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    SEMICONDUCTOR OUTLIER IDENTIFICATION USING SERIALLY-COMBINED DATA TRANSFORM PROCESSING METHODOLOGIES
    9.
    发明申请
    SEMICONDUCTOR OUTLIER IDENTIFICATION USING SERIALLY-COMBINED DATA TRANSFORM PROCESSING METHODOLOGIES 有权
    使用串联组合数据变换处理方法的半导体外延识别

    公开(公告)号：US20110071782A1

    公开(公告)日：2011-03-24

    申请号：US12566387

    申请日：2009-09-24

    申请人： AMIT V. NAHAR ,  JOHN M. CARULLI, JR. ,  KENNETH M. BUTLER ,  THOMAS J. ANDERSON ,  SURESH SUBRAMANIAM

    发明人： AMIT V. NAHAR ,  JOHN M. CARULLI, JR. ,  KENNETH M. BUTLER ,  THOMAS J. ANDERSON ,  SURESH SUBRAMANIAM

    IPC分类号： G06F19/00 ,  G01N37/00 ,  G06F17/18

    CPC分类号： G01R31/31718

    摘要： A method for identifying outlier semiconductor devices from a plurality of semiconductor devices includes performing at least one electrical test to obtain electrical test data including at least one test parameter, applying at least a first data transform processing methodology to the electrical test data to generate processed test data, and applying a second data transform processing methodology that is different from the first data transform processing methodology to process the processed test data. The second data transform processing methodology applies an outlier test limit to identify non-outlier devices that comprise semiconductor devices from the semiconductor devices that conform to the outlier test limit and outlier devices that do not conform to the outlier test limit. The semiconductor devices are dispositioned using the outlier identification results. At least one of the data transform processing methodologies can include statistics.

    摘要翻译： 一种用于从多个半导体器件识别离群半导体器件的方法包括执行至少一个电测试以获得包括至少一个测试参数的电测试数据，对电测试数据应用至少第一数据变换处理方法以产生经处理的测试 数据，以及应用与第一数据变换处理方法不同的第二数据变换处理方法来处理处理的测试数据。 第二数据变换处理方法应用异常值测试极限以识别来自符合离群值测试极限的半导体器件的半导体器件的非离子化器件以及不符合离群值测试极限的异常值器件。 使用异常值识别结果对半导体器件进行配置。 数据变换处理方法中的至少一个可以包括统计。