Method for manufacturing gallium nitride crystal and gallium nitride wafer
    3.
    发明授权
    Method for manufacturing gallium nitride crystal and gallium nitride wafer 有权
    制造氮化镓晶体和氮化镓晶片的方法

    公开(公告)号:US08147612B2

    公开(公告)日:2012-04-03

    申请号:US12298332

    申请日:2007-04-24

    IPC分类号: C30B21/02

    摘要: There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

    摘要翻译: 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度,高结晶度和耐龟裂性的氮化镓晶体的方法, 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79,以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a,从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

    Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and Product
    4.
    发明申请
    Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
    生产GaxIn1-xN(0x)晶体Gaxin1-xn(0

    公开(公告)号:US20090032907A1

    公开(公告)日:2009-02-05

    申请号:US11919705

    申请日:2006-08-17

    IPC分类号: H01L29/20 H01L21/20

    摘要: It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.

    摘要翻译: 看来,通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而,这种常规方法具有问题 因为当加热器(5)和(6)加热时,石英反应管(1)熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN(0≤x≤1) )晶体(12)通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板(7)的表面上生长GaxIn1-xN(0 <= x <= 1)晶体(12) 在石英反应管(1)中,在GaxIn1-xN(0 <= x <= 1)晶体(12)生长期间,石英反应管(1)被外部加热, 基底基板(7)被单独加热。

    GaN-crystal free-standing substrate and method for producing the same
    5.
    发明授权
    GaN-crystal free-standing substrate and method for producing the same 有权
    GaN结晶自支撑衬底及其制造方法

    公开(公告)号:US08574364B2

    公开(公告)日:2013-11-05

    申请号:US13235989

    申请日:2011-09-19

    摘要: The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

    摘要翻译: 本发明涉及由具有(0001)面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板, (0001)平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面, 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下,氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下,硅浓度为5×10 17原子/ cm 3以下,氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

    GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME 有权
    GaN晶体自由显示基板及其制造方法

    公开(公告)号:US20120034149A1

    公开(公告)日:2012-02-09

    申请号:US13235989

    申请日:2011-09-19

    IPC分类号: C01B21/06 C30B25/02

    摘要: The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

    摘要翻译: 本发明涉及由具有(0001)面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板, (0001)平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面, 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下,氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下,硅浓度为5×10 17原子/ cm 3以下,氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

    Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate
    7.
    发明申请
    Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate 审中-公开
    氮化镓晶体基板,半导体器件,半导体器件的制造方法以及识别氮化镓晶体基板的方法

    公开(公告)号:US20070145376A1

    公开(公告)日:2007-06-28

    申请号:US11616016

    申请日:2006-12-26

    IPC分类号: H01L29/15

    摘要: Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface area of 10 cm2 or more. The difference between the maximum and the minimum of Raman shifts corresponding to the E2H phonon mode in a region except for a region from the outer periphery in the surface of the gallium nitride crystal substrate to a line 5 mm radially inward from the outer periphery of the surface is 0.5 cm−1 or less. And also affords semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates.

    摘要翻译: 提供了当制造半导体器件时可以减少GaN晶体衬底中的裂纹和断裂的发生的GaN晶体衬底,包括它们的半导体器件,半导体器件的制造方法以及识别GaN晶体衬底的方法。 氮化镓晶体基板的表面积为10cm 2以上。 在除了从氮化镓晶体基板的表面的外周到管线5mm的区域以外的区域中,对应于E&lt; 2H&gt;声子模式的拉曼位移的最大值和最小值之间的差异 从表面的外周向内径向内侧为0.5cm -1以下。 并且还提供包括它们的半导体器件,制造半导体器件的方法以及识别GaN晶体衬底的方法。

    AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate
    9.
    发明申请
    AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 有权
    AlxGayIn1-x-yN基板,AlxGayIn1-x-yN基板的清洗方法,AIN基板和AIN基板的清洗方法

    公开(公告)号:US20060003134A1

    公开(公告)日:2006-01-05

    申请号:US11148239

    申请日:2005-06-09

    IPC分类号: B32B9/00

    CPC分类号: C30B33/00 Y10T428/21

    摘要: An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

    摘要翻译: 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中,当Al x N 2的直径为至多20个数量时, 在1-xy N衬底中的Ga 2 y是两英寸,并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外,在Al-N-N基底中,在Al 2 O 3的表面的光电子光谱中, 通过X射线光电子能谱检测角度为10°,在1-xy N衬底中,峰面积C < SUB> 1s电子和N 1s电子的峰面积(C 1s电子峰面积/ N 1s电子峰面积) 至多为3,并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外,AlN基板,其中,通过X射线光电子能谱法测定AlN基板的表面的光电子光谱,检测角度为10°,Al 2基板的峰面积 电子和N 1s电子的峰面积(Al 2 S 3电子峰面积/ N 1s电子峰面积)为0.65以下,清洗 提供了可以获得AlN衬底的方法。

    ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate
    10.
    发明申请
    ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 审中-公开
    AlxGayIn1-x-yN基板,AlxGayIn1-x-yN基板的清洗方法,AIN基板和AIN基板的清洗方法

    公开(公告)号:US20080299375A1

    公开(公告)日:2008-12-04

    申请号:US12149776

    申请日:2008-05-08

    IPC分类号: C01B21/072 B32B9/00

    CPC分类号: C30B33/00 Y10T428/21

    摘要: An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

    摘要翻译: 当AlxGayIn1-x-yN基板的直径为2英寸时,AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板 以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。 此外,AlxGayIn1-x-yN衬底,其中,通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱,检测角度为10°时,C1s电子的峰面积之比 并且N1s电子的峰面积(C1s电子峰面积/ N1s电子峰面积)为3以下,提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。 另外,AlN基板,其中,通过X射线光电子能谱法测定AlN基板的表面的光电子光谱,检测角度为10°,Al2s电子的峰面积与N1s电子的峰面积之比 (Al 2 S电子峰面积/ N1s电子峰面积)为0.65以下,设置可获得AlN基板的清洗方法。