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    ACTIVE MATRIX SUBSTRATE
    1.
    发明申请
    ACTIVE MATRIX SUBSTRATE 有权
    主动矩阵基板

    公开(公告)号：US20100044710A1

    公开(公告)日：2010-02-25

    申请号：US12531406

    申请日：2008-02-29

    申请人： Yoshimizu Moriya ,  Mutsumi Nakajima ,  Yasuyoshi Kaise ,  Makoto Kita ,  Hiroshi Matsukizono ,  Yoshiyuki Itoh

    发明人： Yoshimizu Moriya ,  Mutsumi Nakajima ,  Yasuyoshi Kaise ,  Makoto Kita ,  Hiroshi Matsukizono ,  Yoshiyuki Itoh

    IPC分类号： H01L33/00

    CPC分类号： H01L27/12 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1277 ,  H01L29/78645 ,  H01L29/78696

    摘要： In an active-matrix substrate (100) according to the present invention, a semiconductor layer (110) has a first gettering region (112) adjacent to the source region (132) of a first thin-film transistor (130), a second gettering region (114) adjacent to the drain region (146) of a second thin-film transistor (140), and a third gettering region (116) adjacent to any of the source and drain regions located between the respective channel regions (134 and 144) of the first and second thin-film transistors (130 and 140) among the source and drain regions of the thin-film transistors included in the thin-film transistor element (120).

    摘要翻译： 在根据本发明的有源矩阵基板（100）中，半导体层（110）具有与第一薄膜晶体管（130）的源极区域（132）相邻的第一吸杂区域（112），第二吸收区域 与第二薄膜晶体管（140）的漏极区域（146）相邻的吸杂区域（114）和位于各个沟道区域（134和134）之间的任何源极和漏极区域的第三吸杂区域（116） 包括在薄膜晶体管元件（120）中的薄膜晶体管的源极和漏极区域中的第一和第二薄膜晶体管（130和140）的第一和第二薄膜晶体管（144和144）。

    Semiconductor laser element and semiconductor laser element manufacturing method
    2.
    发明申请
    Semiconductor laser element and semiconductor laser element manufacturing method 审中-公开
    半导体激光元件和半导体激光元件制造方法

    公开(公告)号：US20050058170A1

    公开(公告)日：2005-03-17

    申请号：US10938660

    申请日：2004-09-13

    申请人： Yoshiyuki Itoh ,  Toshiyuki Terada ,  Shunji Yoshitake

    发明人： Yoshiyuki Itoh ,  Toshiyuki Terada ,  Shunji Yoshitake

    IPC分类号： H01S5/343 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3215 ,  H01S5/34326

    摘要： Disclosed is a semiconductor laser element including: a double heterojunction structure having a p-type clad layer; a second p-type clad layer formed on the double heterojunction structure, having a first dopant and a ridge shape; a p-type contact layer formed on the second p-type clad layer, having a second dopant whose diffusion velocity is slower than that of the first dopant; a dielectric film covering a side surface of the second p-type clad layer and the p-type contact layer, and a surface on which the second p-type clad layer is not formed on the double heterojunction structure; and a p-side electrode formed on the p-type contact layer. Meanwhile, disclosed is a semiconductor laser element including a similar double heterojunction structure, a second p-type clad layer, a p-type contact layer, and a p-side electrode, with end faces of cleavages of the double heterojunction structure thereof being an unmarshalled layer structure.

    摘要翻译： 公开了一种半导体激光元件，包括：具有p型覆层的双异质结结构; 形成在双异质结结构上的第二p型覆盖层，具有第一掺杂物和脊形; 形成在所述第二p型覆盖层上的p型接触层，其具有扩散速度比所述第一掺杂剂的扩散速度慢的第二掺杂剂; 覆盖第二p型覆盖层和p型接触层的侧面的电介质膜和在双异质结结构上未形成第二p型覆盖层的表面; 以及形成在p型接触层上的p侧电极。 同时，公开了包括类似的双异质结结构，第二p型覆盖层，p型接触层和p侧电极的半导体激光元件，其双重异质结结构的切割端面为 未组织的层结构。

    Curable urethane composition
    3.
    发明授权
    Curable urethane composition 失效
    可固化的聚氨酯组合物

    公开(公告)号：US4603188A

    公开(公告)日：1986-07-29

    申请号：US753470

    申请日：1985-07-10

    申请人： Susumu Kusakawa ,  Yoshiyuki Itoh ,  Seiichi Morooka ,  Kenji Komazawa ,  Kenji Ueda

    发明人： Susumu Kusakawa ,  Yoshiyuki Itoh ,  Seiichi Morooka ,  Kenji Komazawa ,  Kenji Ueda

    IPC分类号： C08G18/65 ,  C08G18/36

    CPC分类号： C08G18/6547 ,  C08G18/6576

    摘要： A new curable urethane composition which comprises a polyhydroxyl component and a polyisocyanate component, wherein said polyhydroxyl component comprises80 to 10% by weight of an interesterification product (A) which is the reaction product of castor oil (a1) and substantially non-hydroxyl-containing naturally occurring triglyceride oil (a2) and, optionally, low molecular weight polyol (a3) and20 to 90% by weight of a polybutadiene based polyol (B).The composition has a sufficiently low viscosity to be easily handled and forms a polyurethane resin with excellent elongation and electrical properties.

