公开(公告)号：US06546034B2

公开(公告)日：2003-04-08

申请号：US09748175

申请日：2000-12-27

申请人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

发明人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2224

摘要： A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.

摘要翻译： 半导体激光器件包括半导体衬底，半导体衬底的一侧上的第一包层区域，有源层区域和设置在半导体衬底的相对侧上的第二覆盖区域。 有源层区域设置在半导体衬底和第二覆盖区域之间。 第一半导体区域与有源层区域中的光的行进方向平行地设置在有源层区域的两侧，并且具有比有源层区域高的电阻，并且具有比半导体的折射率高的折射率 基质。 在第一半导体区域和第二包层区域的一部分之间形成绝缘或半绝缘的第二半导体区域。 提供第一电极和第二电极用于将电流注入到有源层区域中。

公开(公告)号：US06606443B2

公开(公告)日：2003-08-12

申请号：US10231260

申请日：2002-08-30

申请人： Hiroshi Sato ,  Masahiro Aoki ,  Tsurugi Sudoh ,  Akira Taike ,  Tomonobu Tsuchiya ,  Masaaki Komori ,  Kazuhisa Uomi

发明人： Hiroshi Sato ,  Masahiro Aoki ,  Tsurugi Sudoh ,  Akira Taike ,  Tomonobu Tsuchiya ,  Masaaki Komori ,  Kazuhisa Uomi

IPC分类号： G02B610

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/106 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34306

摘要： An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.

公开(公告)号：US06459840B1

公开(公告)日：2002-10-01

申请号：US09259332

申请日：1999-03-01

申请人： Hiroshi Sato ,  Masahiro Aoki ,  Tsurugi Sudoh ,  Akira Taike ,  Tomonobu Tsuchiya ,  Masaaki Komori ,  Kazuhisa Uomi

发明人： Hiroshi Sato ,  Masahiro Aoki ,  Tsurugi Sudoh ,  Akira Taike ,  Tomonobu Tsuchiya ,  Masaaki Komori ,  Kazuhisa Uomi

IPC分类号： G02B610

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/106 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34306

摘要： An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.

摘要翻译： 特别适用于具有大的光输出和优异的反射电阻的高速和大容量光传输系统的光传输装置包括用于出射光的波导型光学元件和光传输路径，光传输路径将被光耦合到 波导型光学元件。 波导型光学元件至少部分地包括具有增益耦合衍射光栅的发光部分和与发光部分集成的模式转换区域。

公开(公告)号：US06678479B1

公开(公告)日：2004-01-13

申请号：US09516912

申请日：2000-03-01

申请人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

发明人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

IPC分类号： H04B1006

CPC分类号： H01S5/0265 ,  H01S5/2077 ,  H01S5/2272 ,  H04B10/5051

摘要： For achieving a transmission light source having different transmission properties or characteristics, i.e., the a parameters, depending upon application thereof, in a light emission element of semiconductor EA modulator integrated type being constructed with a light emission portion for lasing with a single vertical mode and a plurality of EA modulators, wherein an absorption edge wavelength under the condition of applying no bias thereto, in the semiconductor multiple-quantum-well structure owned by the modulator which is near to an emission side of the light emission portion, is to be equal or longer than the absorption edge wavelength owned by the modulator positioned far from the emission side of the light emission portion.

摘要翻译： 为了实现具有不同透射特性或特性的传输光源，即根据其应用的参数，在半导体EA调制器集成型的发光元件中构造有用于以单个垂直模式激光的发光部分，以及 在靠近发光部的发射侧的调制器所拥有的半导体多量子阱结构中，在不施加偏压的条件下的吸收边缘波长的多个EA调制器将相等 或比由位于远离发光部分的发射侧的调制器所拥有的吸收边缘波长更长。

公开(公告)号：US5666455A

公开(公告)日：1997-09-09

申请号：US713867

申请日：1996-09-13

申请人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

发明人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

IPC分类号： G02B6/10 ,  G02B6/12 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/40

CPC分类号： H01S5/22 ,  G02B6/10 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01S5/12 ,  H01S5/209 ,  H01S5/4025

摘要： A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.

摘要翻译： 波导器件包括铟磷化物衬底，形成在磷化铟衬底上的有源层和形成在有源层上的覆层，所述覆层具有其侧壁被构造成反向台面形式的脊结构。

公开(公告)号：US5179567A

公开(公告)日：1993-01-12

申请号：US652676

申请日：1991-02-08

申请人： Kazuhisa Uomi ,  Naoki Chinone ,  Masahiro Aoki

发明人： Kazuhisa Uomi ,  Naoki Chinone ,  Masahiro Aoki

IPC分类号： H04B10/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/062 ,  H01S5/227 ,  H04B10/50

CPC分类号： H01S5/02 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/227 ,  H01S5/2275

摘要： A semiconductor laser device may include a structure formed separately of a light radiating region, and an electrode for injecting carriers over the light radiating region. A gap is formed between the light radiating region and the structure to introduce an air-bridge structure into the aforementioned electrode so that the capacitive component resulting from a presence of the electrode is drastically reduced.

