公开(公告)号：US5106764A

公开(公告)日：1992-04-21

申请号：US444579

申请日：1989-11-30

申请人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin ,  Yuh-Lin Wang

发明人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin ,  Yuh-Lin Wang

IPC分类号： H01L21/302 ,  H01L21/20 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31144 ,  Y10S148/026 ,  Y10S148/111

摘要： Fine featured devices are produced by a series of fabrication steps including exposing selective surface regions to irradiation, e.g. to an ion beam, generally to result in removal of masking material within irradiated regions. In most instances, subsequent etching is under conditions such that bared material is preferentially removed. Etch-removal and irradiation are such that overgrown material is of device quality at least in etched regions. The inventive process is of particular value in the fabrication of integrated circuits, e.g. circuits performing electronic and/or optical functions. The inventive process is expediently used in the fabrication of structures having minimum feature size of 1 micrometer and smaller. Patterning is dependent upon masking material of a maximum thickness of 100 .ANG..

公开(公告)号：US4897361A

公开(公告)日：1990-01-30

申请号：US132757

申请日：1987-12-14

申请人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin

发明人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/263 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3086 ,  H01L21/2633 ,  H01L21/3081 ,  H01L21/3083 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/084 ,  Y10S148/106 ,  Y10S148/149

摘要： When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.

公开(公告)号：US4184171A

公开(公告)日：1980-01-15

申请号：US921983

申请日：1978-07-05

申请人： Morton B. Panish

发明人： Morton B. Panish

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/323 ,  H01S2302/00 ,  Y10S257/912

摘要： A semiconductor double heterostructure (DH) laser or spontaneous emitting diode is described which emits radiation in the infrared region of the spectrum from about 3.5 to 5.5 micrometers. The DH structure comprises a Group III-V lattice-matched system, in particular, Al.sub.y Ga.sub.1-y Sb--InAs.sub.x Sb.sub.1-x where 0.ltoreq.y.gtoreq.1 and 0.82.ltoreq..times..ltoreq.0.91, approximately.

摘要翻译： 描述了半导体双异质结构（DH）激光器或自发发射二极管，其在约3.5至5.5微米的光谱的红外区域中发射辐射。 DH结构包括大约III-V族晶格匹配系统，特别是AlyGa1-ySb-InAsxSb1-x，其中0≤0= 1和0.82≤x= 0.91。

公开(公告)号：US3974002A

公开(公告)日：1976-08-10

申请号：US477975

申请日：1974-06-10

申请人： Horace Craig Casey, Jr. ,  Alfred Yi Cho ,  Morton B. Panish

发明人： Horace Craig Casey, Jr. ,  Alfred Yi Cho ,  Morton B. Panish

IPC分类号： H01L21/203 ,  H01L33/00 ,  H01L7/36

CPC分类号： H01L21/02392 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/0062 ,  Y10S117/906 ,  Y10S148/007 ,  Y10S148/06 ,  Y10S148/065 ,  Y10S148/072

摘要： In the fabrication of double heterostructure GaAsAlGaAs junction lasers by molecular beam epitaxy, it has been found that suitably annealing the entire heterostructure increases the external quantum efficiency of the laser and reduces the room temperature threshold for lasing. Also described is a technique using relatively uncollimated beams to deposit continuously on the interior walls of the vacuum chamber fresh layers which getter deleterious contaminants. In addition, pyrolytic boron nitride, rather than graphite, effusion cells are utilized in order to reduce the amount of CO formation in the system.

摘要翻译： 在通过分子束外延制造双异质结构GaAsAlGaAs结激光器中，已经发现，对整个异质结构进行适当退火增加了激光器的外部量子效率并降低了激光器的室温阈值。 还描述了一种使用相对未经准备的梁连续沉积在真空室新鲜层的内壁上的技术，其消除有害污染物。 此外，为了减少系统中CO形成的量，利用热解氮化硼而不是石墨渗出电池。

公开(公告)号：US4939102A

公开(公告)日：1990-07-03

申请号：US297716

申请日：1989-01-17

申请人： Robert A. Hamm ,  Roger J. Malik ,  Morton B. Panish ,  John F. Walker

发明人： Robert A. Hamm ,  Roger J. Malik ,  Morton B. Panish ,  John F. Walker

IPC分类号： H01L21/205 ,  H01L21/203

CPC分类号： H01L21/02392 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/02631 ,  Y10S148/002 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/169 ,  Y10S438/915

摘要： 36 We have discovered the III-V semiconductor layers with previously unattainably high effective hole concentrations can be produced by molecular growth processes (e.g. MBE) if an amphoteric dopant such as Be is used and if, during the growth of the highly doped III-V layer, the substrate is maintained at a temperature T.sub.g that is substantially lower than customarily used. For instance, a InGaAs layer with effective hole concentration 1.0.times.10.sup.20 cm.sup.-3 was grown at T.sub.g =450.degree. C., and a GaAs layer with effective hole concentration of 1.0.times.10.sup.20 cm.sup.-3 was grown at T.sub.g of 475.degree. C. The heavily doped III-V layers can be of device grade and can usefully be part of electronic devices such as high speed bipolar transistors.

公开(公告)号：US4330360A

公开(公告)日：1982-05-18

申请号：US170548

申请日：1980-07-21

申请人： Glenn D. Kubiak ,  Morton B. Panish

发明人： Glenn D. Kubiak ,  Morton B. Panish

IPC分类号： C30B23/02 ,  C30B23/06 ,  C30B25/02 ,  H01L21/203

CPC分类号： C30B23/02 ,  C30B23/066 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  Y10S148/065 ,  Y10S148/169

摘要： The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M.sub.2 or M.sub.4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As.sub.2 and P.sub.2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.

摘要翻译： 本发明是通过分子束沉积生长III-V族半导体层的方法和装置，其中使用气态源形成包含M2或M4分子的分子束，其中M是V族元素。 胂和膦可以在高温泄漏源中分解，以提供As2和P2分子束用于III-V族半导体如GaAs和InP的分子束外延。

公开(公告)号：US3958263A

公开(公告)日：1976-05-18

申请号：US463871

申请日：1974-04-25

申请人： Morton B. Panish ,  George Arthur Rozgonyi

发明人： Morton B. Panish ,  George Arthur Rozgonyi

IPC分类号： H01L21/208 ,  H01L33/00 ,  H01S5/00 ,  H01S5/20 ,  H01S3/18 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01S5/20 ,  H01L33/0025 ,  H01S5/2059 ,  Y10S148/065 ,  Y10S148/066 ,  Y10S148/067 ,  Y10S148/097 ,  Y10S148/107 ,  Y10S438/938

摘要： The average stress between contiguous layers of Al.sub.x Ga.sub.1.sub.-x As and Al.sub.y Ga.sub.1.sub.-y As (y > x) is reduced by the addition of phosphorus during the growth of the latter layer to produce the quaternary Al.sub.y Ga.sub.1.sub.-y As.sub.1.sub.-z P.sub.z instead of the ternary Al.sub.y Ga.sub.1.sub.-y As. In order to reduce the average stress to less than about 2 .times. 10.sup.8 dynes/cm.sup.2 the amount of phosphorus added should satisfy the condition: ##EQU1## Also described is a double heterostructure junction laser comprising a GaAs or AlGaAs active layer sandwiched between layers of AlGaAsP.