05D3/0218 B05D3/007

    Abstract: A parallel-type coating apparatus for coating at least one object to be coated carried by a carrier includes a double-layer vacuum chamber having feed and discharge chambers opposite to each other in a Z-direction, and a plurality of process chambers for performing at least a fixed point coating on the at least one object to be coated. The double-layer vacuum chamber and the process chambers are arranged in two juxtaposed rows in a Y-direction transverse to the Z-direction. A feed lifting mechanism is disposed in one of the double-layer vacuum chamber 3 and the process chambers, and includes a feed lifting seat movable in the Z-direction. A plurality of first conveying devices are respectively disposed in the other ones of the process chambers for conveying the carrier. A method for coating a multilayer film on at least one object to be coated carried by a carrier is also disclosed.

    SUBSTRATE PROCESSING APPARATUS
    5.
    发明申请

    公开(公告)号:US20220285132A1

    公开(公告)日:2022-09-08

    申请号:US17334855

    申请日:2021-05-31

    Abstract: A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.

    DOUBLE-VALVE DEVICE FOR A FILM DEPOSITION APPARATUS
    8.
    发明申请
    DOUBLE-VALVE DEVICE FOR A FILM DEPOSITION APPARATUS 审中-公开
    用于薄膜沉积装置的双阀装置

    公开(公告)号:US20170016110A1

    公开(公告)日:2017-01-19

    申请号:US14798555

    申请日:2015-07-14

    CPC classification number: H01L21/67126

    Abstract: A double-valve device includes a base unit, two valve units and a transport unit. The base unit has a surrounding wall, an entrance wall connected to the surrounding wall and formed with an entrance opening, an exit wall connected to the surrounding wall oppositely of the entrance wall and formed with an exit opening, and a spacing wall disposed between the entrance and exit walls and formed with a pass-through opening. The surrounding wall, the entrance wall and the spacing wall cooperatively define a buffer chamber. The surrounding wall, the spacing wall and the exit wall cooperatively define a joint chamber. The valve units are respectively disposed in the buffer and joint chambers for respectively sealing and unsealing the entrance and pass-through openings.

    Abstract translation: 双阀装置包括基座单元,两个阀单元和运输单元。 基座单元具有围壁,入口壁与周围壁连接并形成有入口,出口壁与入口壁相对的周壁连接并形成有出口, 入口和出口壁,并形成一个通过开口。 周围的壁,入口壁和间隔壁协同地限定了缓冲室。 周围的壁,间隔壁和出口壁协同地限定了联合室。 阀单元分别设置在缓冲器和接头室中,用于分别密封和开封入口和通孔。

    SUBSTRATE PROCESSING APPARATUS
    9.
    发明申请

    公开(公告)号:US20220254660A1

    公开(公告)日:2022-08-11

    申请号:US17168206

    申请日:2021-02-05

    Abstract: A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

Patent Agency Ranking