公开(公告)号：US20240099042A1

公开(公告)日：2024-03-21

申请号：US18185951

申请日：2023-03-17

Applicant: Nanosys, Inc.

Inventor： Jesse R. MANDERS

IPC: H10K50/115 ,  H10K50/852 ,  H10K50/86 ,  H10K59/35

CPC classification number: H10K50/115 ,  H10K50/852 ,  H10K50/865 ,  H10K59/35

Abstract: Embodiments of a display device are described. A display device includes first and second sub-pixels. The first sub-pixel includes a first light source having a quantum dot (QD) film, a blocking layer disposed on the QD film, and a first portion of an organic phosphor film disposed on the blocking layer and a first substrate configured to support the first light source. The blocking layer is configured to prevent emission of light from the first portion of the organic phosphor film and the QD film is configured to emit a primary emission peak wavelength in a red, green, cyan, yellow, or magenta wavelength region of an electromagnetic (EM) spectrum. The second sub-pixel includes a second light source and a second substrate configured to support the second light source. The second light source has a second portion of the organic phosphor film disposed adjacent to the QD film. The second portion of the organic phosphor film is configured to emit a primary emission peak wavelength in a blue, violet, or ultraviolet wavelength region of an EM spectrum.

公开(公告)号：US20230223494A1

公开(公告)日：2023-07-13

申请号：US18150976

申请日：2023-01-06

Applicant: NANOSYS, INC.

Inventor： Zhen CHEN ,  Saket CHADDA ,  Shuke YAN

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  H01L33/06 ,  H01L33/38 ,  H01L25/075

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/62 ,  H01L33/06 ,  H01L33/382 ,  H01L25/0753 ,  H01L2933/0016

Abstract: A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.

公开(公告)号：US20230161193A1

公开(公告)日：2023-05-25

申请号：US17991404

申请日：2022-11-21

Applicant: Nanosys, Inc.

Inventor： Ernest Chung-Wei LEE ,  Charles HOTZ

IPC: G02F1/13357 ,  G02F1/1335

CPC classification number: G02F1/133603 ,  G02F1/133528 ,  G02F1/133504 ,  G02F1/133509 ,  G02F2202/36

Abstract: Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The light source is configured to emit a primary light having a first peak wavelength. The LCD module includes a first sub-pixel having a phosphor film and a second sub-pixel having a non-phosphor film. The phosphor film is configured to receive a first portion of the primary light and to convert the first portion of the primary light to emit a secondary light having a second peak wavelength that is different from the first peak wavelength. The non-phosphor film is configured to receive a second portion of the primary light and to optically modify the second portion of the primary light to emit an optically modified primary light having a third peak wavelength that is different from the first and second peak wavelengths.

公开(公告)号：US20230155079A1

公开(公告)日：2023-05-18

申请号：US17980683

申请日：2022-11-04

Applicant: NANOSYS, INC.

Inventor： Brian KIM ,  Homer ANTONIADIS

IPC: H01L33/50

CPC classification number: H01L33/507 ,  H01L33/502

Abstract: A light emitting device includes a light emitting diode configured to emit blue or ultraviolet radiation incident photons, a color conversion material located over the light emitting diode and configured to absorb the incident photons emitted by the light emitting diode and to generate converted photons having a longer peak wavelength than a peak wavelength of the incident photons, and at least one light extracting feature located between the light emitting diode and the color conversion material.

公开(公告)号：US11634631B2

公开(公告)日：2023-04-25

申请号：US16722768

申请日：2019-12-20

Applicant: Nanosys, Inc.

Inventor： John Curley ,  Chunming Wang ,  Jay Yamanaga ,  Xiaofeng Zhang ,  Christian Ippen

IPC: C09K11/88 ,  H01L33/50 ,  H01L27/32 ,  C09K11/08 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/13357 ,  G02F1/1335

Abstract: The invention relates to highly luminescent nanostructures with improved blue light absorbance, particularly core/shell nanostructures comprising a ZnSe core and InP and/or ZnS shell layers. The invention also relates to methods of producing such nanostructures.

公开(公告)号：US11634629B2

公开(公告)日：2023-04-25

申请号：US16925786

申请日：2020-07-10

Applicant: Nanosys, Inc.

Inventor： Daekyoung Kim ,  Wenzhou Guo ,  Alexander Tu ,  Yeewah Annie Chow ,  Diego Barrera ,  Christian Ippen ,  Benjamin Newmeyer ,  Ruiqing Ma

IPC: H01L33/50 ,  C09K11/88 ,  H01L33/06 ,  H01L29/06 ,  C09K11/70

Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent core/shell nanostructures with zinc fluoride and zinc acetate bound to their surface. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.

公开(公告)号：US20230066558A1

公开(公告)日：2023-03-02

申请号：US17818097

申请日：2022-08-08

Applicant: NANOSYS, INC.

Inventor： Brian KIM

IPC: H01L33/56 ,  H01L33/10 ,  H01L33/00 ,  H01L27/15

Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, such that each of the light emitting diodes includes a stack of a first doped semiconductor layer, a second doped semiconductor layer and an active region located between the first and the second doped semiconductor layers, and a conductive encapsulation layer in contact with sidewalls of the first doped semiconductor layers of the array of light emitting diodes.

公开(公告)号：US20220384404A1

公开(公告)日：2022-12-01

申请号：US17818822

申请日：2022-08-10

Applicant: NANOSYS, INC.

Inventor： Willibrordus Gerardus Maria VAN DEN HOEK ,  Tsun Yin LAU ,  Cameron DANESH ,  Fariba DANESH

IPC: H01L25/16 ,  H01L33/40 ,  H01L33/62 ,  H01L33/56 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/24 ,  H01L33/08 ,  H01L33/00

Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

公开(公告)号：US20220278258A1

公开(公告)日：2022-09-01

申请号：US17549543

申请日：2021-12-13

Applicant: Nanosys, Inc.

Inventor： Ernest C. Lee

IPC: H01L33/60 ,  H01L23/538 ,  F21V9/20 ,  H01L25/075 ,  C09K11/88 ,  C09K11/02 ,  H05B33/14

Abstract: Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

公开(公告)号：US11380863B2

公开(公告)日：2022-07-05

申请号：US16822931

申请日：2020-03-18

Applicant: Nanosys, Inc.

Inventor： Donald A. Zehnder ,  Dylan C. Hamilton ,  Ruiqing Ma ,  Jesse R. Manders

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L33/04 ,  H01L33/06 ,  H01L33/44 ,  H01L27/32 ,  H01L51/56

Abstract: Embodiments of a flexible electroluminescent (EL) device are described. An EL device includes a device stack and a flexible substrate configured to support the device stack. The device stack can include a anode and a cathode, a quantum dot (QD) film positioned between the anode and the cathode and configured to produce light having a first peak wavelength. The device stack further includes a patterned insulating layer disposed on the anode and configured to form electrically active regions in the device stack and to control emission of the light from the EL device through the electrically active regions. The EL device further includes an encapsulation layer disposed on the cathode.