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公开(公告)号：US20110061684A1
公开(公告)日：2011-03-17
申请号：US12878382
申请日：2010-09-09
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , H01L21/02052
摘要： A cleaning method for a semiconductor wafer with cleaning liquid comprising: cleaning the semiconductor wafer while the temperature of the surface of the semiconductor wafer is from 30 degrees to 50 degrees, the cleaning liquid has lower surface tension and viscosity than water.
摘要翻译： 一种具有清洗液的半导体晶片的清洗方法，包括：在半导体晶片的表面的温度为30度至50度的范围内清洗半导体晶片，该清洗液具有比水低的表面张力和粘度。
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公开(公告)号：US20090250431A1
公开(公告)日：2009-10-08
申请号：US12404681
申请日：2009-03-16
申请人： Minako INUKAI , Yoshihiro OGAWA , Hiroshi TOMITA , Hiroyasu IIMORI , Yuji YAMADA , Yoshihiro UOZUMI , Linan JI , Kaori UMEZAWA , Hisadhi OKUCHI
发明人： Minako INUKAI , Yoshihiro OGAWA , Hiroshi TOMITA , Hiroyasu IIMORI , Yuji YAMADA , Yoshihiro UOZUMI , Linan JI , Kaori UMEZAWA , Hisadhi OKUCHI
CPC分类号： H01L21/02082 , H01L21/02057
摘要： A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid.
摘要翻译： 在其上形成有彼此相邻的多个图案的基板的处理的基板处理方法具有：将第一处理液体供给到干燥后的基板的主面，并且形成有图案的第一处理液 粘附在基材的主表面上; 以及在所述第一处理液体粘附到所述基板的主表面的状态下，将具有比所述第一处理液体更高的表面张力的第二处理液供给到所述基板的主表面，以处理所述基板的所述主表面， 处理液体。
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公开(公告)号：US20110230054A1
公开(公告)日：2011-09-22
申请号：US12841217
申请日：2010-07-22
IPC分类号： H01L21/3205 , B08B3/08 , B08B3/12
CPC分类号： H01L21/02052 , H01L21/02057
摘要： In one embodiment, a semiconductor substrate cleaning method is disclosed. The method can clean a semiconductor substrate by using a chemical of 80° C. or above. The method can rinse the semiconductor substrate by using pure water of 40° C. or above after the cleaning of the semiconductor substrate. The method can then rinse the semiconductor substrate by using pure water of 30° C. or below. In addition, the method can dry the semiconductor substrate.
摘要翻译： 在一个实施例中，公开了半导体衬底清洗方法。 该方法可以使用80℃以上的化学物质来清洗半导体衬底。 该方法可以在清洁半导体衬底之后使用40℃以上的纯水冲洗半导体衬底。 然后，该方法可以通过使用30℃或更低的纯水冲洗半导体衬底。 此外，该方法可以干燥半导体衬底。
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公开(公告)号：US20130068257A1
公开(公告)日：2013-03-21
申请号：US13423583
申请日：2012-03-19
申请人： Hiroshi TOMITA , Minako Inukai , Hiaashi Okuchi , Linan Ji
发明人： Hiroshi TOMITA , Minako Inukai , Hiaashi Okuchi , Linan Ji
CPC分类号： H01L21/67005 , H01L21/02057 , H01L21/67028
摘要： According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.
摘要翻译： 根据一个实施例，一种用于清洁半导体衬底的方法包括：在预定温度下对半导体衬底加热的同时，在形成有凹凸图案的半导体衬底的表面上提供水蒸气，在停止加热后冷却半导体衬底 以及在半导体衬底上的水蒸气和冷冻水的供应，在冷冻水之后，将纯水供应到半导体衬底上并熔化冷冻的膜，并且在熔化冷冻膜之后干燥半导体衬底。
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5.发明申请SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开使用泡沫/化学混合清洗液的半导体基板清洗方法公开(公告)号：US20110088731A1
公开(公告)日：2011-04-21
申请号：US12978933
申请日：2010-12-27
申请人： Hiroshi TOMITA , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
发明人： Hiroshi TOMITA , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
CPC分类号： H01L21/02057 , B08B3/10 , B08B3/12 , C11D3/0052 , C11D11/0047 , H01L21/02052 , H01L21/67057
摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.
