摘要:
A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
摘要:
An autofocus device for an imaging device is provided, which has an imaging optic having a first focal plane and an object table for moving an object to be imaged relative to the first focal plane, wherein said autofocus device comprises a) an image recording module having a second focal plane, the location thereof relative to the first focal plane being known, b) a lighting module (BM) for imaging a focusing image along a lighting beam path in a focusing image plane such that, if the object is positioned in a target position at a predetermined distance to the second focal plane, the lighting beam path is folded because of reflection on the object and the focusing image, which lies in the focusing image plane, intersects the second focal plane or lies therein, and c) a control module, which activates the object table to focus the imaging device so that the object is positioned in the target position, from a signal of the image recording module, which the image recording module generates on the basis of the recording thereof of the focusing image when the object is positioned in the target position, derives the deviation of the object position from the target position, and, based on the derived deviation, the predetermined distance, and the relative location of the first and second focal planes, activates the object table so that the object is positioned in the first focal plane.
摘要:
An apparatus for measuring the positions of marks on a mask is provided, said apparatus comprising a mask holder for holding the mask, a recording unit for recording the marks of the mask held by the mask holder, an actuating module for moving the mask holder and the recording unit relative to each other, and an evaluating module, which numerically calculates the gravity-induced sagging of the mask in the mask holder and determines the positions of the marks on the mask, based on the calculated sagging, the recordings made by the recording unit and the relative movement between the mask holder and the recording unit, wherein, prior to calculating said sagging, the present position of the mask in the mask holder is determined and is taken into consideration in said numerical calculation, and/or the geometrical dimensions of the mask are taken into consideration in said numerical calculation of sagging.
摘要:
An illumination mask (10a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures (11a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone (20a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium. Applications include, for example, the range-resolved determination of scattered light of projection objectives in microlithography projection-exposure systems.
摘要:
A method is provided for determining the relative overlay shift of stacked layers, said method comprising the steps of: a) providing a reference image including a reference pattern that comprises first and second pattern elements; b) providing a measurement image of a measurement pattern, which comprises a first pattern element formed by a first one of the layers and a second pattern element formed by a second one of the layers; c) weighting the reference or measurement image such that a weighted first image is generated, in which the first pattern element is emphasized relative to the second pattern element; d) determining the relative shift of the first pattern element on the basis of the weighted first image and of the measurement or reference image not weighted in step c); e) weighting the reference or measurement image such that a weighted second image is generated, in which the second pattern element is emphasized relative to the first pattern element; f) determining the relative shift of the second pattern element on the basis of the weighted second image and of the measurement or reference image not weighted in step e); g) determining the relative overlay shift on the basis of the relative shifts determined in steps d) and f).
摘要:
A method of measuring scattered light on an optical system includes: providing a first measuring field and a second measuring field, both measuring fields respectively being either of a first light manipulation type or a second light manipulation type, which first light manipulation type is configured to cause incoming light to enter the optical system and which second light manipulation type is configured to prevent incoming light from entering the optical system, and both measuring fields respectively having a second light manipulation type reference structure and a respective measuring structure, which measuring structures are of the second light manipulation type in the case where the measuring fields are of the first light manipulation type, and are first light manipulation type regions of the measuring fields in the case where the measuring fields are of the second light manipulation type, wherein the measuring structures of the respective measuring fields are offset in different directions in relation to the respective reference structure, imaging the first measuring field with the optical system into an image plane and measuring a first light intensity produced herewith at a location in the region of the image of the reference structure of the first measuring field, and imaging the second measuring field with the optical system into the image plane and measuring a second light intensity produced herewith at a location in the region of the image of the reference structure of the second measuring field.
摘要:
A scattered light measurement device includes an illumination mask providing measuring radiation on an entrance side (1a) of a test component (1) and a detection part (3-6) for detection of light scattered by the test component and disposed on an exit side (1b) of the test component. The illumination mask includes at least one scattered light measurement structure, wherein the scattered light measurement structure has a scattered light marker zone and wherein the scattered light marker zone has a rotationally non-symmetric shape.
摘要:
In a moiré method for measuring the distortion of an optical imaging system in which and object grid having a two-dimensional object pattern is arranged in an object plane of the imaging system and an image grid having a two-dimensional image pattern is arranged in an image plane of the imaging system, these patterns are configured in the form of, for example cross-hatched patterns or checker board patterns, are adapted to suit one another such that a two-dimensional moiré fringe pattern that may be detected by a two-dimensional, spatially resolving, detection device is created when the object grid is imaged onto the image grid using the imaging system. Distortion components of the imaging system may be simultaneously determined along two differently oriented, in particular, two mutually orthogonal, image directions from a two-dimensional moiré fringe pattern.
摘要:
A method and an apparatus for determining the position of a structure on a mask for microlithography, in which the position is determined by comparing an aerial image, measured by a recording device, of a portion of the mask with an aerial image determined by simulation. The position determination includes carrying out a plurality of such comparisons which differ from one another with regard to the input parameters of the simulation.
摘要:
The position of an edge of a marker structure in an image of the marker structure is determined with subpixel accuracy. A discrete intensity profile of the edge, having profile pixels, is derived from the image pixels, and a continuous profile function of the edge is determined based on the profile pixels. Profile pixels whose intensity values are near an intensity threshold value are selected as evaluation pixels. Based on the evaluation pixels, a curve of continuous intensity is calculated. A position coordinate at which the intensity value of the continuous intensity curve matches the threshold value is selected as a first position coordinate, and the distance is determined between the first position coordinate and the position coordinate of the evaluation pixel that, from among the evaluation pixels previously selected, has the closest intensity value to the threshold value. The determined distance is compared to a predetermined threshold, and if the distance is greater than the threshold, a shift is effected, and the process iteratively performs the steps of selects the adjacent profile pixels, calculates the curve of continuous intensity, and so forth. If the distance is not greater than the threshold, the position of the edge in the captured image is determined with subpixel accuracy from all the distances determined in step g).