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    OPTICAL PASSIVATION FILM, METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL
    3.
    发明申请
    OPTICAL PASSIVATION FILM, METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL 审中-公开
    光学钝化膜，其制造方法和太阳能电池

    公开(公告)号：US20130125961A1

    公开(公告)日：2013-05-23

    申请号：US13459250

    申请日：2012-04-30

    Applicant: Wen-Ching Sun ,  Sheng-Min Yu ,  Tai-Jui Wang ,  Chia-Liang Sun ,  Tzer-Shen Lin

    Inventor： Wen-Ching Sun ,  Sheng-Min Yu ,  Tai-Jui Wang ,  Chia-Liang Sun ,  Tzer-Shen Lin

    IPC: H01L31/02 ,  C09D1/00 ,  B05D5/06

    CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  Y02E10/547

    Abstract: An optical passivation film includes Tii-xAlxOy:Z, where Z represents a halogen, x is from 0.05 to 0.95, and y is greater than 0. A method for manufacturing the optical passivation film includes preparing a spray solution including an aluminium oxide precursor, a titanium oxide precursor, a halogen solution and a solvent. A substrate is disposed on a heating device to heat the substrate. The spray solution is sprayed on the substrate to form the optical passivation film. A solar cell having the optical passivation film is also provided.

    Abstract translation: 光学钝化膜包括Tii-xAl x O y：Z，其中Z表示卤素，x为0.05至0.95，y大于0.光学钝化膜的制造方法包括制备包含氧化铝前体的喷雾溶液， 氧化钛前体，卤素溶液和溶剂。 将基板设置在加热装置上以加热基板。 将喷雾溶液喷涂在基材上以形成光学钝化膜。 还提供了具有光学钝化膜的太阳能电池。

    BIFACIAL SOLAR CELL
    7.
    发明申请
    BIFACIAL SOLAR CELL 审中-公开
    双极太阳能电池

    公开(公告)号：US20110139250A1

    公开(公告)日：2011-06-16

    申请号：US12788320

    申请日：2010-05-27

    Applicant: Chen-Hsun Du ,  Wen-Ching Sun ,  Wei-Lun Chang

    Inventor： Chen-Hsun Du ,  Wen-Ching Sun ,  Wei-Lun Chang

    IPC: H01L31/00

    CPC classification number: H01L31/02167 ,  H01L31/022433 ,  H01L31/068 ,  Y02E10/547

    Abstract: A bifacial solar cell including a semiconductor substrate of a first conductivity type, a fixed charge layer, a first grid electrode, a semiconductor layer of a second conductivity type and a second grid electrode are provided. The fixed charge layer is located on a rear surface of the semiconductor substrate. The first grid electrode is located over the rear surface of the semiconductor substrate and electrically connected to the rear surface of the semiconductor substrate by penetrating through the fixed charge layer. The semiconductor layer is located on the front surface of the semiconductor layer. The second grid electrode is located over and electrically connected to the semiconductor layer.

    Abstract translation: 提供了包括第一导电类型的半导体衬底，固定电荷层，第一栅极，第二导电类型的半导体层和第二栅极的双面太阳能电池。 固定电荷层位于半导体衬底的后表面上。 第一栅电极位于半导体衬底的后表面上，并通过穿透固定电荷层与半导体衬底的后表面电连接。 半导体层位于半导体层的正面上。 第二栅电极位于半导体层上并电连接。

    ATOMIC LAYER DEPOSITION APPARATUS
    8.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
    原子层沉积装置

    公开(公告)号：US20100083900A1

    公开(公告)日：2010-04-08

    申请号：US12427763

    申请日：2009-04-22

    Applicant: Wen-Ching Sun ,  Yun-Sheng Chung ,  Chung-Wen Lan

    Inventor： Wen-Ching Sun ,  Yun-Sheng Chung ,  Chung-Wen Lan

    IPC: C23C16/00

    CPC classification number: C23C16/45544

    Abstract: An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.

