公开(公告)号：US06791194B1

公开(公告)日：2004-09-14

申请号：US09493210

申请日：2000-01-28

申请人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

发明人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

IPC分类号： H01L2348

CPC分类号： H01L24/50 ,  H01L23/3107 ,  H01L23/4951 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/10329 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250° C.).

摘要翻译： 通过在半导体封装结构中设置用于吸收安装基板和半导体元件之间的热膨胀差的缓冲体，即使使用有机材料来安装基板，也可获得具有优异的连接可靠性的半导体器件。 使用薄膜材料作为用于缓冲由安装基板和半导体元件之间的热膨胀差异产生的热应力的本体。 膜材料在回流温度范围（200-250℃）中的弹性模量至少为1MPa。

公开(公告)号：US6114753A

公开(公告)日：2000-09-05

申请号：US857674

申请日：1997-05-16

申请人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

发明人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

IPC分类号： H01L21/60 ,  H01L23/12 ,  H01L23/31 ,  H01L23/495 ,  H01L23/485

CPC分类号： H01L24/06 ,  H01L23/3107 ,  H01L23/4951 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  Y10T428/28 ,  Y10T428/2848

摘要： A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250.degree. C.).

摘要翻译： 具有优异的连接可靠性的半导体器件通过在半导体封装结构中设置用于吸收安装基板和半导体元件之间的热膨胀差的缓冲体，即使将有机材料用于安装基板也是可以获得的。 使用薄膜材料作为用于缓冲由安装基板和半导体元件之间的热膨胀差异产生的热应力的本体。 膜材料的回流温度范围（200-250℃）的弹性模量至少为1MPa。

公开(公告)号：US07202570B2

公开(公告)日：2007-04-10

申请号：US10724092

申请日：2003-12-01

申请人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

发明人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44 ,  H01L21/48 ,  B32B3/06 ,  B32B7/12

CPC分类号： H01L24/06 ,  H01L23/3107 ,  H01L23/4951 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/06136 ,  H01L2224/48 ,  H01L2224/48091 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/30107 ,  H01L2924/351 ,  Y10T156/107 ,  Y10T428/249955 ,  Y10T428/28 ,  Y10T428/2848 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200–250° C.).

摘要翻译： 具有优异的连接可靠性的半导体器件通过在半导体封装结构中设置用于吸收安装基板和半导体元件之间的热膨胀差的缓冲体，即使将有机材料用于安装基板也是可以获得的。 使用薄膜材料作为用于缓冲由安装基板和半导体元件之间的热膨胀差异产生的热应力的本体。 膜材料在回流温度范围（200-250℃）中的弹性模量至少为1MPa。

公开(公告)号：US6097100A

公开(公告)日：2000-08-01

申请号：US915334

申请日：1997-08-20

申请人： Shuji Eguchi ,  Yasuhide Sugawara ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Akira Nagai ,  Ryou Moteki ,  Ogino Masahiko ,  Masanori Segawa ,  Rie Hattori ,  Nobutake Tsuyuno ,  Takumi Ueno ,  Atsushi Nakamura ,  Asao Nishimura

发明人： Shuji Eguchi ,  Yasuhide Sugawara ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Akira Nagai ,  Ryou Moteki ,  Ogino Masahiko ,  Masanori Segawa ,  Rie Hattori ,  Nobutake Tsuyuno ,  Takumi Ueno ,  Atsushi Nakamura ,  Asao Nishimura

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/495 ,  H01L23/28

CPC分类号： H01L23/4951 ,  H01L23/293 ,  H01L23/3128 ,  H01L2224/05624 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/92 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181

摘要： A resin encapsulated semiconductor element is encapsulated with resin composition containing an organic compound selected from the group consisting of organobromine compounds, organophosphorus compounds and organonitrogen compounds, an inorganic filler, and a metal borate. The obtained resin encapsulated semiconductor element has the same flame resistance as a conventional semiconductor element which is encapsulated with a resin composition containing a halogen and antimony compound, and furthermore, has remarkably improved reliabilities regarding moisture resistance and storing at a high temperature by effects of the contained metal borate for suppressing generation of or trapping released gas components, such as halogen or phosphorus, and others.

摘要翻译： 树脂封装的半导体元件用含有有机化合物的树脂组合物包封，所述有机化合物选自有机溴化合物，有机磷化合物和有机氮化合物，无机填料和金属硼酸盐。 所获得的树脂封装的半导体元件具有与用含有卤素和锑化合物的树脂组合物封装的常规半导体元件相同的阻燃性，并且还具有显着提高的耐湿性的可靠性和高温下的存储 含有金属硼酸盐，用于抑制诸如卤素或磷的释放气体组分的产生或捕获等。