Inverter circuit
    1.
    发明授权
    Inverter circuit 有权
    逆变电路

    公开(公告)号:US07924064B2

    公开(公告)日:2011-04-12

    申请号:US12076580

    申请日:2008-03-20

    IPC分类号: H03B1/00

    摘要: An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

    摘要翻译: 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。

    Inverter circuit
    2.
    发明申请
    Inverter circuit 有权
    逆变电路

    公开(公告)号:US20090180228A1

    公开(公告)日:2009-07-16

    申请号:US12076580

    申请日:2008-03-20

    IPC分类号: H02H9/04

    摘要: An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

    摘要翻译: 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。

    Inverter citcuit
    5.
    发明申请
    Inverter citcuit 失效
    逆变器citcuit

    公开(公告)号:US20080211547A1

    公开(公告)日:2008-09-04

    申请号:US12076575

    申请日:2008-03-20

    IPC分类号: H03B1/00

    摘要: An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

    摘要翻译: 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。

    Inverter circuit
    6.
    发明授权
    Inverter circuit 失效
    逆变电路

    公开(公告)号:US07683678B2

    公开(公告)日:2010-03-23

    申请号:US12076575

    申请日:2008-03-20

    IPC分类号: H03B1/00 H03K3/00

    摘要: An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

    摘要翻译: 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。

    Inverter circuit
    7.
    发明申请
    Inverter circuit 审中-公开
    逆变电路

    公开(公告)号:US20050116744A1

    公开(公告)日:2005-06-02

    申请号:US10898364

    申请日:2004-07-26

    摘要: An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).

    摘要翻译: 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。

    Power semiconductor device
    9.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号:US09106156B2

    公开(公告)日:2015-08-11

    申请号:US13677028

    申请日:2012-11-14

    IPC分类号: H02M1/088 H02M7/537 H02M7/00

    摘要: Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.

    摘要翻译: 在第一IGBT和第一MOSFET中,布置在第一栅极控制电路附近的晶体管通过其栅极将从第一栅极控制电路提供的栅极控制信号提供给布置在离第一栅极控制器更远的位置处的晶体管的栅极 电路。 在第二IGBT和第二MOSFET中,布置在第二栅极控制电路附近的晶体管通过其栅极将从第二栅极控制电路提供的栅极控制信号提供给布置在距离第二栅极控制器更远的位置处的晶体管的栅极 电路。