公开(公告)号：US08518832B1

公开(公告)日：2013-08-27

申请号：US13169588

申请日：2011-06-27

Applicant: Xiaoyu Yang ,  Xianzhong Zeng ,  Yan Chen ,  Yunhe Huang ,  Jinqiu Zhang ,  Yang Xiang ,  Ching-Huang Lu

Inventor： Xiaoyu Yang ,  Xianzhong Zeng ,  Yan Chen ,  Yunhe Huang ,  Jinqiu Zhang ,  Yang Xiang ,  Ching-Huang Lu

IPC: H01L21/311 ,  H01L21/461

CPC classification number: B81C1/00849 ,  B81B2203/0118 ,  B81C1/0015 ,  B81C2201/0132 ,  G03F7/40 ,  H01L21/31133

Abstract: A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.

Abstract translation: 提供了一种用于蚀刻掩模层并从具有从定向蚀刻遮蔽的区域的结构中除去残余物的方法。 该结构具有形成通过来自第一方向的各向异性轰击而被阻挡而不被蚀刻的轮廓区域的形状，以及在该结构上形成在掩模层上的掩模; 第一蚀刻工艺去除掩模层的至少一部分并且将掩模层的至少一部分保留在遮蔽区域中。 第二蚀刻工艺通过基于氢的微波等离子体蚀刻去除遮蔽区域中的掩模层的至少一部分。

公开(公告)号：US08703397B1

公开(公告)日：2014-04-22

申请号：US13434514

申请日：2012-03-29

Applicant: Xianzhong Zeng ,  Hai Sun

Inventor： Xianzhong Zeng ,  Hai Sun

IPC: G03F7/26

CPC classification number: G03F7/095 ,  G03F7/091 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

Abstract: A method for fabricating a side shield for a magnetic transducer is described. The magnetic transducer has a nonmagnetic layer and a pole on the nonmagnetic layer. The pole has sidewalls and an air-bearing surface location (ABS location) corresponding to an air-bearing surface (ABS). A developable bottom antireflective coating (D-BARC) layer covering the pole and at least a portion of the nonmagnetic layer is provided. The D-BARC layer is photosensitive. A photosensitive mask layer is provided on the D-BARC layer. A first portion of the mask layer and a first portion of the D-BARC layer are removed to form a bi-layer mask. The bi-layer mask has an aperture in the mask layer and the D-BARC layer. At least one side shield layer is deposited. At least a portion of the at least one side shield layer resides in the aperture. The bi-layer mask is also removed.

Abstract translation: 描述了用于制造用于磁换能器的侧屏蔽的方法。 磁换能器在非磁性层上具有非磁性层和极。 杆具有对应于空气轴承表面（ABS）的侧壁和空气轴承表面位置（ABS位置）。 提供了覆盖极点和非磁性层的至少一部分的可显影底部抗反射涂层（D-BARC）层。 D-BARC层是光敏的。 在D-BARC层上提供感光掩模层。 除去掩模层的第一部分和D-BARC层的第一部分以形成双层掩模。 双层掩模在掩模层和D-BARC层中具有孔径。 沉积至少一个侧面屏蔽层。 至少一个侧面屏蔽层的至少一部分位于孔中。 双层掩模也被去除。

公开(公告)号：US09274438B1

公开(公告)日：2016-03-01

申请号：US12146370

申请日：2008-06-25

Applicant: Hongping Yuan ,  Hai Sun ,  Xianzhong Zeng ,  Winnie Yu

Inventor： Hongping Yuan ,  Hai Sun ,  Xianzhong Zeng ,  Winnie Yu

IPC: G03C5/04 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/2022 ,  G03F7/70466 ,  H01L21/0274

Abstract: A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.

Abstract translation: 一种方法和系统在衬底上的场上提供微电子器件。 每个场包括至少一个具有关键装置特征的微电子装置和远离关键装置特征的剩余装置特征。 所述方法和系统包括提供用于制造微电子器件的光致抗蚀剂层并且使用暗场掩模曝光光致抗蚀剂层。 暗场掩模用于定义与关键设备特征对应的关键掩模特征并暴露场的第一部分。 第一部分不超过每个领域的百分之五。 该方法和系统还包括使用清晰的场屏蔽来曝光光致抗蚀剂层。 清除场掩模用于定义对应于剩余设备特征的剩余掩模特征。 清除场掩模曝光与第一部分不同的场的第二部分。

