-
公开(公告)号：US08633088B2
公开(公告)日：2014-01-21
申请号：US13460020
申请日：2012-04-30
Applicant: Ruben B Montez , Robert F Steimle
Inventor： Ruben B Montez , Robert F Steimle
CPC classification number: H01L23/10 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , H01L21/743 , H01L23/04 , H01L23/053 , H01L24/05 , H01L24/06 , H01L24/94 , H01L2224/04042 , H01L2224/06155 , H01L2224/83 , H01L2224/94 , H01L2924/0002 , H01L2924/14 , H01L2924/1461 , H01L2924/16152 , H01L2924/16235 , H01L2924/16251 , H01L2924/16788 , H01L2924/00
Abstract: A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically conductive ring between the support substrate and the cap substrate. The electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer bond ring around the semiconductor device.
Abstract translation: 一种键合半导体器件，包括支撑衬底，相对于所述支撑衬底的一侧定位的半导体器件，覆盖所述支撑衬底和所述器件的帽衬底，所述支撑衬底和所述帽衬底之间的玻璃料接合环，电 支撑基板和盖基板之间的导电环。 导电环在半导体器件周围形成内环，并且玻璃料接合环在半导体器件周围形成外部结合环。
-
2.发明授权Reducing microelectromechanical systems stiction by formation of a silicon carbide layer 有权通过形成碳化硅层来减少微机电系统的粘滞公开(公告)号：US09108842B2
公开(公告)日：2015-08-18
申请号：US13946729
申请日：2013-07-19
Applicant: Michael D. Turner , Ruben B. Montez
Inventor： Michael D. Turner , Ruben B. Montez
CPC classification number: B81C1/0038 , B81B3/0005 , B81C2201/112
Abstract: A mechanism is provided for reducing stiction in a MEMS device by forming a near-uniform silicon carbide layer on silicon surfaces using carbon from TEOS-based silicon oxide sacrificial films used during fabrication. By using the TEOS as a source of carbon to form an antistiction coating, all silicon surfaces can be coated, including those that are difficult to coat using standard self-assembled monolayer (SAM) processes (e.g., locations beneath the proof mass). Controlled processing parameters, such as temperature, length of time for annealing, and the like, provide for a near-uniform silicon carbide coating not provided by previous processes.
Abstract translation: 提供了一种用于通过在制造期间使用的基于TEOS的氧化硅牺牲膜的碳在硅表面上形成近均匀的碳化硅层来减少MEMS器件中的静摩擦的机构。 通过使用TEOS作为碳源来形成抗静电涂层，可以涂覆所有的硅表面，包括使用标准自组装单层（SAM）工艺（例如，证明质量下方的位置）难以涂覆的硅表面。 诸如温度，退火时间长度等受控加工参数提供了以前的方法未提供的近均匀的碳化硅涂层。
-
公开(公告)号：US08895339B2
公开(公告)日：2014-11-25
申请号：US13718598
申请日：2012-12-18
Applicant: Ruben B. Montez , Robert F. Steimle
Inventor： Ruben B. Montez , Robert F. Steimle
CPC classification number: B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0038 , B81C1/00952 , B81C2201/0169 , B81C2201/112 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.
Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。
-
公开(公告)号：US20140167188A1
公开(公告)日：2014-06-19
申请号：US13718598
申请日：2012-12-18
Applicant: Ruben B. Montez , Robert F. Steimle
Inventor： Ruben B. Montez , Robert F. Steimle
CPC classification number: B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0038 , B81C1/00952 , B81C2201/0169 , B81C2201/112 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.
Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。
-
5.发明申请MICROELECTROMECHANICAL DEVICE WITH ISOLATED MICROSTRUCTURES AND METHOD OF PRODUCING SAME 有权具有隔离微结构的微电子器件及其制造方法公开(公告)号：US20100155861A1
公开(公告)日：2010-06-24
申请号：US12340202
申请日：2008-12-19
Applicant: Lisa Z. Zhang , Lisa H. Karlin , Ruben B. Montez , Woo Tae Park
Inventor： Lisa Z. Zhang , Lisa H. Karlin , Ruben B. Montez , Woo Tae Park
IPC: H01L29/84 , H01L21/762
CPC classification number: B81C1/00698
Abstract: A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).
Abstract translation: 微机电系统（MEMS）装置（20）包括多晶硅结构层（46），该多晶硅结构层（46）具有形成在其中的悬浮在衬底（22）上方的可移动微结构（28）。 绝缘沟槽（56）延伸穿过层（46），使得微结构（28）横向锚定到隔离沟槽（56）。 形成覆盖衬底（22）的牺牲层（22），并且覆盖牺牲层（22）上形成结构层（46）。 隔离沟槽（56）通过蚀刻穿过多晶硅结构层（46）并在沟槽（56）中沉积诸如富含硅的氮化物的氮化物（72）形成。 然后在结构层（46）中形成微结构（28），并且在隔离沟槽（56）上形成电连接（30）。 随后去除牺牲层（22）以形成具有与衬底（22）间隔开的隔离微结构（28）的MEMS器件（20）。
-
Patent Agency Ranking
公开(公告)号：US09463973B2
公开(公告)日：2016-10-11
申请号：US14529824
申请日：2014-10-31
Applicant: Ruben B. Montez , Robert F. Steimle
Inventor： Ruben B. Montez , Robert F. Steimle
CPC classification number: B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0038 , B81C1/00952 , B81C2201/0169 , B81C2201/112 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.
Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。
-
7.发明授权Method of producing microelectromechanical device with isolated microstructures 有权具有隔离微结构的微机电装置的制造方法公开(公告)号：US07943525B2
公开(公告)日：2011-05-17
申请号：US12340202
申请日：2008-12-19
Applicant: Lisa Z. Zhang , Lisa H. Karlin , Ruben B. Montez , Woo Tae Park
Inventor： Lisa Z. Zhang , Lisa H. Karlin , Ruben B. Montez , Woo Tae Park
IPC: H01L21/302
CPC classification number: B81C1/00698
Abstract: A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).
Abstract translation: 微机电系统（MEMS）装置（20）包括多晶硅结构层（46），该多晶硅结构层（46）具有形成在其中的悬浮在衬底（22）上方的可移动微结构（28）。 绝缘沟槽（56）延伸穿过层（46），使得微结构（28）横向锚定到隔离沟槽（56）。 形成覆盖衬底（22）的牺牲层（22），并且覆盖牺牲层（22）上形成结构层（46）。 隔离沟槽（56）通过蚀刻穿过多晶硅结构层（46）并在沟槽（56）中沉积诸如富含硅的氮化物的氮化物（72）形成。 然后在结构层（46）中形成微结构（28），并且在隔离沟槽（56）上形成电连接（30）。 随后去除牺牲层（22）以形成具有与衬底（22）间隔开的隔离微结构（28）的MEMS器件（20）。
-
公开(公告)号：US20100181676A1
公开(公告)日：2010-07-22
申请号：US12356939
申请日：2009-01-21
Applicant: RUBEN B. MONTEZ , Alex P. Pamatat
Inventor： RUBEN B. MONTEZ , Alex P. Pamatat
IPC: H01L23/52 , H01L21/4763
CPC classification number: H01L23/10 , B81B2207/097 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , H01L21/50 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/02 , H01L2224/022 , H01L2224/036 , H01L2224/0391 , H01L2224/04026 , H01L2224/05558 , H01L2224/05572 , H01L2224/05638 , H01L2224/2745 , H01L2224/27452 , H01L2224/2746 , H01L2224/276 , H01L2224/29013 , H01L2224/29016 , H01L2224/29083 , H01L2224/29111 , H01L2224/29117 , H01L2224/29124 , H01L2224/29138 , H01L2224/29144 , H01L2224/29155 , H01L2224/29157 , H01L2224/29166 , H01L2224/29169 , H01L2224/29181 , H01L2224/29184 , H01L2224/32145 , H01L2224/32225 , H01L2224/32502 , H01L2224/32506 , H01L2224/83193 , H01L2224/83203 , H01L2224/83411 , H01L2224/83424 , H01L2224/83444 , H01L2224/83455 , H01L2224/83457 , H01L2224/83466 , H01L2224/83469 , H01L2224/83481 , H01L2224/83484 , H01L2224/83805 , H01L2224/94 , H01L2924/10157 , H01L2924/15159 , H01L2924/164 , H01L2924/01032 , H01L2924/01014 , H01L2924/01029 , H01L2924/00014 , H01L2924/00012 , H01L2224/83
Abstract: A method that in one embodiment is useful in bonding a first substrate to a second substrate includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate is formed a first layer comprising silicon. A second layer comprising germanium and silicon is formed on the first layer. A third layer comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.
Abstract translation: 在一个实施方案中用于将第一衬底粘合到第二衬底的方法包括在第一衬底上形成包括金属的层。 在一个实施例中包括金属的层围绕半导体器件，其可以是微机电系统（MEMS）器件。 在第二基板上形成包含硅的第一层。 在第一层上形成包括锗和硅的第二层。 在第二层上形成包含锗的第三层。 第三层与包括金属的层接触。 在第三层和包含金属的层上施加热（和一些实施例中的压力）以在第一基板和第二基板之间形成机械接合材料，其中机械接合材料是导电的。 在诸如MEMS之类的半导体器件周围的机械接合的情况下，作为用于保护MEMS的气密密封件，机械结合可能是特别有利的。
-
公开(公告)号：US09290380B2
公开(公告)日：2016-03-22
申请号：US13718614
申请日：2012-12-18
Applicant: Robert F. Steimle , Ruben B. Montez
Inventor： Robert F. Steimle , Ruben B. Montez
CPC classification number: B81B3/001 , B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0096 , B81C2201/115 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.
Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的机构。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米团簇形成。 当MEMS器件的下一部分形成在牺牲层上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙的表面减小了可用于MEMS器件中的接触的表面积，并且进而降低了可赋予粘性的面积。
-
公开(公告)号：US20160031698A1
公开(公告)日：2016-02-04
申请号：US14446910
申请日：2014-07-30
Applicant: Robert F. Steimle , Ruben B. Montez
Inventor： Robert F. Steimle , Ruben B. Montez
CPC classification number: B81B3/001 , B81B2201/0235 , B81B2203/0181
Abstract: Certain microelectromechanical systems (MEMS) devices, and methods of creating them, are disclosed. The method may include forming a structural layer over a substrate; forming a mask layer over the structural layer, wherein the mask layer is formed with a material selective to an etching process; forming a plurality of nanoclusters on the mask layer; and etching the structural layer using at least the etching process.
Abstract translation: 公开了某些微机电系统（MEMS）设备及其创建方法。 该方法可以包括在衬底上形成结构层; 在所述结构层上形成掩模层，其中所述掩模层由对蚀刻工艺选择的材料形成; 在掩模层上形成多个纳米团簇; 并使用至少蚀刻工艺蚀刻结构层。
-
-
-
-
-
-
-
-
-
Search Results
19
records
(took 0.012 seconds)
