公开(公告)号：US5868834A

公开(公告)日：1999-02-09

申请号：US876228

申请日：1997-06-16

申请人： Kenji Shimoyama ,  Toshinari Fujimori ,  Hideki Goto

发明人： Kenji Shimoyama ,  Toshinari Fujimori ,  Hideki Goto

IPC分类号： C30B25/00 ,  C30B25/02 ,  H01L21/36 ,  H01L21/365 ,  H01S5/347

CPC分类号： B82Y20/00 ,  C23C16/306 ,  C23C16/45527 ,  C30B25/165 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/0262 ,  H01S5/347 ,  H01L21/02507 ,  H01S2304/04 ,  H01S5/3018

摘要： The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.

摘要翻译： 本公开内容描述了使用II族元素的有机金属化合物和VI族元素的氢化物或有机金属化合物作为原料，通过气相外延制备II-VI族化合物半导体薄膜的方法，其包括 重复交替引入第II族元素和卤化物气体的有机金属化合物，卤素气体或其混合物; 或将卤化物气体，卤素气体或其混合物添加到用于气相外延的气体中。

公开(公告)号：US5608751A

公开(公告)日：1997-03-04

申请号：US209963

申请日：1994-03-14

申请人： Kenji Shimoyama ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Gotoh

发明人： Kenji Shimoyama ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Gotoh

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/0211 ,  H01S5/2207 ,  H01S5/221 ,  H01S5/222 ,  H01S5/32325

摘要： The disclosure describes a laser diode comprising a Group III-V compound single-crystal substrate of first conduction type; a first cladding layer of first conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said single-crystal substrate; an active layer composed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.0.5 and 0.3.ltoreq.y.ltoreq.0.75) and formed on said first cladding layer; a second cladding layer of second conduction type composed of (Al.sub.m Ga.sub.1-m).sub.n In.sub.1-n P (0.3.ltoreq.m.ltoreq.1 and 0.3.ltoreq.n.ltoreq.0.75) and formed on said active layer and having a ridge; and a current blocking layer composed of Al.sub.u Ga.sub.1-u As.sub.v P.sub.1-v, (0.ltoreq.u.ltoreq.1 and 0.ltoreq.v.ltoreq.1) and so formed as to contact the lateral side of the ridge of said second cladding layer,(1) each refractive index of the first and second cladding layers being smaller than that of the active layer and (2) the refractive index of the current blocking layer being smaller than that of the second cladding layer.

摘要翻译： 本公开描述了一种包括第一导电类型的III-V族化合物单晶衬底的激光二极管; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）组成的第一导电类型的第一包层，形成在所述单晶衬底上; 形成在所述第一包层上的由（Al x Ga 1-x）y In 1-y P（0≤x≤0.5,0.3≤y≤0.75）组成的有源层; 由（AlmGa1-m）nIn1-nP（0.3≤n≤1,0.3≤n≤0.75）构成并形成在所述有源层上并具有脊的第二导电类型的第二包层; 和由AluGa1-uAsvP1-v组成的电流阻挡层，其形成为接触所述第二包层的脊的横向侧面 层，（1）第一和第二包覆层的每个折射率小于有源层的折射率，和（2）电流阻挡层的折射率小于第二覆层的折射率。

公开(公告)号：US06639926B1

公开(公告)日：2003-10-28

申请号：US09274767

申请日：1999-03-24

申请人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

发明人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0658 ,  H01S5/2231 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/34326

摘要： A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.

摘要翻译： 一种半导体发光器件，包括具有与低度表面取向的结晶面偏离的表面的基板，所述基板上具有：包含有源层的化合物半导体层; 在所述化合物半导体层上形成的选择性生长保护膜，并且在与注入电流的条纹区域对应的区域具有开口部; 以及形成为覆盖开口的脊状化合物半导体层。 这种具有稳定的激光特性的半导体发光器件可以简单地制造。

公开(公告)号：US5355384A

公开(公告)日：1994-10-11

申请号：US128579

申请日：1993-09-29

申请人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

发明人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

IPC分类号： H01S5/00 ,  H01S3/11 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2081 ,  H01S5/223 ,  H01S5/2275

摘要： Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.

摘要翻译： 本发明公开了一种半导体激光器元件，其包括在半导体基板上以该顺序或相反次序设置的第一包层，光导层，有源层和第二包层，光导层的折射率大于 第一和第二包覆层的折射率以及光导层的折射率都小于有源层的折射率，但是比第一覆盖层的折射率大，但是比第一覆盖层的折射率小的折射率的掩埋层， 第一和第二包层中的至少一个设置在除了光导层和有源层的激光发射面以外的侧面上。

公开(公告)号：US6023483A

公开(公告)日：2000-02-08

申请号：US48183

申请日：1998-03-26

申请人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

发明人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/223

摘要： A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

摘要翻译： 一种半导体发光器件，包括其上具有的衬底：第一导电型第一覆盖层; 活性层 第二导电型第一包层，其具有注入电流的条带区域和剩余区域; 脊部，包括：形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜，其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上，或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积，或者其中所述脊部在其侧表面上没有保护层。

公开(公告)号：US5606180A

公开(公告)日：1997-02-25

申请号：US299994

申请日：1994-09-01

申请人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

发明人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

IPC分类号： C30B25/02 ,  H01L29/205 ,  H01L33/30 ,  H01S5/323 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/30 ,  C30B25/02 ,  C30B29/40 ,  H01L29/205 ,  H01S5/32325

摘要： The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5

摘要翻译： 本发明包括III-V族化合物半导体，其包括（1）AlIIIAswP1-w的薄晶膜，其中AlIII表示Al组成小于0.3，0.5 的III族元素 在基板上，形成BIIIAs的薄晶膜，其中BIII表示在A2IIIAsuP1-u膜上形成的Al组成不小于0.45的III族元素，以及C2IIIAszP1-z的薄膜，其中C2III表示III族 元素，0 ，形成在BIIIAs膜上。

