DEVICE AND METHOD FOR RANGE-RESOLVED DETERMINATION OF SCATTERED LIGHT, AND AN ILLUMINATION MASK
    1.
    发明申请
    DEVICE AND METHOD FOR RANGE-RESOLVED DETERMINATION OF SCATTERED LIGHT, AND AN ILLUMINATION MASK 有权
    用于范围确定散射光的方法和方法,以及照明面具

    公开(公告)号:US20080285018A1

    公开(公告)日:2008-11-20

    申请号:US12181774

    申请日:2008-07-29

    IPC分类号: G01J1/00

    CPC分类号: G03F7/70591 G03F7/70941

    摘要: An illumination mask (10a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures (11a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone (20a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium. Applications include, for example, the range-resolved determination of scattered light of projection objectives in microlithography projection-exposure systems.

    摘要翻译: 一种用于用于范围分辨确定散射光的装置的照明掩模(10a),具有一个或多个散射光测量结构(11a),其分别包括限定最小散射范围的内部暗场区域, 提供相关联的图像场掩模和相应的设备。 还提供了具有这种装置的相关联的操作方法和微光刻投影曝光系统。 照明面罩中散焦点测量结构具有明亮区域形式的散射光标记区域(20a),其一方面与内暗区区域相接触,另一方面边界处 外部暗场区域,其定义了最大散射范围。 该设备可以可选地被设计用于通过使用合适的图像场掩模并且还用于多通道波前测量的散射光的多通道测量,并且检测部分可以包含浸没介质。 应用包括例如在微光刻投影曝光系统中投射物镜的散射光的范围分辨确定。

    Device for the range-resolved determination of scattered light, operating method, illumination mask and image-field mask
    2.
    发明授权
    Device for the range-resolved determination of scattered light, operating method, illumination mask and image-field mask 有权
    用于范围分辨的散射光确定装置,操作方法,照明掩模和图像场掩模

    公开(公告)号:US07408631B2

    公开(公告)日:2008-08-05

    申请号:US10960082

    申请日:2004-10-08

    IPC分类号: G01B9/00 G01J1/00 G03B27/42

    CPC分类号: G03F7/70591 G03F7/70941

    摘要: An illumination mask (10a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures (11a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone (20a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium. Applications include, for example, the range-resolved determination of scattered light of projection objectives in microlithography projection-exposure systems.

    摘要翻译: 一种用于用于范围分辨确定散射光的装置的照明掩模(10a),具有一个或多个散射光测量结构(11a),其分别包括限定最小散射范围的内部暗场区域, 提供相关联的图像场掩模和相应的设备。 还提供了具有这种装置的相关联的操作方法和微光刻投影曝光系统。 照明面罩中散焦点测量结构具有明亮区域形式的散射光标记区域(20a),其一方面与内暗区区域相接触,另一方面边界处 外部暗场区域,其定义了最大散射范围。 该设备可以可选地被设计用于通过使用合适的图像场掩模并且还用于多通道波前测量的散射光的多通道测量,并且检测部分可以包含浸没介质。 应用包括例如在微光刻投影曝光系统中投射物镜的散射光的范围分辨确定。

    Device and method for range-resolved determination of scattered light, and an illumination mask
    3.
    发明授权
    Device and method for range-resolved determination of scattered light, and an illumination mask 有权
    用于范围分辨确定散射光的装置和方法以及照明掩模

    公开(公告)号:US07755748B2

    公开(公告)日:2010-07-13

    申请号:US12181774

    申请日:2008-07-29

    IPC分类号: G01B9/00

    CPC分类号: G03F7/70591 G03F7/70941

    摘要: A scattered light measurement device includes an illumination mask providing measuring radiation on an entrance side (1a) of a test component (1) and a detection part (3-6) for detection of light scattered by the test component and disposed on an exit side (1b) of the test component. The illumination mask includes at least one scattered light measurement structure, wherein the scattered light measurement structure has a scattered light marker zone and wherein the scattered light marker zone has a rotationally non-symmetric shape.

