摘要:
An electrostatic chuck capable of widening a temperature range and reducing a variation in thermal conductivity between the electrostatic chuck and the flat substrate over time is provided. The chuck includes: a body that has an internal electrode for attracting a flat substrate by an electrostatic force provided therein, a plurality of protrusions formed on one surface of the body serving as an electrostatic attraction surface, and projections provided on the top surfaces of some or all of the plurality of protrusions. In the electrostatic chuck, a region of the top surface of each of the minute projections on which the flat substrate is loaded is referred to as a mounting surface, and the total area of the mounting surfaces of the minute projections is equal to or larger than 0.01% and equal to or smaller than 2% of the area of the electrostatic attraction surface.
摘要:
A bonding method is provided in which an electronic component is connected via bumps to a substrate and the electronic component is packaged on the substrate. A surface of the substrate that packages the electronic component, a surface of the electronic component that is connected to the substrate, and a surface of the bumps undergo plasma processing. Subsequently, the bumps are heated to a temperature lower than a melting point of the bumps, and the substrate and the electronic component are compression bonded via the bumps.
摘要:
There is provided a susceptor with a built-in electrode and a manufacturing method therefor, in which there is no danger of corrosive gas or plasma or the like penetrating to the inside of the substrate, which has excellent corrosion resistance and plasma resistance, in which nonconductivity under high temperatures is improved, and in which leakage current does not occur. A susceptor with a built-in electrode 21 according to the present invention comprises: a mounting plate 22 and a support plate 23 which are formed from aluminum nitride based sintered bodies; an internal electrode 24 formed from either an aluminum nitride and tungsten composite sintered body or an aluminum nitride and molybdenum composite sintered body, which is formed between the mounting plate 22 and the support plate 23; and power supply terminals 26 which are provided in the support plate 23 and are electrically connected to the internal electrode 24, and both surfaces of the internal electrode 24 are coated with a nonconductive material 30 comprising AlN particles.
摘要:
Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.
摘要:
There are provided a plate-shaped body for temperature measurement which, simply by being mounted on a mounting surface of an electrostatic chuck apparatus and without using a semiconductor wafer itself which is a product, is able to easily optimize the in-plane temperature distribution of the mounting surface of the electrostatic chuck apparatus, the temperature rising characteristics, and the cooling characteristics during decreases in temperature, and a temperature measuring apparatus provided with the same. In such a wafer for temperature measurement (plate-shaped body for temperature measurement) (1), an insulating adhesive (3) is bonded to the entirety of a surface (2a) of a wafer (2), a heater element (4) is provided on the insulating adhesive (3), a temperature measurement region (5) is provided used to measure the temperature of the surface (2a) of the wafer (2) in a region excluding the heater element (4) on the surface (3a) of the insulating adhesive (3), and the heater element (4) and the temperature measurement region (5) are coated with an insulating film (6).
摘要:
The present invention provides an electrostatic chuck apparatus including: an electrostatic chuck section having one main surface that is a mounting surface on which a plate specimen is mounted, and being equipped with an electrostatic adsorbing internal electrode; and a temperature adjusting base section that adjusts the electrostatic chuck section to a desired temperature, wherein a heating member is bonded to a main surface of the electrostatic chuck section, which is opposite to the mounting surface, via an adhesive material, the whole or a part of the main surface of the temperature adjusting base section, which is on the side of the electrostatic chuck section, is covered with a sheet-like or film-like insulating material, and the electrostatic chuck section bonded with the heating member and the temperature adjusting base section covered with the sheet-like or the film-like insulating material are bonded and integrated via an insulating organic adhesive layer formed by curing a liquid adhesive.
摘要:
An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) including an electrostatic chuck section (22), a metal base section (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck section (22) is composed of a dielectric plate (31) whose top surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an electrostatic-adsorption inner electrode (25), and an insulating layer (33). The electrostatic-adsorption inner electrode (25) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10−1 Ωcm but not more than 1.0×108 Ωcm.
摘要:
An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the volume resistivity of the electrostatic-adsorption inner electrode is in the range of 1.0×10−1Ωcm to 1.0×108 Ωcm.
摘要:
The plastic film electrostatic adsorption apparatus of the present invention comprises an electrostatic adsorption electrode, an insulated dielectric layer that covers the electrostatic adsorption electrode and has a center line average roughness of an adsorption surface on which a plastic film is placed of 0.5 micrometers or less, and a power supply electrode that applies a voltage to the electrostatic adsorption electrode. According to this plastic film electrostatic adsorption apparatus, surface treatment can be performed even in a vacuum without requiring tedious work such as application or removal of adhesive. In addition, even if the plastic film expands and deforms due to heat treatment and plasma treatment performed during surface treatment, there is no occurrence of wrinkling, deformation or separation in the plastic film due to the difference in thermal expansion between the electrostatic adsorption surface and plastic film.