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1.发明授权公开(公告)号：US06744074B2
公开(公告)日：2004-06-01
申请号：US09968802
申请日：2001-10-03
IPC分类号： H01L3300
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译： 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为λ（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。
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公开(公告)号：US06677618B1
公开(公告)日：2004-01-13
申请号：US09453279
申请日：1999-12-03
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/30 , H01S5/0282
摘要： Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
摘要翻译： 公开的化合物半导体发光器件具有形成在基板上的基板，化合物半导体层，其包含第一导电型覆盖层，有源层和第二导电型覆盖层，以及由两个相对的面 化合物半导体层，其中形成化合物半导体的面的第一导电型覆盖层，有源层和第二导电型覆盖层的表面被钝化层覆盖，其中至少一个元件构成 化合物半导体层不与氧结合，并且其中与化合物半导体层的小面相邻的钝化层的一部分含有氧作为结构元素。 根据本发明的化合物半导体发光器件可以长期稳定地抑制在外在原因上产生的面上的表面状态密度，并且是具有高输出和长寿命两者的高性能器件。
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3.发明授权公开(公告)号：US06323052B1
公开(公告)日：2001-11-27
申请号：US09095884
申请日：1998-06-11
IPC分类号： H01L2100
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译： 即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。 发光波长为兰姆（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而 形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆 具有钝化层。
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4.发明授权Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode 失效在半导体激光二极管和半导体激光二极管中形成沟槽的方法
公开(公告)号：US5920767A
公开(公告)日：1999-07-06
申请号：US681017
申请日：1996-07-22
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/209 , H01S5/2206 , H01S5/2209 , H01S5/2275
摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
摘要翻译： 本发明描述了一种在半导体激光二极管的结构中形成凹槽的方法，其包括包含MP的芯层的外延生长的晶体生长过程，其中M表示属于周期表第IIIb族的元素中的一种或多种， 包含MAs的上层，其中M表示属于元素周期表IIIb族的元素中的一种或多种，在包含MA的下层中的MAs晶体的（100）表面上依次连续; 在上层形成蚀刻掩模之后，在蚀刻掩模上形成蚀刻窗口的光刻和湿蚀刻步骤; 选择性蚀刻上层的第一蚀刻步骤; 以及除了芯层中的MP晶体的（111）面露出的面以外的其它面的选择性蚀刻的第二蚀刻工序。
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公开(公告)号：US06172998B2
公开(公告)日：2001-01-09
申请号：US08971719
申请日：1997-11-17
申请人： Hideyoshi Horie , Toshinari Fujimori , Satoru Nagao , Hideki Goto
发明人： Hideyoshi Horie , Toshinari Fujimori , Satoru Nagao , Hideki Goto
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/204 , H01S5/222 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.
摘要翻译： 本发明涉及包括GaAs衬底和至少第一导电型覆盖层的半导体激光二极管，包含In，Ga和As作为元件的有源层，第二导电型第一覆盖层，电流阻挡层 和第二导电型第二包覆层，其顺序淀积在所述衬底上，其中由所述电流阻挡层和所述第二导电型第二覆盖层形成电流注入区域，在水平方向上的有效折射率梯度DELTAneff 在发射波长处为2.5×10 -3〜5.0×10 -3，电流注入区域的宽度W为1.5〜2.5μm。 本发明的半导体激光二极管适用于需要高输出和长使用寿命的用途，例如用于光纤放大器的激发光源。
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6.发明授权
公开(公告)号：US5566198A
公开(公告)日：1996-10-15
申请号：US380836
申请日：1995-01-30
CPC分类号： H01L33/0062 , H01S5/2231 , H01S5/209 , H01S5/2206 , H01S5/2209 , H01S5/2275
摘要： The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
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公开(公告)号：US20060038185A1
公开(公告)日：2006-02-23
申请号：US11253547
申请日：2005-10-20
IPC分类号： H01L33/00
CPC分类号： H01L33/0045 , H01S5/16 , H01S5/2018 , H01S5/2027 , H01S5/2231 , H01S5/3202 , H01S5/3211 , H01S2301/173
摘要： A light emitting device including a substrate transparent at the emission wavelength and an active layer structure formed on such substrate, in which the thickness of the substrate is 75 μm or less, and/or a layer for suppressing spectral-intensity-modulation due to the substrate-mode is provided between the substrate and the active layer structure. Such device can suppress the spectral-intensity-modulation due to the substrate-mode, which is observed for the case the substrate is transparent at the emission wavelength, to thereby provide a light emission device excellent in linearity of the current-light output characteristics, and to thereby improve the coupling characteristics with an external cavity.
