公开(公告)号：US20080308132A1

公开(公告)日：2008-12-18

申请号：US12129074

申请日：2008-05-29

申请人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

发明人： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

IPC分类号： B08B3/12 ,  B08B3/08

CPC分类号： H01L21/02057 ,  B08B3/10 ,  B08B3/12 ,  C11D3/0052 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/67057

摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.

摘要翻译： 已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

公开(公告)号：US20080064212A1

公开(公告)日：2008-03-13

申请号：US11892634

申请日：2007-08-24

申请人： Yoshihiro Ogawa ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Kaori Umezawa ,  Hiroshi Tomita ,  Atsuko Kawasaki

发明人： Yoshihiro Ogawa ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Kaori Umezawa ,  Hiroshi Tomita ,  Atsuko Kawasaki

IPC分类号： H01L21/311 ,  H01L21/31

CPC分类号： H01L21/3125 ,  C23C18/122 ,  C23C18/1287 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/316 ,  H01L21/3165 ,  H01L21/67086

摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.

摘要翻译： 一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

公开(公告)号：US20060081335A1

公开(公告)日：2006-04-20

申请号：US11246140

申请日：2005-10-11

申请人： Hiroyasu Iimori ,  Hiroshi Tomita ,  Hiroaki Yamada

发明人： Hiroyasu Iimori ,  Hiroshi Tomita ,  Hiroaki Yamada

IPC分类号： C23F1/00 ,  C03C15/00

CPC分类号： H01L21/67253 ,  H01L21/67086

摘要： According to the present invention, there is provided a semiconductor substrate processing apparatus comprising: a processing bath which etches a semiconductor substrate by dipping the semiconductor substrate into a processing solution; an outer bath which is positioned outside said processing bath and receives the processing solution overflowing from said processing bath; a circulation channel which resupplies the processing solution discharged from said outer bath to said processing bath; a heater which adjusts a temperature of the processing solution flowing through said circulation channel; a filter which removes foreign matter in the processing solution flowing through said circulation channel; and a controller which measures, after the semiconductor substrate is loaded into said processing bath, one of the temperature of the processing solution in said processing bath and a time during which the temperature of the processing solution restores a predetermined temperature, calculates a processing time during which the semiconductor substrate is etched on the basis of the measurement result, and etches the semiconductor substrate on the basis of the calculated processing time.

摘要翻译： 根据本发明，提供了一种半导体衬底处理装置，包括：通过将半导体衬底浸入处理溶液来蚀刻半导体衬底的处理槽; 位于所述处理槽外部并接收从所述处理槽溢出的处理溶液的外浴; 循环通道，其将从所述外浴排出的处理溶液补给所述处理槽; 调节流过所述循环通道的处理溶液的温度的加热器; 过滤器，其去除流过所述循环通道的处理溶液中的异物; 以及控制器，其在半导体衬底被加载到所述处理槽中之后，测量所述处理槽中的处理溶液的温度和处理溶液的温度恢复预定温度的时间之一，计算处理溶液的处理时间 基于测量结果蚀刻半导体衬底，并且基于所计算的处理时间蚀刻半导体衬底。

公开(公告)号：US20120118334A1

公开(公告)日：2012-05-17

申请号：US13164119

申请日：2011-06-20

申请人： Hisashi OKUCHI ,  Minako Inukai ,  Hiroshi Tomita

发明人： Hisashi OKUCHI ,  Minako Inukai ,  Hiroshi Tomita

IPC分类号： B01D53/14 ,  B08B3/02

CPC分类号： B01D53/72 ,  B01D2252/103 ,  B01D2257/7022 ,  B01D2257/7027 ,  B01D2257/704 ,  B01D2257/708 ,  B01D2258/0216

摘要： Certain embodiments provide an exhaust gas treatment device, comprising a scrubber unit having a vessel and a sprayer spraying water into the vessel, a first pipe through which a first gas discharged from an external apparatus and containing a non-water-soluble organic solvent is supplied to the vessel, and a second pipe through which a second gas containing a water-soluble organic solvent is supplied to the vessel through the first pipe or directly. In the vessel, the water-soluble organic solvent and the non-water-soluble organic solvent are adsorbed and removed from a mixed gas composed of the first gas and the second gas by the water sprayed from the sprayer. The mixed gas is discharged from the vessel through a third pipe.