    Abstract translation: 提供原子层沉积装置。 原子层沉积设备包括反应室，第一加热器，第二加热器，第一气体供应系统，第二气体供应系统和真空系统。 真空系统连接到反应室。 反应室包括预热室和连接到预热室的电镀室。 第一个加热器是用于加热预热室。 第一气体供应系统连接到预热室。 第二个加热器用于加热电镀室。 第二气体供应系统连接到电镀室。

    PASSIVATION LAYER STRUCTURE OF SOLAR CELL AND FABRICATING METHOD THEREOF
    9.
    发明申请
    PASSIVATION LAYER STRUCTURE OF SOLAR CELL AND FABRICATING METHOD THEREOF 审中-公开
    太阳能电池的钝化层结构及其制备方法

    公开(公告)号：US20090165855A1

    公开(公告)日：2009-07-02

    申请号：US12052737

    申请日：2008-03-21

    Applicant: Wen-Ching Sun ,  Chien-Hsun Chen ,  Chung-Wen Lan ,  Chien-Rong Huang

    Inventor： Wen-Ching Sun ,  Chien-Hsun Chen ,  Chung-Wen Lan ,  Chien-Rong Huang

    IPC: H01L31/0264 ,  H01L31/04 ,  H01L31/18

    CPC classification number: H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.

    Abstract translation: 提供了设置在基板上的太阳能电池的钝化层结构。 钝化层结构具有第一钝化层和第二钝化层。 第一钝化层设置在基板上。 第二钝化层设置在基板和第一钝化层之间，第二钝化层的材料是基板的材料的氧化物。 由于第二钝化层设置在基板和第一钝化层之间，因此光电装置的表面钝化效应和载流子寿命增加，并且太阳能电池的光电转换效率也增加。

    METHOD OF FAST HYDROGEN PASSIVATION TO SOLAR CELLS MADE OF CRYSTALLINE SILICON
    10.
    发明申请
    METHOD OF FAST HYDROGEN PASSIVATION TO SOLAR CELLS MADE OF CRYSTALLINE SILICON 审中-公开
    快速氢钝化到晶体硅太阳能电池的方法

    公开(公告)号：US20090101202A1

    公开(公告)日：2009-04-23

    申请号：US11873423

    申请日：2007-10-17

    Applicant: Wen-Ching Sun ,  Chien-Hsun Chen ,  Jon-Yiew Gan ,  Jenn-Chang Hwang ,  Chwung-Shan Kou ,  Chih-Wei Wang ,  Juan-You Lin

    Inventor： Wen-Ching Sun ,  Chien-Hsun Chen ,  Jon-Yiew Gan ,  Jenn-Chang Hwang ,  Chwung-Shan Kou ,  Chih-Wei Wang ,  Juan-You Lin

    IPC: H01L31/00

    CPC classification number: H01L31/1868 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of improving efficiency of solar cells made of crystalline silicon, including monocrystalline silicon, multicrystalline silicon and polycrystalline silicon is provided. In the method, a negative bias pulse is applied to solar cells at a predetermined voltage, a predetermined frequency, and a predetermined pulse width while immersing the solar cells in a hydrogen plasma. Hydrogen ions are attracted and quickly implanted into the solar cells. Thus, the passivation of crystal defects in the solar cells can be realized in a short period. Meanwhile, the properties of an antireflection layer cannot be damaged as proper operating parameters are used. Consequently, the serious resistance of the solar cells can be significantly reduced and the filling factor increases as a result. Further, the short-circuit current and the open-circuit voltage can be increased. Therefore, the efficiency can be enhanced.

    Abstract translation: 提供了一种提高由晶体硅制成的太阳能电池的效率的方法，包括单晶硅，多晶硅和多晶硅。 在该方法中，在将太阳能电池浸入氢等离子体的同时，以预定电压，预定频率和预定脉冲宽度向负载偏压脉冲施加负偏压脉冲。 氢离子被吸引并迅速地植入到太阳能电池中。 因此，可以在短时间内实现太阳能电池中的晶体缺陷的钝化。 同时，由于使用适当的操作参数，抗反射层的性能不会被破坏。 因此，可以显着降低太阳能电池的严重阻力，结果填充因素增加。 此外，可以增加短路电流和开路电压。 因此，可以提高效率。

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