摘要翻译： 一种发光器件，其包括在发射波长处透明的衬底和形成在该衬底上的有源层结构，其中衬底的厚度为75μm或更小，和/或用于抑制由于衬底的光谱强度调制而导致的层 衬底模式设置在衬底和有源层结构之间。 这样的装置可以抑制由于基板在发光波长下透明的情况下的基板模式导致的光谱强度调制，从而提供当前光输出特性的线性优异的发光装置， 从而提高与外部空腔的耦合特性。
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公开(公告)号：US5838028A
公开(公告)日：1998-11-17
申请号：US861640
申请日：1997-05-22
IPC分类号： H01L21/306 , H01L33/02 , H01L33/14 , H01L33/30 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/32 , H01S5/323 , H01S3/19 , H01L31/0336 , H01L31/072 , H01L31/038
CPC分类号： H01S5/2231 , H01L21/30612 , H01L33/02 , H01L33/145 , H01L33/30 , H01S5/204 , H01S5/209 , H01S5/222 , H01S5/2275 , H01S5/3211 , H01S5/32316
摘要： The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.
摘要翻译： 本发明提供了一种半导体器件，其结构是将至少包含AlWGa1-WAs的层形成在衬底上，并且第二蚀刻停止层，第一蚀刻停止层和包含AlYGa1-YAs的层沉积在包含AlWGa1-WAs的层上， 所述顺序的WAs，其中包含AlYG1-YAs的层的一部分和第一蚀刻停止层的一部分被去除。 该结构能够以良好的质量制造所需的脊形，并允许自由选择待蚀刻层的Al混晶比，并且可以形成GaAs的再生长界面。 因此，可以提高再生长部分的晶体的质量。
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9.发明授权Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element 有权氮化物半导体，氮化物半导体晶体生长方法和氮化物半导体发光元件公开(公告)号：US08652948B2
公开(公告)日：2014-02-18
申请号：US12744163
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/16
摘要： During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
摘要翻译： 在氮化物半导体层生长之前，在非极性面状氮化物衬底（例如m面）上生长氮化物半导体晶体的过程中，在加热到较高温度范围的过程中构成主流的气体， （暴露基板的主氮化物面的气氛）和构成主流的气体直到第一和第二氮化物半导体层的生长完成（衬底的主氮化物面露出的气氛）为止 主要是那些不会对氮化物具有蚀刻效果的那些，而在氮化物半导体层的生长开始时不提供Si源。 因此，氮原子不会从外延衬底的氮化物表面附近脱附，从而抑制了向外延膜的缺陷的引入。 这也使得外延生长可能具有优异的平坦度的表面形态。
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公开(公告)号：US07977682B2
公开(公告)日：2011-07-12
申请号：US12278798
申请日：2007-01-26
申请人： Hideyoshi Horie
发明人： Hideyoshi Horie
IPC分类号： H01L33/00
摘要： Provided is a compound light emitting device which facilitates easy connection of power supply lines, and has a high emission intensity in-plane uniformity. The light emitting device includes a first-conduction-type cladding layer, active layer structure, and second-conduction-type cladding layer each containing a III-V compound semiconductor. The first-conduction-type cladding layer and second-conduction-type cladding layer sandwich the active layer structure. The light emitting device includes a first-conduction-type-side electrode (7) for injecting carriers into the first-conduction-type cladding layer, and a second-conduction-type-side electrode (6) for injecting carriers into the second-conduction-type cladding layer. The first-conduction-type-side electrode (7) has an opening (7p). The second-conduction-type-side electrode (6) has a main-electrode-portion (6-0) partially surrounded by the first-conduction-type-side electrode (7), and extracting portions (6-1, 6-2) for extracting the main-electrode-portion (6-0) outside the first-conduction-type-side electrode (7) though the opening (7p). The main-electrode-portion (6-0) is a part of a constant-width figure. The interval between the outer edge of the main-electrode-portion (6-0) and the inner edge of the first-conduction-type-side electrode (7) is almost constant.
摘要翻译： 提供了一种便于连接电源线并具有高发射强度的面内均匀性的复合发光装置。 发光器件包括每个含有III-V族化合物半导体的第一导电型包覆层，有源层结构和第二导电型包覆层。 第一导电型包层和第二导电型包层夹着有源层结构。 发光器件包括用于将载流子注入到第一导电型包层中的第一导电型侧电极（7）和用于将载流子注入第二导电型包层的第二导电型侧电极（6） 导电型包覆层。 第一导电型侧电极（7）具有开口部（7p）。 第二导电型侧电极（6）具有由第一导电型侧电极（7）部分地包围的主电极部（6-0），提取部（6-1,6〜 2），用于通过开口（7p）提取第一导电型侧电极（7）外部的主电极部分（6-0）。 主电极部分（6-0）是恒定宽度图的一部分。 主电极部分（6-0）的外边缘与第一导电型侧电极（7）的内边缘之间的间隔几乎恒定。
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