摘要:
An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译:本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。 由此,可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板,用作半导体器件的基板,包括Al x Ga y In 1-x-y N晶体基板的半导体器件,以及 制造相同。
摘要:
An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译:本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。 主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。 内部区域的总位错密度为至少1×102cm-2,最多为1×106cm-31.2。由此,可以提供具有大尺寸和合适位错密度的Al x Ga y In 1-x-y N晶体基板,用作 用于半导体器件的衬底,包括Al x Ga y In 1-x-y N晶体衬底的半导体器件及其制造方法。
摘要:
There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要:
It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译:看来,通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而,这种常规方法具有问题 因为当加热器(5)和(6)加热时,石英反应管(1)熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN(0≤x≤1) )晶体(12)通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板(7)的表面上生长GaxIn1-xN(0 <= x <= 1)晶体(12) 在石英反应管(1)中,在GaxIn1-xN(0 <= x <= 1)晶体(12)生长期间,石英反应管(1)被外部加热, 基底基板(7)被单独加热。
摘要:
The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.
摘要翻译:本发明涉及由具有(0001)面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板, (0001)平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面, 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下,氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下,硅浓度为5×10 17原子/ cm 3以下,氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。
摘要:
The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.
摘要翻译:本发明涉及由具有(0001)面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板, (0001)平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面, 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下,氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下,硅浓度为5×10 17原子/ cm 3以下,氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。
摘要:
Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface area of 10 cm2 or more. The difference between the maximum and the minimum of Raman shifts corresponding to the E2H phonon mode in a region except for a region from the outer periphery in the surface of the gallium nitride crystal substrate to a line 5 mm radially inward from the outer periphery of the surface is 0.5 cm−1 or less. And also affords semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates.
摘要:
Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要:
An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译:在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中,当Al x N 2的直径为至多20个数量时, 在1-xy N衬底中的Ga 2 y是两英寸,并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外,在Al-N-N基底中,在Al 2 O 3的表面的光电子光谱中, 通过X射线光电子能谱检测角度为10°,在1-xy N衬底中,峰面积C < SUB> 1s电子和N 1s电子的峰面积(C 1s电子峰面积/ N 1s电子峰面积) 至多为3,并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外,AlN基板,其中,通过X射线光电子能谱法测定AlN基板的表面的光电子光谱,检测角度为10°,Al 2基板的峰面积 电子和N 1s电子的峰面积(Al 2 S 3电子峰面积/ N 1s电子峰面积)为0.65以下,清洗 提供了可以获得AlN衬底的方法。
摘要:
An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译:当AlxGayIn1-x-yN基板的直径为2英寸时,AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板 以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。 此外,AlxGayIn1-x-yN衬底,其中,通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱,检测角度为10°时,C1s电子的峰面积之比 并且N1s电子的峰面积(C1s电子峰面积/ N1s电子峰面积)为3以下,提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。 另外,AlN基板,其中,通过X射线光电子能谱法测定AlN基板的表面的光电子光谱,检测角度为10°,Al2s电子的峰面积与N1s电子的峰面积之比 (Al 2 S电子峰面积/ N1s电子峰面积)为0.65以下,设置可获得AlN基板的清洗方法。