摘要翻译： 半导体激光器件可以包括与光辐射区域分开形成的结构，以及用于在光辐射区域上注入载流子的电极。 在光辐射区域和结构之间形成间隙，以将气桥结构引入到上述电极中，使得由于电极的存在而导致的电容分量急剧减少。

公开(公告)号：US06236771B1

公开(公告)日：2001-05-22

申请号：US09251662

申请日：1999-02-17

申请人： Masahiro Aoki ,  Kazuhisa Uomi ,  Satoshi Aoki

发明人： Masahiro Aoki ,  Kazuhisa Uomi ,  Satoshi Aoki

IPC分类号： G02F1035

CPC分类号： H01S5/02276 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01S5/02216 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/0265 ,  H01L2924/00014

摘要： An optical transmission apparatus, where the variation of optical wavelength due to temperature change is slight, and at the same time, the stray capacitance of an external modulator is reduced, and an optical integrated structure having a light source and the external modulator is mounted in a mechanically stable manner. The external modulator modulates output light from a semiconductor laser. The semiconductor laser is a front-end emission semiconductor laser that emits unmodulated light. The semiconductor laser and the modulator are monolithically integrated as an integrated structure. Control electrodes of the semiconductor laser and the modulator formed on a waveguide of the integrated structure are junction-down mounted via solder material to a laser-driving electrode and optical-modulator driving electrode separately formed on an optical mounting substrate.

摘要翻译： 由于温度变化导致的光波长的变化小的光传输装置，同时外部调制器的寄生电容减少，具有光源和外部调制器的光学集成结构安装在 机械稳定的方式。 外部调制器调制半导体激光器的输出光。 半导体激光器是发射未调制光的前端发射半导体激光器。 半导体激光器和调制器作为集成结构单片集成。 形成在集成结构的波导上的半导体激光器和调制器的控制电极通过焊料材料结合到安装在光学安装基板上的激光驱动电极和光学调制器驱动电极。

公开(公告)号：US5654583A

公开(公告)日：1997-08-05

申请号：US494228

申请日：1995-06-23

申请人： Yae Okuno ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Misuzu Sagawa

发明人： Yae Okuno ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Misuzu Sagawa

IPC分类号： H01S5/02 ,  H01L29/22 ,  H01L29/04 ,  H01L29/20

CPC分类号： H01S5/0215 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/0265 ,  H01S5/101 ,  H01S5/1243 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3202 ,  H01S5/34306

摘要： The semiconductor device has a semiconductor structure directly bonded onto another semiconductor structure of a different kind from the former. These two semiconductor structures are arranged in such a way that their crystal structures in a cross section perpendicular to the bonded interface of the two semiconductor structures are different from each other or that their lattice orders are not equivalent. This can be applied to direct bonding of any combination of semiconductor structures in any crystallographic orientation relation. This also allows bonding of three or more kinds of semiconductor structures.

摘要翻译： 半导体器件具有直接结合到与前者不同种类的另一半导体结构上的半导体结构。 这两个半导体结构被布置成使得它们在垂直于两个半导体结构的键合界面的截面中的晶体结构彼此不同或它们的晶格次数不相等。 这可以应用于任何结晶取向关系中的任何半导体结构组合的直接结合。 这也允许三种或更多种半导体结构的结合。

公开(公告)号：US5574289A

公开(公告)日：1996-11-12

申请号：US24084

申请日：1993-03-01

申请人： Masahiro Aoki ,  Hirohisa Sano ,  Shinji Sakano ,  Makoto Suzuki ,  Makoto Takahashi ,  Kazuhisa Uomi ,  Tatemi Ido ,  Atsushi Takai

发明人： Masahiro Aoki ,  Hirohisa Sano ,  Shinji Sakano ,  Makoto Suzuki ,  Makoto Takahashi ,  Kazuhisa Uomi ,  Tatemi Ido ,  Atsushi Takai

IPC分类号： G02F1/017 ,  H01L31/0352 ,  H01L33/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S5/50 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01L31/035236 ,  H01L33/0062 ,  H01S5/0265 ,  H01S5/227 ,  H01S5/34 ,  G02F2203/07 ,  H01S5/026 ,  H01S5/10 ,  H01S5/106 ,  H01S5/12 ,  H01S5/2272 ,  H01S5/3404 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/4068 ,  H01S5/5036

摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.

摘要翻译： 公开了一种制造该器件的半导体光学集成器件和方法，该器件具有多个量子阱结构，形成在单个衬底上，作为光波导，多个量子阱结构分别与衬底具有不同的晶格错配; /或不同的应变（例如，分别为压缩应变和拉伸应变）。 该方法包括通过例如在衬底的生长区域上的有机金属气相外延选择性地沉积量子阱结构，生长区域由绝缘层图案化掩模限定，具有生长区域的宽度和/或图案化宽度 掩模对于不同的量子阱结构是不同的。 每个量子阱结构包括III-V或II-VI族化合物半导体材料的量子阱层，III族或II族元素各自包含至少两种元素，一种具有较大的原子直径，另一种具有较小的原子直径。 还公开了可以独立地吸收串联的TE模式和TM模式光的光接收器，其可以用于用于相干光通信的偏振波分集接收器中。

公开(公告)号：US5572616A

公开(公告)日：1996-11-05

申请号：US380571

申请日：1995-01-30

申请人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

发明人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

IPC分类号： G02B6/10 ,  G02B6/12 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/40

CPC分类号： H01S5/22 ,  G02B6/10 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01S5/12 ,  H01S5/209 ,  H01S5/4025

摘要： A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.

摘要翻译： 波导器件包括铟磷化物衬底，形成在磷化铟衬底上的有源层和形成在有源层上的覆层，所述覆层具有其侧壁被构造成反向台面形式的脊结构。