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公开(公告)号：US11781713B2
公开(公告)日：2023-10-10
申请号：US17690120
申请日：2022-03-09
Applicant: Mayank Pareek , Ashwini K Sinha , Stanley M Smith , Ranko Bursac , Amber L Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A. Marconi, Jr.
Inventor： Mayank Pareek , Ashwini K Sinha , Stanley M Smith , Ranko Bursac , Amber L Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A. Marconi, Jr.
CPC classification number: F17C7/04 , B62B3/104 , B62B5/0414 , C23C16/4581 , F17C13/08 , B62B2202/022 , B62B2203/44 , F17C1/00 , F17C2201/0109 , F17C2201/035 , F17C2201/056 , F17C2201/058 , F17C2205/0107 , F17C2205/0161 , F17C2223/0123 , F17C2223/0153 , F17C2223/036 , F17C2260/00
Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.
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2.发明申请BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION 有权含硼含量的组合物，系统及其使用方法，用于提高离子束电流和在硼离子植入过程中的性能公开(公告)号：US20150248992A1
公开(公告)日：2015-09-03
申请号：US14635413
申请日：2015-03-02
Applicant: ASHWINI K. SINHA , STANLEY M. SMITH , DOUGLAS C. HEIDERMAN , SERGE M. CAMPEAU
Inventor： ASHWINI K. SINHA , STANLEY M. SMITH , DOUGLAS C. HEIDERMAN , SERGE M. CAMPEAU
IPC: H01J37/317 , C01B3/00 , H01J37/08
CPC classification number: H01J37/3171 , C01B3/00 , H01J27/22 , H01J37/08 , H01J37/32458 , H01J37/32807 , H01J2237/006 , H01J2237/0473 , H01J2237/08 , H01J2237/0815 , H01J2237/31701 , H01J2237/3365 , Y02E60/324
Abstract: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统及其方法。 硼离子注入工艺涉及使用特定浓度范围的B2H6，BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。
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3.发明公开公开(公告)号：US20230313951A1
公开(公告)日：2023-10-05
申请号：US17707292
申请日：2022-03-29
Applicant: Douglas C. Heiderman , Stanley M. Smith , William R. Gerristead
Inventor： Douglas C. Heiderman , Stanley M. Smith , William R. Gerristead
CPC classification number: F17D5/005 , F17C7/00 , F17C13/04 , H01L21/67017 , F17C2201/0104 , F17C2250/043 , F17C2223/036 , F17C2205/0338 , F17C2205/0323 , F17C2221/017 , F17C2270/0518 , F17C2205/0138
Abstract: This invention relates to a method and system for improved gas delivery for regulating gas at a substantially constant delivery pressure on a consistent basis. The system includes an automated redundant pressure regulation safety feature that is specifically configured along a flow network to significantly reduce the occurrence of pressure surges due to failure of the gas to be regulated to the delivery pressure. By reducing the occurrence of pressure surges and utilizing higher pressure package gas sources, the frequency of changeouts can be lowered.
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公开(公告)号：US20190186694A1
公开(公告)日：2019-06-20
申请号：US16213142
申请日：2018-12-07
Applicant: Mayank Pareek , Ashwini K. Sinha , Stanley M. Smith , Ranko Bursac , Amber L. Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A. Marconi, JR.
Inventor： Mayank Pareek , Ashwini K. Sinha , Stanley M. Smith , Ranko Bursac , Amber L. Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A. Marconi, JR.
IPC: F17C7/04 , C23C16/458
CPC classification number: F17C7/04 , C23C16/4581 , F17C1/00 , F17C2260/00
Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.
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5.发明申请BORON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING BORON ION IMPLANTATION 有权含硼含量的组合物，系统及其使用方法，用于提高离子束电流和在硼离子植入过程中的性能公开(公告)号：US20160133427A1
公开(公告)日：2016-05-12
申请号：US14982544
申请日：2015-12-29
Applicant: ASHWINI K. SINHA , STANLEY M. SMITH , DOUGLAS C. HEIDERMAN , SERGE M. CAMPEAU
Inventor： ASHWINI K. SINHA , STANLEY M. SMITH , DOUGLAS C. HEIDERMAN , SERGE M. CAMPEAU
IPC: H01J27/22 , C01B3/00 , H01J37/317
CPC classification number: H01J37/3171 , C01B3/00 , H01J27/22 , H01J37/08 , H01J37/32458 , H01J37/32807 , H01J2237/006 , H01J2237/0473 , H01J2237/08 , H01J2237/0815 , H01J2237/31701 , H01J2237/3365 , Y02E60/324
Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。
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Patent Agency Ranking
公开(公告)号：US6159076A
公开(公告)日：2000-12-12
申请号：US85764
申请日：1998-05-28
Applicant: Li Zhong Sun , Stanley M. Smith , Curtis W. Fouyer
Inventor： Li Zhong Sun , Stanley M. Smith , Curtis W. Fouyer
CPC classification number: C09G1/02
Abstract: A novel slurry for polishing and a method of polishing using a slurry is disclosed. The slurry may include a colloidal silica abrasive in an aqueous solution. The slurry further includes a chelating agent that is believed to remove adsorbed ions from the surface of the layer being polished. The method may be used to polish a surface comprising, for example nickel and the chelating agent may be, for example, ammonium oxalate.
