公开(公告)号：US5885356A

公开(公告)日：1999-03-23

申请号：US577862

申请日：1995-12-22

申请人： Jun Zhao ,  Tom Cho ,  Xin Sheng Guo ,  Atsushi Tabata ,  Jianmin Qiao ,  Alex Schreiber

发明人： Jun Zhao ,  Tom Cho ,  Xin Sheng Guo ,  Atsushi Tabata ,  Jianmin Qiao ,  Alex Schreiber

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00 ,  B44C1/22

CPC分类号： H01J37/32834 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/4586 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S156/916

摘要： The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON.RTM. (polytetrafluoroethylene) screws.

摘要翻译： 本发明提供了一种用于通过用陶瓷材料衬里处理室的排气增压和排气歧管来限制残余物堆积的方法和装置。 在本发明的另一方面，本发明人已经在陶瓷衬垫和处理室壁之间使用气隙来增加陶瓷衬里的介电值，并进一步抑制残留物的积聚。 在另一方面，已经发现陶瓷衬垫保持足够的热量，以便在清洁操作期间消除通常用于加热铝壁的加热器，如果在工艺步骤之后立即开始清洁操作，使得陶瓷保留必要的 来自前一处理步骤的热量。 提供气隙有助于这种加热，从而防止陶瓷热量与铝壁直接接触而被吸走。 在一个优选实施例中，陶瓷衬垫用TEFLON TM（聚四氟乙烯）螺钉连接到室壁。

公开(公告)号：US5853607A

公开(公告)日：1998-12-29

申请号：US540812

申请日：1995-10-11

申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  A62C1/00 ,  A62D1/00

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

公开(公告)号：US5944899A

公开(公告)日：1999-08-31

申请号：US701287

申请日：1996-08-22

申请人： Xin Sheng Guo ,  Virendra V. S. Rana

发明人： Xin Sheng Guo ,  Virendra V. S. Rana

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/3244

摘要： An apparatus and method are provided for an inductively coupled plasma within a reactor for processing semiconductor wafers or workpieces. A gas distribution system having an annular passage formed between the chamber walls and quartz dome uniformly inlet gases over the wafer. The system of the present invention provides an increased etch rate with high selectively and anistropy.

摘要翻译： 提供了用于处理半导体晶片或工件的反应器内的电感耦合等离子体的装置和方法。 一种气体分配系统，其具有形成在室壁之间的环形通道和晶片上的石英圆顶均匀的入口气体。 本发明的系统提供了具有高选择性和均匀性的增加的蚀刻速率。

公开(公告)号：US06374512B1

公开(公告)日：2002-04-23

申请号：US09631051

申请日：2000-08-01

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： F26B308

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背面和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US6050506A

公开(公告)日：2000-04-18

申请号：US23437

申请日：1998-02-13

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C16/44 ,  C23C16/455 ,  B05B1/14

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of metals. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduce flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中分散气体在晶片上的喷头，特别是用于金属CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下可以消除喷头表面背面的第二个穿孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减少流阻抗对于铜的CVD特别有用。

公开(公告)号：US06410089B1

公开(公告)日：2002-06-25

申请号：US09513723

申请日：2000-02-24

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C1680

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中在晶片上分配气体的喷头，特别是使用诸如HFAC-Cu-TMVS的前体的热处理中的CVD CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下，可以消除喷头表面背面的第二多孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减小的流阻抗对于铜的CVD是特别有用的。

公开(公告)号：US06096135A

公开(公告)日：2000-08-01

申请号：US120005

申请日：1998-07-21

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  H01L21/205 ,  H01L21/68 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背侧和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US06296712B1

公开(公告)日：2001-10-02

申请号：US09055689

申请日：1998-04-06

申请人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

发明人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/68735

摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

摘要翻译： 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

公开(公告)号：US5403459A

公开(公告)日：1995-04-04

申请号：US63478

申请日：1993-05-17

申请人： Xin Sheng Guo

发明人： Xin Sheng Guo

IPC分类号： C23C14/00 ,  C23C14/34 ,  C23C14/56 ,  H01L21/203

CPC分类号： C23C14/345 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32862 ,  H01J37/3447

摘要： When a collimator is employed between the target and a substrate support in a physical vapor deposition chamber, since the collimator is grounded to the chamber walls, the chamber becomes divided electrically, because the collimator acts as a barrier to the passage of the plasma. Thus a two step plasma cleaning process must be performed to remove native oxide and sputtered deposits on parts of the chamber, particularly when parts of the chamber are replaced or removed. The first plasma clean step is conventional and cleans the upper portion of the chamber including the upper surface of the collimator. A positive bias source is then connected to the substrate support and a second cleaning plasma generated between the collimator and the support which cleans the parts of the chamber below the collimator, including the bottom surface of the collimator.

摘要翻译： 当在物理气相沉积室中的目标和基板支撑件之间采用准直器时，由于准直器被接地到室壁，所以室由于准直器作为等离子体通过的屏障而变得电气分开。 因此，必须执行两步等离子体清洁工艺，以去除腔室部分上的天然氧化物和溅射沉积物，特别是当腔室的部分被更换或移除时。 第一等离子体清洁步骤是常规的，并且清洁包括准直器的上表面的室的上部。 然后将正偏压源连接到基板支撑件，以及在准直器和支撑件之间产生的第二清洁等离子体，其清洁准直器下方的包括准直仪底面的腔室部分。

公开(公告)号：US06251759B1

公开(公告)日：2001-06-26

申请号：US09165661

申请日：1998-10-03

申请人： Xin Sheng Guo ,  John V. Schmitt ,  Shih-Hung Li

发明人： Xin Sheng Guo ,  John V. Schmitt ,  Shih-Hung Li

IPC分类号： H01L2120

CPC分类号： H01L21/67167 ,  H01L21/67184 ,  H01L21/67207

摘要： An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber is adapted to deposit a material upon a wafer. Specifically, the transition chamber provides a flash coating of PVD copper on the wafer which significantly improves the adhesion of subsequently CVD deposited bulk copper without sacrifice in the throughput of the cluster tool.

摘要翻译： 材料沉积在多腔半导体处理簇工具中的改进，其包括第一簇第一腔室，第二第二腔室群和位于第一簇和第二簇之间的过渡室，其中过渡室适于 将材料沉积在晶片上。 具体来说，过渡室在晶片上提供PVD铜的闪光涂层，其显着地改善随后的CVD沉积的大块铜的粘附，而不牺牲集群工具的生产量。