公开(公告)号：US08322023B1

公开(公告)日：2012-12-04

申请号：US12615544

申请日：2009-11-10

Applicant: Xianzhong Zeng ,  Yunhe Huang ,  Ling Wang ,  Hai Sun

Inventor： Xianzhong Zeng ,  Yunhe Huang ,  Ling Wang ,  Hai Sun

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/315 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for fabricating a magnetic transducer is described. The magnetic transducer includes a pole having a pole tip and a flared region. The method Includes providing a first mask layer on the pole and providing a second mask layer on the first mask layer. The first mask layer is soluble in a predetermined solution and has a first thickness. The second mask layer has a second thickness greater than the first thickness. The method also includes forming a mask from the first mask layer and the second mask layer. The step of forming the mask layer includes using the predetermined solution. The mask has a pattern that exposes a portion of the pole tip and covers a portion of the flared region. The method also includes providing a wrap-around shield on at least the pole tip.

Abstract translation: 描述了用于制造磁换能器的方法。 磁换能器包括具有极尖和扩口区域的极。 该方法包括在极点上提供第一掩模层，并在第一掩模层上提供第二掩模层。 第一掩模层可溶于预定溶液并具有第一厚度。 第二掩模层具有大于第一厚度的第二厚度。 该方法还包括从第一掩模层和第二掩模层形成掩模。 形成掩模层的步骤包括使用预定的溶液。 掩模具有暴露极尖的一部分并覆盖扩张区域的一部分的图案。 该方法还包括在至少极尖上提供环绕屏蔽。

公开(公告)号：US07785666B1

公开(公告)日：2010-08-31

申请号：US11955266

申请日：2007-12-12

Applicant: Hai Sun ,  Liubo Hong ,  Hongping Yuan ,  Yizhong Wang ,  Winnie Yu ,  Xianzhong Zeng

Inventor： Hai Sun ,  Liubo Hong ,  Hongping Yuan ,  Yizhong Wang ,  Winnie Yu ,  Xianzhong Zeng

IPC: B05D1/32

CPC classification number: G11B5/855 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method and system for fabricating a magnetic recording device are described. The method and system include providing a mask layer on the magnetic recording device and imprinting a pattern in the mask layer to form a mask. The method and system also include transferring the pattern from the mask to the magnetic recording device. In another aspect, the method and system include providing a malleable mask layer on the magnetic recording device. In this aspect, the method and system also include depressing an imprint mask into the mask layer and curing the mask layer while the imprint mask is depressed into the mask layer to provide a mask having a pattern. The pattern may correspond to a read sensor and/or a perpendicular magnetic recording pole. The method and system also include transferring the pattern from the mask to the magnetic recording device.

Abstract translation: 描述了用于制造磁记录装置的方法和系统。 所述方法和系统包括在磁记录装置上设置掩模层并在掩模层中印刷图案以形成掩模。 该方法和系统还包括将图案从掩模转移到磁记录装置。 在另一方面，该方法和系统包括在磁记录装置上提供可延展的掩模层。 在这方面，该方法和系统还包括将印模掩模压入掩模层中并固化掩模层，同时将印模掩模压入掩模层中以提供具有图案的掩模。 图案可以对应于读取传感器和/或垂直磁记录极。 该方法和系统还包括将图案从掩模转移到磁记录装置。

公开(公告)号：US20110086240A1

公开(公告)日：2011-04-14

申请号：US12579316

申请日：2009-10-14

Applicant: Xiaohai XIANG ,  Yun-Fei LI ,  Jinqiu ZHANG ,  Hongping YUAN ,  Xianzhong ZENG ,  Hai SUN

Inventor： Xiaohai XIANG ,  Yun-Fei LI ,  Jinqiu ZHANG ,  Hongping YUAN ,  Xianzhong ZENG ,  Hai SUN

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T428/11

Abstract: Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.

Abstract translation: 本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。 在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。 该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角 去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

公开(公告)号：US07846643B1

公开(公告)日：2010-12-07

申请号：US11934599

申请日：2007-11-02

Applicant: Hai Sun ,  Winnie Yu ,  Hongping Yuan ,  Yizhong Wang ,  Xianzhong Zeng

Inventor： Hai Sun ,  Winnie Yu ,  Hongping Yuan ,  Yizhong Wang ,  Xianzhong Zeng

IPC: G03F1/00

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G03F1/30 ,  G03F1/34

Abstract: A method and system for providing a microelectric device, such as a magnetoresistive read sensor are described. The method and system include providing a mask layer on the microelectric device. The method and system further include exposing the mask layer to provide a mask. A portion of the mask covers a portion of the microelectric device. The step of exposing the mask layer further includes utilizing a chromeless alt-phase shift mask for providing the portion of the mask.