    摘要翻译: 散射光测量装置包括照射掩模,其在测试部件(1)的入口侧(1a)和检测部(3-6)上提供测量辐射,用于检测由测试部件散射的光并且设置在出射侧 (1b)。 照明掩模包括至少一个散射光测量结构,其中散射光测量结构具有散射光标记区,并且其中散射光标记区具有旋转非对称形状。

    Device for the range-resolved determination of scattered light, operating method, illumination mask and image-field mask
    4.
    发明申请
    Device for the range-resolved determination of scattered light, operating method, illumination mask and image-field mask 有权
    用于范围分辨的散射光确定装置,操作方法,照明掩模和图像场掩模

    公开(公告)号:US20050264819A1

    公开(公告)日:2005-12-01

    申请号:US10960082

    申请日:2004-10-08

    IPC分类号: G03F7/20 G01N21/47

    CPC分类号: G03F7/70591 G03F7/70941

    摘要: An illumination mask (10a) for a device for the range-resolved determination of scattered light, having one or more scattered-light measuring structures (11a) which respectively include an inner dark-field zone which defines a minimum scattering range, to an associated image-field mask and a corresponding device is provided. Also provided is an associated operating method and a microlithography projection-exposure system having such a device. The scattered-lighter measuring structure in the illumination mask has a scattered-light marker zone (20a) in the form of a bright-field zone, which on the one hand borders the inner dark-field zone and on the other hand borders an outer dark-field zone, which defines a maximum scattering range. The device may optionally be designed for the multi-channel measuring of scattered light by using a suitable image-field mask and also for multi-channel wavefront measurement, and the detection part may contain an immersion medium. Applications include, for example, the range-resolved determination of scattered light of projection objectives in microlithography projection-exposure systems.

    摘要翻译: 一种用于用于范围分辨确定散射光的装置的照明掩模(10a),具有一个或多个散射光测量结构(11a),其分别包括限定最小散射范围的内部暗场区域, 提供相关联的图像场掩模和相应的设备。 还提供了具有这种装置的相关联的操作方法和微光刻投影曝光系统。 照明面罩中散焦点测量结构具有明亮区域形式的散射光标记区域(20a),其一方面与内暗区区域相接触,另一方面边界处 外部暗场区域,其定义了最大散射范围。 该设备可以可选地被设计用于通过使用合适的图像场掩模并且还用于多通道波前测量的散射光的多通道测量,并且检测部分可以包含浸没介质。 应用包括例如在微光刻投影曝光系统中投射物镜的散射光的范围分辨确定。

    PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY WITH A MEASUREMENT DEVICE
    6.
    发明申请
    PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY WITH A MEASUREMENT DEVICE 有权
    用于具有测量装置的微观计算的投影曝光系统

    公开(公告)号:US20110013171A1

    公开(公告)日:2011-01-20

    申请号:US12838393

    申请日:2010-07-16

    IPC分类号: G03B27/58

    摘要: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26. An evaluation device (54) is configured to establish a lateral position of the image of the measurement structure (48) in the area of the detector (52) during the exposure process.

    摘要翻译: 一种用于微光刻的投影曝光系统(10),包括:保持掩模(18)的掩模保持装置(14),掩模结构(20)设置在掩模上;保持基板(30)的基板保持装置(36) 投影光学器件(26)在曝光过程期间将掩模结构(20)成像到衬底(30)上;以及测量结构(48),其相对于投影曝光系统的参考元件(16)设置在限定位置 10),所述限定位置与所述掩模保持装置(14)的位置机械地脱离。 投影曝光系统(10)还包括检测器(52),其被布置成记录由投影光学器件(26)成像的测量结构(48)的图像。 投影曝光系统(10)被配置为使得在投影曝光系统(10)的操作期间,掩模结构(20)的成像和测量结构(48)的成像同时由投影光学器件 (26)评估装置(54)被配置为在曝光处理期间在检测器(52)的区域中建立测量结构(48)的图像的横向位置。

    Projection exposure system for microlithography with a measurement device
    8.
    发明授权
    Projection exposure system for microlithography with a measurement device 有权
    具有测量装置的微光刻投影曝光系统

    公开(公告)号:US09001304B2

    公开(公告)日:2015-04-07

    申请号:US12838393

    申请日:2010-07-16

    IPC分类号: G03B27/42 G03F7/20

    摘要: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26. An evaluation device (54) is configured to establish a lateral position of the image of the measurement structure (48) in the area of the detector (52) during the exposure process.

    摘要翻译: 一种用于微光刻的投影曝光系统(10),包括:保持掩模(18)的掩模保持装置(14),掩模结构(20)设置在掩模上;保持基板(30)的基板保持装置(36) 投影光学器件(26)在曝光过程期间将掩模结构(20)成像到衬底(30)上;以及测量结构(48),其相对于投影曝光系统的参考元件(16)设置在限定位置 10),所述限定位置与所述掩模保持装置(14)的位置机械地脱离。 投影曝光系统(10)还包括检测器(52),其被布置成记录由投影光学器件(26)成像的测量结构(48)的图像。 投影曝光系统(10)被配置为使得在投影曝光系统(10)的操作期间,掩模结构(20)的成像和测量结构(48)的成像同时由投影光学器件 (26)评估装置(54)被配置为在曝光处理期间在检测器(52)的区域中建立测量结构(48)的图像的横向位置。