摘要:
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.
摘要:
An MRAM device includes a lower electrode on a substrate, an MTJ structure on the lower electrode, a metal oxide pattern on the MTJ structure, a conductive pattern on at least a portion of a sidewall of the metal oxide pattern, and an upper electrode on the metal oxide pattern and the conductive pattern. The conductive pattern has a thickness varying along the sidewall of the metal oxide pattern in a plan view.
摘要:
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.
摘要:
A method of controlling a transmission of a vehicle may include generating a first synchronization force between a shift gear of a target gear and an output shaft to shift gears from a current gear to a lower gear set as the target gear in response to deceleration of the vehicle, so as to form a first synchronization, removing the first synchronization force between the shift gear and the output shaft after the generating of the first synchronization force, and generating a second synchronization force between the shift gear of the target gear and the output shaft after the removing of the first synchronization force, so as to form a second synchronization.
摘要:
The present invention relates to a portable computer comprising a main body unit which forms an image signal by reading and processing data; and a display unit which is plurally provided and has a plate surface displaying an image thereon and overlapping each other to rotate with respect to the main body casing, is detachably mounted in the display supporter, displays an image only on a most front plate surface when mounted in the display supporter, receives an image signal of the most front plate surface and selectively displays a same or different images thereon if it is separated from the display supporter.Accordingly, applicability and convenience of the portable computer may improve.
摘要:
Provided is a flexible electrophoretic display. The flexible electrophoretic display includes a grayscale representation unit for representing grayscales in unit areas using reflection and transmission; upper and lower electrodes for applying a voltage to the grayscale representation unit; and a plurality of colored particles formed on the upper electrode for representing color. The upper electrode is formed of a transparent conductive material. External incident light is reflected by the colored particles formed on the upper electrode for color implementation by the flexible electrophoretic display. Thus, a compact, flexible electrophoretic display capable of displaying a high-definition image with multi-color and multi-gradation can be implemented by using multi-colored particle layers formed of metallic nano-particles.
摘要:
Disclosed herein is a thin film thermoelectric module. the module includes high and low temperature part module substrates, unit thermoelectric devices, and lead wires. The high and low temperature part module substrates are arranged to face each other. The unit thermoelectric devices are located between the modules to transfer heat between the modules. The lead wires are connected to the electrodes of the unit thermoelectric devices. Each of the unit thermoelectric devices includes a pair of lower and upper substrates, electrodes, and a thermoelectric material. The pair of lower and upper substrates are arranged to face each other. The electrodes are formed on the upper surface of the lower substrate and the lower surface of the upper substrate. The thermoelectric material is disposed between the electrodes.
摘要:
A semiconductor memory device which includes an internal voltage generator circuit for adjusting an external power supply voltage and generating first and second internal power supply voltages. The first internal power supply voltage is supplied to a memory cell array via a first power supply line, and the second internal power supply voltage is supplied to a peripheral circuit via a second power supply line. A control circuit controls the internal voltage generator circuit so that the levels of the first and second internal power supply voltages vary depending on a mode of operation.
摘要:
A non-volatile memory device and a method for manufacturing the same are disclosed. A non-volatile memory device comprises a semiconductor substrate having active areas which extend in a first direction and are repeatedly arranged in a second direction orthogonal to the first direction, a plurality of word lines formed on the semiconductor substrate which extending in the second direction while being repeatedly arranged in the first direction, string select lines adjacent to a first word line and extending in the second direction, ground select lines adjacent to a last word line and extending in the second direction, a first insulating interlayer formed on the resultant structure and comprising a first opening exposing the active area between the ground select lines and a second opening exposing the active area between the string select lines, a bit line contact pad formed in the second opening. A sidewall of the contact pad comprises a negative slope in the first direction and a positive slope in the second direction. A hard mask layer pattern, having the same pattern size as the active area, is formed on the contact pad and the first insulating interlayer. A second insulating interlayer is formed on the hard mask layer pattern and the first insulating interlayer. The second insulating interlayer has a bit line contact hole on the contact pad and thus the process margin is sufficiently achieved.
摘要:
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.