Abstract translation: 描述了一种用于提供诸如磁阻读取传感器的微电子装置的方法和系统。 该方法和系统包括在微电子器件上提供掩模层。 该方法和系统还包括曝光掩模层以提供掩模。 掩模的一部分覆盖微电子器件的一部分。 暴露掩模层的步骤进一步包括利用无铬替代相位掩模来提供掩模的该部分。

公开(公告)号：US09202480B2

公开(公告)日：2015-12-01

申请号：US12579316

申请日：2009-10-14

Applicant: Xiaohai Xiang ,  Yun-Fei Li ,  Jinqiu Zhang ,  Hongping Yuan ,  Xianzhong Zeng ,  Hai Sun

Inventor： Xiaohai Xiang ,  Yun-Fei Li ,  Jinqiu Zhang ,  Hongping Yuan ,  Xianzhong Zeng ,  Hai Sun

IPC: B44C1/22 ,  C03C15/00 ,  H01L21/4763 ,  G11B5/31 ,  G11B5/127

CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T428/11

Abstract: Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.

Abstract translation: 本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。 在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。 该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角 去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

公开(公告)号：US08394280B1

公开(公告)日：2013-03-12

申请号：US12614210

申请日：2009-11-06

Applicant: Dujiang Wan ,  Hai Sun ,  Hongping Yuan ,  Ling Wang ,  Xianzhong Zeng

Inventor： Dujiang Wan ,  Hai Sun ,  Hongping Yuan ,  Ling Wang ,  Xianzhong Zeng

IPC: B44C1/22

CPC classification number: G11B5/3163 ,  G11B5/1278 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0337

Abstract: Methods of patterning a material are disclosed. A first resist pattern is formed on a field. A protective layer is formed over the first resist pattern and at least a portion of the field. A second resist pattern is formed over a portion of the protective layer. A portion of a material to be patterned deposited adjacent to the first and second resist patterns is removed.

Abstract translation: 公开了图案化材料的方法。 在场上形成第一抗蚀剂图案。 在第一抗蚀剂图案和场的至少一部分上形成保护层。 在保护层的一部分上形成第二抗蚀剂图案。 除去与第一和第二抗蚀剂图案相邻的被图案化沉积的材料的一部分。

公开(公告)号：US20120237878A1

公开(公告)日：2012-09-20

申请号：US13051884

申请日：2011-03-18

Applicant: XIANZHONG ZENG ,  DUJIANG WAN ,  HONGPING YUAN ,  LING WANG ,  MIAO WANG ,  HAI SUN

Inventor： XIANZHONG ZENG ,  DUJIANG WAN ,  HONGPING YUAN ,  LING WANG ,  MIAO WANG ,  HAI SUN

IPC: G03F7/20

CPC classification number: G11B5/3116 ,  G11B5/315 ,  G11B5/3163

Abstract: A method for fabricating a magnetic transducer having a nonmagnetic intermediate layer is described. A pole is provided on the intermediate layer. The pole has sides, a bottom, a top wider than the bottom and a leading bevel proximate to an ABS location. A side gap is provided adjacent to at least the sides of the pole. A bottom antireflective coating (BARC) layer is provided on the intermediate layer. The BARC layer is removable using a wet etchant and is adjacent to at least a portion of the side gap. A mask layer is provided on the BARC layer. A pattern is photolithographically transferred into the mask layer, forming a shield mask. Part of the BARC layer is exposed to the wet etchant such that the sides of the pole and the side gap are free of the BARC layer. At least a magnetic side shield is provided.

Abstract translation: 描述了一种用于制造具有非磁性中间层的磁换能器的方法。 在中间层上设置极点。 极具有侧面，底部，比底部更宽的顶部和靠近ABS位置的前斜面。 在极的至少两侧附近提供侧面间隙。 在中间层上提供底部抗反射涂层（BARC）层。 BARC层可以使用湿蚀刻剂去除，并且与侧间隙的至少一部分相邻。 在BARC层上提供掩模层。 将图案光刻地转印到掩模层中，形成屏蔽掩模。 BARC层的一部分暴露于湿蚀刻剂，使得极和侧间隙的边不含BARC层。 至少提供一个磁性侧屏蔽。