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    Surface-emitting laser device
    1.
    发明授权
    Surface-emitting laser device 有权
    表面发射激光器件

    公开(公告)号：US07974324B2

    公开(公告)日：2011-07-05

    申请号：US12708665

    申请日：2010-02-19

    申请人： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

    发明人： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

    IPC分类号： H01S5/00

    CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/34313

    摘要： A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.

    摘要翻译： 表面发射激光器件包括：衬底; 具有折射率nL的低折射率层并且设置在基板上; 具有折射率nH的发光层状结构，其中nH> nL，发光层状结构形成在低折射率层上并具有第一和第二半导体层以及多量子阱（MQW），其设置在第一和第二半导体层之间 第二半导体层并且能够产生具有波长λ0的光子; 以及在发光层状结构中形成并具有以晶格常数a布置成周期性图案的光学纳米结构的二维光子晶体（2DPC）。 纳米结构从第一半导体层延伸通过MQW。 2DPC具有归一化频率，其被定义为a /λ0，范围从0.25到0.70。

    SURFACE-EMITTING LASER DEVICE
    2.
    发明申请
    SURFACE-EMITTING LASER DEVICE 有权
    表面发射激光器件

    公开(公告)号：US20110044365A1

    公开(公告)日：2011-02-24

    申请号：US12708665

    申请日：2010-02-19

    申请人： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

    发明人： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

    IPC分类号： H01S5/34 ,  H01S5/323

    CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/34313

    摘要： A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.

    摘要翻译： 表面发射激光器件包括：衬底; 具有折射率nL的低折射率层并且设置在基板上; 具有折射率nH的发光层状结构，其中nH> nL，发光层状结构形成在低折射率层上并具有第一和第二半导体层以及多量子阱（MQW），其设置在第一和第二半导体层之间 第二半导体层并且能够产生具有波长λ0的光子; 以及在发光层状结构中形成并具有以晶格常数a布置成周期性图案的光学纳米结构的二维光子晶体（2DPC）。 纳米结构从第一半导体层延伸通过MQW。 2DPC具有归一化频率，其被定义为a /λ0，范围从0.25到0.70。

    Light-emitting device and method for making the same
    6.
    发明授权
    Light-emitting device and method for making the same 有权
    发光装置及其制造方法

    公开(公告)号：US07888144B2

    公开(公告)日：2011-02-15

    申请号：US11984562

    申请日：2007-11-20

    申请人： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

    发明人： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

    IPC分类号： H01L21/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/44

    摘要： A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

    摘要翻译： 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。

    NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE
    7.
    发明申请
    NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE 审中-公开
    纳米图案和外延结构

    公开(公告)号：US20110024880A1

    公开(公告)日：2011-02-03

    申请号：US12846364

    申请日：2010-07-29

    申请人： Zhen-Yu Li ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Tien-Chang Lu

    发明人： Zhen-Yu Li ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Tien-Chang Lu

    IPC分类号： H01L29/06 ,  H01L21/20

    CPC分类号： H01L33/24 ,  H01L21/02439 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/22

    摘要： A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved.

    摘要翻译： 纳米图案基板在其上表面上包括多个纳米颗粒或纳米柱。 每个纳米颗粒或每个纳米颗粒的高度与直径的比率大于或等于1.特别地，纳米柱的高度与直径之比大于或等于5.每个纳米颗粒 颗粒或每个纳米柱具有弧形顶表面。 当将外延生长工艺施加到纳米图案化衬底上以形成外延层时，外延层具有非常低的缺陷密度。 因此，可以提高制造后续装置的产量。

    Structure of high power edge emission laser diode
    8.
    发明授权
    Structure of high power edge emission laser diode 有权
    高功率边缘发射激光二极管的结构

    公开(公告)号：US07577175B2

    公开(公告)日：2009-08-18

    申请号：US11987431

    申请日：2007-11-30

    申请人： Tien-Chang Lu ,  Chyong-Hua Chen

    发明人： Tien-Chang Lu ,  Chyong-Hua Chen

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/3213 ,  H01S5/343 ,  H01S2301/18

    摘要： A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.

    摘要翻译： 提供了具有啁啾周期性分布的多模延伸子层的高功率边缘发射激光二极管的结构。 近场图案（NFP）是L形，高强度部分与多量子阱很好地重叠。 此外，低强度部分将尽可能地延伸到n型包层。 因此，高功率边缘发射激光二极管的镜面上的光功率密度较低，垂直发散角减小，从而延长其寿命。