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公开(公告)号：US20120321244A1
公开(公告)日：2012-12-20
申请号：US13490806
申请日：2012-06-07
CPC分类号： H01S5/1014 , G02B6/1228 , G02B6/305 , G02B2006/12176 , H01S5/026 , H01S5/06256 , H01S5/1032 , H01S5/2275 , H01S5/3054
摘要： The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.
摘要翻译： 光半导体器件包括形成在半导体衬底上的点尺寸转换器。 点尺寸转换器具有包括光过渡区域的多层结构。 多层结构包括下芯层和具有比下芯层的折射率高的折射率的上芯层。 上层芯层的宽度逐渐减小，下芯层的宽度在光过渡区域逐渐增加。 多层结构的两侧和上侧在光过渡区域被半绝缘半导体层掩埋。 从点尺寸转换器的一个端部入射的光被传播到上芯层。 光在光过渡区域中从上芯层转移到下芯层，被传播到下芯层，并从其另一端部出射。
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2.发明申请Semiconductor laser diode and integrated semiconductor optical waveguide device 有权半导体激光二极管和集成半导体光波导器件公开(公告)号：US20070195847A1
公开(公告)日：2007-08-23
申请号：US11703159
申请日：2007-02-07
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/1014 , H01S5/12 , H01S5/2004 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S2301/173
摘要： A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.
摘要翻译： 常规的半导体激光二极管在恒定的工作电流下的光功率小，并且在与光学器件集成时限制了脊宽度，这迫使通过降低原始特性来执行集成，并且难以降低成本和功耗。 在半导体激光二极管中，通过降低脊与其它成分之间的折射率差，可以扩大脊宽度，通过沿着两侧的大致垂直的槽形成扩散电流和折射率差的增加来防止 并且通过在脊上形成衍射光栅来防止由于再生长导致的特性劣化。 半导体激光二极管与诸如电吸收型光学调制器的光学装置集成，而不增加生长周期，并且通过使用锥形波导不限制脊宽度。
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3.发明申请Manufacturing method of semiconductor device and semiconductor manufacturing apparatus 审中-公开半导体器件和半导体制造装置的制造方法公开(公告)号：US20050287813A1
公开(公告)日：2005-12-29
申请号：US10929778
申请日：2004-08-31
CPC分类号： H01L21/02046 , H01L21/02063 , H01L21/02071 , H01L21/67161 , H01L21/67167 , H01L21/67207
摘要： An apparatus for decreasing plasma-induced damage caused by exposure to plasma is provided in an apparatus for manufacturing semiconductor devices using plasma. An apparatus is used for irradiating the semiconductor surface with as least one of X-rays and UV-rays in a vacuum or in an inert atmosphere after plasma processing.
摘要翻译： 在使用等离子体制造半导体器件的装置中提供了用于降低由暴露于等离子体引起的等离子体引起的损伤的装置。 在等离子体处理之后，使用在真空或惰性气氛中的X射线和紫外线中的至少一种照射半导体表面的装置。
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公开(公告)号：US08837884B2
公开(公告)日：2014-09-16
申请号：US13490806
申请日：2012-06-07
IPC分类号： G02B6/26 , G02B6/42 , H01S5/10 , G02B6/30 , G02B6/122 , H01S5/0625 , H01S5/227 , H01S5/026 , H01S5/30 , G02B6/12
CPC分类号： H01S5/1014 , G02B6/1228 , G02B6/305 , G02B2006/12176 , H01S5/026 , H01S5/06256 , H01S5/1032 , H01S5/2275 , H01S5/3054
摘要： The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.
摘要翻译： 光半导体器件包括形成在半导体衬底上的点尺寸转换器。 点尺寸转换器具有包括光过渡区域的多层结构。 多层结构包括下芯层和具有比下芯层的折射率高的折射率的上芯层。 上层芯层的宽度逐渐减小，下芯层的宽度在光过渡区域逐渐增加。 多层结构的两侧和上侧在光过渡区域被半绝缘半导体层掩埋。 从点尺寸转换器的一个端部入射的光被传播到上芯层。 光在光过渡区域中从上芯层转移到下芯层，被传播到下芯层，并从其另一端部出射。
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公开(公告)号：US20100111126A1
公开(公告)日：2010-05-06
申请号：US12608346
申请日：2009-10-29
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , H01S5/028 , H01S5/162 , H01S5/20 , H01S5/3211 , H01S2301/173 , H01S2301/176
摘要： In a horizontal-cavity vertical-emitting semiconductor laser including an Al-containing semiconductor layer, deterioration of light output property due to oxidization of the Al-containing semiconductor layer is suppressed. A lower cladding layer, an active layer, and an upper cladding layer are stacked in this order from the lower layer on a main surface of a substrate made of GaAs. The upper cladding layer is made of AlGaAs or AlGaInP containing Al in high concentration. An emitting plane layer combining a function of preventing the oxidization of Al contained in the upper cladding layer is formed on an upper portion of the upper cladding layer, and an electric contact layer is formed on an upper portion of the emitting plane layer. The emitting plane layer is made of InGaP, and the electric contact layer is made of GaAs.
摘要翻译： 在包含含Al半导体层的水平腔垂直发射半导体激光器中，抑制了由于含Al半导体层的氧化引起的光输出特性的劣化。 从GaAs的衬底的主表面上的下层依次堆叠下包层，有源层和上覆层。 上覆层由含有高浓度Al的AlGaAs或AlGaInP构成。 在上部包层的上部形成有结合防止上部包层中的Al的氧化的功能的发光面层，在发光面层的上部形成有电接触层。 发光平面层由InGaP制成，电接触层由GaAs制成。
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6.发明授权Semiconductor laser diode and integrated semiconductor optical waveguide device 有权半导体激光二极管和集成半导体光波导器件公开(公告)号：US07463663B2
公开(公告)日：2008-12-09
申请号：US11703159
申请日：2007-02-07
IPC分类号： H01S5/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/1014 , H01S5/12 , H01S5/2004 , H01S5/22 , H01S5/2213 , H01S5/2214 , H01S5/2216 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S2301/173
摘要： A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.
摘要翻译： 常规的半导体激光二极管在恒定的工作电流下的光功率小，并且在与光学器件集成时限制了脊宽度，这迫使通过降低原始特性来执行集成，并且难以降低成本和功耗。 在半导体激光二极管中，通过降低脊与其它成分之间的折射率差，可以扩大脊宽度，通过沿着两侧的大致垂直的槽形成扩散电流和折射率差的增加来防止 并且通过在脊上形成衍射光栅来防止由于再生长导致的特性劣化。 半导体激光二极管与诸如电吸收型光学调制器的光学装置集成，而不增加生长周期，并且通过使用锥形波导不限制脊宽度。
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