公开(公告)号：US5622559A

公开(公告)日：1997-04-22

申请号：US69728

申请日：1993-06-01

申请人： Hideki Goto ,  Katsushi Fujii ,  Kenji Shimoyama

发明人： Hideki Goto ,  Katsushi Fujii ,  Kenji Shimoyama

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  C30B25/00

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

摘要： The vapor phase growth method of the group III-V compound semiconductor thin-film, using hydrides and organic metals containing no halogen elements as a raw material for the growth, is disclosed. The method is carried out by alternately introducing group III organic metals raw material gas as well as halides gas and/or halogens gas into a growth chamber, and also by repeating the introducing to grow a thin-film. In accordance with the present invention, it is possible to obtain such high-quality crystal growth as the planarization of hetero junction interface, the improvement of surface morphology or facet, and no deposit of polycrystals on the mask in a wide range.

摘要翻译： 公开了使用不含卤素元素的氢化物和有机金属作为生长原料的III-V族化合物半导体薄膜的气相生长方法。 该方法通过将III族有机金属原料气体以及卤化物气体和/或卤素气体交替地引入生长室中，并且还通过重复引入以生长薄膜来进行。 根据本发明，可以获得如异质结界面的平面化，表面形态或小面的改善以及在宽范围内在掩模上沉积多晶体的高质量晶体生长。

公开(公告)号：US5400740A

公开(公告)日：1995-03-28

申请号：US069729

申请日：1993-06-01

申请人： Hideki Goto ,  Kenji Shimoyama

发明人： Hideki Goto ,  Kenji Shimoyama

IPC分类号： H01L21/205 ,  H01L21/306 ,  H01L21/20

CPC分类号： H01L21/02019 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30621

摘要： A method of preparing a compound semiconductor is carried out, by introducing the group III organic metals gas and/or the hydrides containing group V elements, or group V organic metals gas into a growth chamber, in addition to a carrier gas and an etching gas, in a method of preparing a group III-V compound semiconductor including the process to effect the gas etching of a single crystal sustrate surface and/or a single crystal thin-film surface in the growth chamber, just before a vapor phase growth of a compound semiconductor thin-film is performed, using the hydrides and the organic metals gas.According to the present invention, the impurity pollution, the oxide film, the thermometamorphism and the hike, in an interface between the single crystal substrate and the epitaxial layer as well as in the regrown interface can be removed, thereby making it possible to get a clean surface of the interface and to restrain the accumulation or the depletion of carrier-concentration which has not been intended. As a result, the quality of the device can be greatly improved as compared with that of the one obtained by a usual preparing method.

摘要翻译： 通过将III族有机金属气体和/或含有V族元素的氢化物或V族有机金属气体引入生长室，除了载气和蚀刻气体之外，还可以进行化合物半导体的制备方法 在制备III-V族化合物半导体的方法中，包括在生长室内的单晶生长表面和/或单晶薄膜表面进行气相蚀刻的工艺，恰好在气相生长之前 使用氢化物​​和有机金属气体进行化合物半导体薄膜。 根据本发明，可以除去单晶衬底和外延层之间以及再生界面中的界面中的杂质污染，氧化膜，热变质作用和高温变形，从而可以获得 清洁界面的表面，并抑制未预期的载流子浓度的累积或耗尽。 结果，与通过通常的制备方法获得的装置相比，可以大大提高装置的质量。

公开(公告)号：US06807213B1

公开(公告)日：2004-10-19

申请号：US09511188

申请日：2000-02-23

申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Kazumasa Kiyomi ,  Yoshihito Sato ,  Satosi Kikuchi

发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Kazumasa Kiyomi ,  Yoshihito Sato ,  Satosi Kikuchi

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01L33/02 ,  H01L33/24 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/50 ,  H01S2301/18

摘要： This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (WC) at an opening center of the stripe-shaped opening is different from either or both of a width (WF) of the opening front end and a width (WR) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

摘要翻译： 本申请公开了一种半导体光学器件装置，在至少具有含有活性层的化合物半导体层，在化合物半导体层上形成有条状开口的保护膜，以及形成为 为了覆盖具有比有源层的折射率小的折射率的条形开口，具有条形开口的开口中心处的宽度（WC）不同于宽度（ WF）和开口后端的宽度（WR）。 根据本发明，可以制造能够适当地控制条形开口的宽度的能够以高输出操作的半导体光学装置装置和具有小的光斑直径的半导体光学装置装置等。

公开(公告)号：US5619518A

公开(公告)日：1997-04-08

申请号：US363261

申请日：1994-12-23

申请人： Hideyoshi Horie ,  Yuichi Inoue ,  Kenji Shimoyama ,  Nobuyuki Hosoi ,  Goto Hideki

发明人： Hideyoshi Horie ,  Yuichi Inoue ,  Kenji Shimoyama ,  Nobuyuki Hosoi ,  Goto Hideki

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/3216

摘要： The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, anda buried layer for current blocking disposed at both sides in the cavity direction of the active layer,at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations.na>nc1 (1)na>nc2 (2)

摘要翻译： 本公开描述了一种半导体激光二极管，其包括至少第一覆盖层，有源层和第二覆盖层，其依次布置在衬底上，以及用于电流阻挡的掩埋层，设置在有源层的空腔方向的两侧 所述第一覆盖层和所述第二覆盖层中的至少一个在与所述基板平行的方向上具有至少一个超晶格，并且所述第一覆盖层的平均折射率（nc1），所述有源层的折射率（na） 和第二包层的平均折射率（nc2）满足以下等式。 na> nc1（1）na> nc2（2）