摘要:
According to an aspect of the invention, there is provided a method of fabricating a semiconductor device including, heating a semiconductor component including a first solder bump, pressing the first solder bump onto a stage having asperity, coating a flux on the first solder bump, heating a substrate including a second solder bump, pressing the second solder bump onto the stage having asperity, coating the flux on the second solder bump, contacting the first solder bump on the second solder bump by disposing the semiconductor component on the substrate, and coupling the first solder bump and the second solder bump by heating the semiconductor component and the substrate.
摘要:
An IC chip and overhang portions are stuck to tape by an adhesive agent layer having elasticity. A plurality of solder balls are attached to the tape. By soldering the solder balls to a printed board, a semiconductor device is mounted. In the case where a temperature cycle has been caused, thermal stress occurs between the IC chip and the printed board or between the hangover portion and the printed board because of a difference in coefficient of thermal expansion between the IC chip or the hangover portion and the printed board. However, this thermal stress is absorbed by the elasticity of the adhesive agent layer. As a result, little thermal stress is applied to solder balls. Even if the above described temperature cycle is repeated, therefore, the solder balls are electrically connected to the printed board stably over a long period of time. In addition, the area of the tape is widened by the area of the hangover portions. Accordingly, a larger number of solder balls can be attached to the tape without reducing the size of each of the solder balls.