摘要翻译： 已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。
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公开(公告)号：US20100132742A1
公开(公告)日：2010-06-03
申请号：US12560210
申请日：2009-09-15
申请人： Hiroshi TOMITA , Hisashi OKUCHI , Minako INUKAI
发明人： Hiroshi TOMITA , Hisashi OKUCHI , Minako INUKAI
CPC分类号： B08B3/08 , B08B13/00 , H01L21/67051 , H01L21/67748 , H01L21/68707 , H01L21/68728
摘要： A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.
摘要翻译： 根据本发明的实施例的用于清洁纳米压印模板的模板清洁方法包括将晶片放置在设置在室中的台上，清洁放置在台上的晶片，在晶片清洁之后检查晶片的颗粒 ，在检查晶片后将模板放置在平台上，并清洁放置在平台上的模板。
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7.发明申请SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING APPARATUS FOR SEMICONDUCTOR SUBSTRATE 审中-公开半导体基板超临界干燥方法和超临界干燥装置公开(公告)号：US20130061492A1
公开(公告)日：2013-03-14
申请号：US13423374
申请日：2012-03-19
申请人： Hisashi OKUCHI , Hidekazu HAYASHI , Linan JI , Yohei SATO , Hiroshi TOMITA
发明人： Hisashi OKUCHI , Hidekazu HAYASHI , Linan JI , Yohei SATO , Hiroshi TOMITA
IPC分类号： F26B5/04
摘要： According to one embodiment, a supercritical drying apparatus comprises a chamber being hermetically sealable and configured to store a semiconductor substrate, a heater configured to heat an inner side of the chamber, a supply unit configured to supply carbon dioxide to the chamber, a discharge unit configured to discharge carbon dioxide from the chamber, and a rotation unit configured to rotate the chamber by an angle equal to or greater than 90 degrees and equal to or smaller than 180 degrees with respect to the horizontal direction.
摘要翻译： 根据一个实施例，超临界干燥装置包括：气室密封并构造成存储半导体衬底;加热器，其构造成加热室的内侧;供应单元，被配置为向室供应二氧化碳;排放单元 被构造成从所述室排放二氧化碳，以及旋转单元，其被构造成使所述室相对于水平方向旋转等于或大于90度且等于或小于180度的角度。
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公开(公告)号：US20120247516A1
公开(公告)日：2012-10-04
申请号：US13369970
申请日：2012-02-09
申请人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
发明人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。
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公开(公告)号：US20120048304A1
公开(公告)日：2012-03-01
申请号：US13029776
申请日：2011-02-17
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , H01L21/02101
摘要： According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide.
摘要翻译： 根据一个实施方案，超临界干燥方法包括：将超临界位移溶剂表面被湿润的半导体衬底引入腔室; 将基于第一二氧化碳的第一超临界流体供应到所述室; 在供应第一超临界流体之后，向腔室供应基于第二二氧化碳的第二超临界流体; 并且降低所述室的内部压力以使所述第二超临界流体气化并从所述室排出所述气化的第二超临界流体。 第一种二氧化碳是通过回收和循环从室排出的二氧化碳产生的。 第二种二氧化碳不含超临界置换溶剂，或含有浓度低于第一种二氧化碳浓度的超临界置换溶剂。
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公开(公告)号：US20110314689A1
公开(公告)日：2011-12-29
申请号：US12980079
申请日：2010-12-28
CPC分类号： C11D11/0047 , H01L21/02057 , H01L21/67028 , H01L21/67034
摘要： According to one embodiment, a semiconductor substrate whose surface is wet with a chemical solution (solvent) and formed with patterns having an aspect ratio of 10 or more is loaded into a chamber. Then, while the chemical solution (solvent) remains on the semiconductor substrate, its temperature is increased to a predetermined temperature in the range of 160° C. or more and less than the critical temperature of the chemical solution (solvent), and the evaporated chemical solution (solvent) is discharged from the chamber.
摘要翻译： 根据一个实施例，将其表面用化学溶液（溶剂）润湿并且形成有纵横比为10以上的图案的半导体基板装载到室中。 然后，当化学溶液（溶剂）保留在半导体衬底上时，其温度升高到在160℃以上且小于化学溶液（溶剂）的临界温度的范围内的预定温度，并且蒸发 化学溶液（溶剂）从室排出。
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