公开(公告)号：US20130127019A1

公开(公告)日：2013-05-23

申请号：US13610296

申请日：2012-09-11

申请人： Dosun LEE ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

发明人： Dosun LEE ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

IPC分类号： H01L23/52

CPC分类号： H01L25/0657 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/15311

摘要： A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.

摘要翻译： 半导体器件可以包括半导体衬底，通孔电极和缓冲器。 通孔电极可以通过半导体衬底的厚度延伸穿过半导体衬底的内部的通孔电极，使得半导体衬底的内部部分可以与半导体衬底的外部部分隔离。 缓冲器可以在半导体衬底的内部，其中通孔电极围绕并与缓冲器间隔开。 还讨论了相关方法。

公开(公告)号：US20150137326A1

公开(公告)日：2015-05-21

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu KANG ,  Byung Lyul PARK ,  SungHee KANG ,  TAESEONG KIM ,  TAEYEONG KIM ,  KWANGJIN MOON ,  Jae-Hwa PARK ,  SUKCHUL BANG ,  Seongmin SON ,  JIN HO AN ,  Ho-Jin LEE ,  JEONGGI JIN

发明人： Pil-Kyu KANG ,  Byung Lyul PARK ,  SungHee KANG ,  TAESEONG KIM ,  TAEYEONG KIM ,  KWANGJIN MOON ,  Jae-Hwa PARK ,  SUKCHUL BANG ,  Seongmin SON ,  JIN HO AN ,  Ho-Jin LEE ,  JEONGGI JIN

IPC分类号： H01L23/48 ,  H01L21/311 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

摘要翻译： 半导体器件包括具有彼此相对的顶表面和底表面的半导体衬底，设置在半导体衬底的顶表面上并且包括集成电路的层间介质层，设置在层间介电层上的金属间介电层 并且包括电连接到集成电路的至少一个金属互连，设置在金属间电介质层上的上部电介质层，贯穿金属间介电层的贯通电极，层间绝缘层和半导体基板， 所述通孔电介质层包围所述贯通电极，并且使所述通孔与所述半导体基板电绝缘。 通孔电介质层包括上电介质层和层间电介质层之间的一个或多个气隙。

公开(公告)号：US09847276B2

公开(公告)日：2017-12-19

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

发明人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

IPC分类号： H01L29/40 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

公开(公告)号：US09153559B2

公开(公告)日：2015-10-06

申请号：US13610296

申请日：2012-09-11

申请人： Dosun Lee ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

发明人： Dosun Lee ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

IPC分类号： H01L29/40 ,  H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/15311

摘要： A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.

摘要翻译： 半导体器件可以包括半导体衬底，通孔电极和缓冲器。 通孔电极可以通过半导体衬底的厚度延伸穿过半导体衬底的内部的通孔电极，使得半导体衬底的内部部分可以与半导体衬底的外部部分隔离。 缓冲器可以在半导体衬底的内部，其中通孔电极围绕并与缓冲器间隔开。 还讨论了相关方法。