Abstract translation: 公开了一种用于抛光的新型浆料和使用浆料的抛光方法。 浆料可以在水溶液中包括胶体二氧化硅磨料。 浆料还包括螯合剂，其被认为从待抛光层的表面去除吸附的离子。 该方法可以用于抛光包括例如镍的表面，螯合剂可以是例如草酸铵。
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公开(公告)号：US20240124776A1
公开(公告)日：2024-04-18
申请号：US18333838
申请日：2023-06-13
Applicant: Laurence E. Spurgeon , Ashwini K. Sinha , Douglas C. Heiderman , Stanley M. Smith , Oleg Byl
Inventor： Laurence E. Spurgeon , Ashwini K. Sinha , Douglas C. Heiderman , Stanley M. Smith , Oleg Byl
IPC: C09K13/00 , C07F5/06 , F17C5/06 , H01L21/265 , H01L21/3065
CPC classification number: C09K13/00 , C07F5/064 , F17C5/06 , H01L21/265 , H01L21/3065
Abstract: Novel high purity dimethylaluminium chloride compositions are provided that are suitable for semiconductor applications, such as atomic layer etch and aluminum ion implantation. The reduction or minimization of specified gaseous impurities allows the vapor phase of the DMAC to have purity levels of 99.9 mol % or higher to selectively etch various atomic layers with high selectivity and high etch precision at acceptable etch rates and 99 mol % or higher to ion implant aluminum ions without substantial implantation of C2H3 ions into a wafer device, thereby avoiding degradation or failure of the wafer device. Storage conditions are established that are conducive to maintaining the high purity levels required for such semiconductor applications.
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公开(公告)号：US11300249B2
公开(公告)日：2022-04-12
申请号：US16213142
申请日：2018-12-07
Applicant: Mayank Pareek , Ashwini K Sinha , Stanley M Smith , Ranko Bursac , Amber L Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A Marconi, Jr.
Inventor： Mayank Pareek , Ashwini K Sinha , Stanley M Smith , Ranko Bursac , Amber L Boll , Merry Riehm-Constantino , Amy Beth Hangen , Fred A Marconi, Jr.
Abstract: A mobile storage apparatus for containers is provided. The apparatus provides a unique support assembly for holding a container. The assembly includes a latch mechanism that allows a clamp of cylinder to be moved from a closed position to an open position which creates clearance around a neck of cylinder to allow it to rotate without falling out of clamp. The other end of apparatus is structurally configured with a release plunger that can be retracted to allow rotation of cylinder along said other end. Rotatable wheels on a user side with a braking mechanism along a handle and a foot ledge allow improved maneuverability and stability.
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9.发明授权Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation 有权含硼掺杂剂组合物，其用于改善离子束电流的系统和方法以及硼离子注入期间的性能公开(公告)号：US09570271B2
公开(公告)日：2017-02-14
申请号：US14635413
申请日：2015-03-02
Applicant: Ashwini K. Sinha , Stanley M. Smith , Douglas C. Heiderman , Serge M. Campeau
Inventor： Ashwini K. Sinha , Stanley M. Smith , Douglas C. Heiderman , Serge M. Campeau
IPC: H01J37/317 , H01J37/08
CPC classification number: H01J37/3171 , C01B3/00 , H01J27/22 , H01J37/08 , H01J37/32458 , H01J37/32807 , H01J2237/006 , H01J2237/0473 , H01J2237/08 , H01J2237/0815 , H01J2237/31701 , H01J2237/3365 , Y02E60/324
Abstract: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统及其方法。 硼离子注入工艺涉及使用特定浓度范围的B2H6，BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。
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10.发明授权Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation 有权含硼掺杂剂组合物，其用于改善离子束电流的系统和方法以及硼离子注入期间的性能公开(公告)号：US09548181B2
公开(公告)日：2017-01-17
申请号：US14982544
申请日：2015-12-29
Applicant: Ashwini K. Sinha , Stanley M. Smith , Douglas C. Heiderman , Serge M. Campeau
Inventor： Ashwini K. Sinha , Stanley M. Smith , Douglas C. Heiderman , Serge M. Campeau
IPC: H01J37/317 , H01J27/22 , H01J37/08
CPC classification number: H01J37/3171 , C01B3/00 , H01J27/22 , H01J37/08 , H01J37/32458 , H01J37/32807 , H01J2237/006 , H01J2237/0473 , H01J2237/08 , H01J2237/0815 , H01J2237/31701 , H01J2237/3365 , Y02E60/324
Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。
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