摘要翻译： 某些实施例提供了一种废气处理装置，其包括具有容器和喷射器的洗涤器单元，喷雾器将水喷入容器中，第一管道，从外部设备排出并含有非水溶性有机溶剂的第一气体通过该第一管道供应 以及第二管，通过该第二管将含有水溶性有机溶剂的第二气体通过第一管或直接供给到容器。 在容器中，通过从喷雾器喷射的水，从由第一气体和第二气体构成的混合气体吸附除去水溶性有机溶剂和非水溶性有机溶剂。 混合气体通过第三管从容器中排出。

公开(公告)号：US20090255558A1

公开(公告)日：2009-10-15

申请号：US12412638

申请日：2009-03-27

申请人： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

发明人： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/67051

摘要： A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

摘要翻译： 一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

公开(公告)号：US08375964B2

公开(公告)日：2013-02-19

申请号：US12560210

申请日：2009-09-15

申请人： Hiroshi Tomita ,  Hisashi Okuchi ,  Minako Inukai

发明人： Hiroshi Tomita ,  Hisashi Okuchi ,  Minako Inukai

IPC分类号： B08B3/02

CPC分类号： B08B3/08 ,  B08B13/00 ,  H01L21/67051 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68728

摘要： A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.

摘要翻译： 根据本发明的实施例的用于清洁纳米压印模板的模板清洁方法包括将晶片放置在设置在室中的台上，清洁放置在台上的晶片，在晶片清洁之后检查晶片的颗粒 ，在检查晶片后将模板放置在平台上，并清洁放置在平台上的模板。

公开(公告)号：US08961696B2

公开(公告)日：2015-02-24

申请号：US13423583

申请日：2012-03-19

申请人： Hiroshi Tomita ,  Minako Inukai ,  Hiaashi Okuchi ,  Linan Ji

发明人： Hiroshi Tomita ,  Minako Inukai ,  Hiaashi Okuchi ,  Linan Ji

IPC分类号： B08B7/00 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67005 ,  H01L21/02057 ,  H01L21/67028

摘要： According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.

摘要翻译： 根据一个实施例，一种用于清洁半导体衬底的方法包括：在预定温度下对半导体衬底加热的同时，在形成有凹凸图案的半导体衬底的表面上提供水蒸气，在停止加热后冷却半导体衬底 以及在半导体衬底上的水蒸气和冷冻水的供应，在冷冻水之后，将纯水供应到半导体衬底上并熔化冷冻的膜，并且在熔化冷冻膜之后干燥半导体衬底。

公开(公告)号：US08567420B2

公开(公告)日：2013-10-29

申请号：US12412638

申请日：2009-03-27

申请人： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

发明人： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

IPC分类号： B08B3/00 ,  B08B3/12 ,  B08B6/00

CPC分类号： H01L21/02052 ,  H01L21/67051

摘要： A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

摘要翻译： 一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

公开(公告)号：US20100240219A1

公开(公告)日：2010-09-23

申请号：US12801178

申请日：2010-05-26

申请人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

发明人： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC分类号： H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

公开(公告)号：US07776756B1

公开(公告)日：2010-08-17

申请号：US11878965

申请日：2007-07-30

申请人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

发明人： Hisashi Okuchi ,  Hiroyasu Iimori ,  Mami Saito ,  Yoshihiro Ogawa ,  Hiroshi Tomita ,  Soichi Nadahara

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67253 ,  H01L21/31111 ,  H01L21/67086

摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

摘要翻译： 蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。