摘要:
A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
摘要:
A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
摘要:
Apparatus for inspecting objects especially masks in microlithography that are disposed in a vacuum chamber. The apparatus includes a converter for converting illuminating radiation emitted from the object into a radiation of a higher wavelength. A sensor for recording images is disposed outside the vacuum chamber and arranged as an optical interface from the vacuum chamber to the sensor of the converter or at least one part of an image lens is arranged as a window in the vacuum chamber.
摘要:
An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.
摘要:
Apparatus for inspecting objects especially masks in microlithography that are disposed in a vacuum chamber. The apparatus includes a converter for converting illuminating radiation emitted from the object into a radiation of a higher wavelength. A sensor for recording images is disposed outside the vacuum chamber and arranged as an optical interface from the vacuum chamber to the sensor of the converter or at least one part of an image lens is arranged as a window in the vacuum chamber.
摘要:
An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.
摘要:
A polarizer device, for converting an entry light beam into an exit light beam with a defined spatial distribution of polarization states, has an angle varying input device for receiving the entry light beam and for generating a first light beam with a predeterminable first angular distribution of light rays; an angle-selectively active polarization influencing device for receiving the first light beam and for converting the first light beam into a second light beam according to a defined angle function of the polarization state variation; and an angle varying output device for receiving the second light beam and for generating the exit light beam with a second angular distribution from the second light beam. In particular, polarization states with a radial or tangential polarization can be provided cost-effectively in this way.
摘要:
The present invention is directed to an optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing. With the proposed solution, it is possible in particular to examine lithography masks for defects by means of inspection microscopes in spite of increasingly smaller structures and increasingly higher image-side numerical apertures of the imaging systems. Realistic images of the scanner systems can be generated by emulating the occurring vector effects.
摘要:
The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.
摘要:
A microscope with incident light input coupling, wherein the light provided for the incident illumination is directed onto the partially reflecting layer of a beam splitter cube and is directed from there through the objective onto the specimen, while the light reflected and/or emitted by the specimen travels back to the partially reflecting layer and passes through the latter into the imaging beam path. In a microscope of this type, the beam splitter cube is provided with a negative spherical curvature at its outer surface facing the objective. Further, instead of the conventional tube lens, there is a combination formed of a converging lens and a diverging lens, wherein the surface curvatures of the converging lens and the diverging lens and the negative spherical curvature effected at the beam splitter cube are adapted to one another in such a way that the back-reflections of the incident illumination in the intermediate image plane are limited to a minimum.