    摘要翻译： 一种新的可固化的聚氨酯组合物，其包含多羟基组分和多异氰酸酯组分，其中所述多羟基组分包含80至10重量％的作为蓖麻油（a1）和基本上非羟基的组分的酯交换产物（A） 含有天然存在的甘油三酯油（a2）和任选的低分子量多元醇（a3）和20至90重量％的聚丁二烯基多元醇（B）。 该组合物具有足够低的粘度以容易地处理并形成具有优异伸长率和电性能的聚氨酯树脂。

    Semiconductor laser and method for manufacturing the same
    4.
    发明授权
    Semiconductor laser and method for manufacturing the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US07164701B2

    公开(公告)日：2007-01-16

    申请号：US10388370

    申请日：2003-03-13

    申请人： Akira Tanaka ,  Hirokazu Tanaka ,  Yoshiyuki Itoh ,  Koichi Gen-Ei

    发明人： Akira Tanaka ,  Hirokazu Tanaka ,  Yoshiyuki Itoh ,  Koichi Gen-Ei

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2086 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3432

    摘要： A high-output semiconductor laser of a real index-guided structure comprises: a first conductive type clad layer; active layer for emitting light by current injection; second conductive type first clad layer; second conductive type second clad layer as a ridge waveguide; current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and second conductive type third clad layer having a mobility enough to guide a current to the second conductive type second clad layer and prevent a flow of a leak current into the current-blocking layer.

    摘要翻译： 实数折射率引导结构的高输出半导体激光器包括：第一导电型覆盖层; 通过电流注入发光的有源层; 第二导电型第一覆层; 第二导电型第二包层作为脊波导; 电流阻挡层形成在第二导电型第二覆盖层的两侧，并且具有比第二导电型第一和第二覆盖层的带隙更大的带隙; 以及第二导电型第三覆层，其具有足够的迁移率，以将电流引导到第二导电型第二包层，并防止泄漏电流流入电流阻挡层。

    Selective recrystallization of semiconductor
    5.
    发明授权
    Selective recrystallization of semiconductor 有权
    半导体选择性重结晶

    公开(公告)号：US08466048B2

    公开(公告)日：2013-06-18

    申请号：US13256050

    申请日：2010-03-09

    申请人： Yoshiyuki Itoh ,  Masashi Maekawa ,  Norihisa Asano ,  Hiroki Taniyama

    发明人： Yoshiyuki Itoh ,  Masashi Maekawa ,  Norihisa Asano ,  Hiroki Taniyama

    IPC分类号： H01L21/20

    CPC分类号： H01L29/861 ,  G02F2001/13312 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1285

    摘要： Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

    摘要翻译： 公开了一种半导体器件，其包括基板11，具有由基板11支撑的第一半导体层16A的薄膜晶体管20，具有由基板11支撑的第二半导体层16B的薄膜二极管30，以及 形成在基板11和第二半导体层16B之间的金属层12。 第一半导体层16A是横向生长的晶体半导体膜，第二半导体层16B是含有细晶粒的结晶半导体膜。 第二半导体层16B的平均表面粗糙度高于第一半导体层16A的平均表面粗糙度。 因此，与以往的半导体装置相比，提高了TFD的光学灵敏度，提高了TFT的可靠性。

    Active matrix substrate
    6.
    发明授权
    Active matrix substrate 有权
    有源矩阵基板

    公开(公告)号：US08212251B2

    公开(公告)日：2012-07-03

    申请号：US12531406

    申请日：2008-02-29

    申请人： Yoshimizu Moriya ,  Mutsumi Nakajima ,  Yasuyoshi Kaise ,  Makoto Kita ,  Hiroshi Matsukizono ,  Yoshiyuki Itoh

    发明人： Yoshimizu Moriya ,  Mutsumi Nakajima ,  Yasuyoshi Kaise ,  Makoto Kita ,  Hiroshi Matsukizono ,  Yoshiyuki Itoh

    IPC分类号： H01L27/15

    CPC分类号： H01L27/12 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1277 ,  H01L29/78645 ,  H01L29/78696

    摘要： In an active-matrix substrate (100) according to the present invention, a semiconductor layer (110) has a first gettering region (112) adjacent to the source region (132) of a first thin-film transistor (130), a second gettering region (114) adjacent to the drain region (146) of a second thin-film transistor (140), and a third gettering region (116) adjacent to any of the source and drain regions located between the respective channel regions (134 and 144) of the first and second thin-film transistors (130 and 140) among the source and drain regions of the thin-film transistors included in the thin-film transistor element (120).

    摘要翻译： 在根据本发明的有源矩阵基板（100）中，半导体层（110）具有与第一薄膜晶体管（130）的源极区域（132）相邻的第一吸杂区域（112），第二吸收区域 与第二薄膜晶体管（140）的漏极区域（146）相邻的吸杂区域（114）和位于各个沟道区域（134和134）之间的任何源极和漏极区域的第三吸杂区域（116） 包括在薄膜晶体管元件（120）中的薄膜晶体管的源极和漏极区域中的第一和第二薄膜晶体管（130和140）的第一和第二薄膜晶体管（144和144）。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110315995A1

    公开(公告)日：2011-12-29

    申请号：US13256050

    申请日：2010-03-09

    申请人： Yoshiyuki Itoh ,  Masashi Maekawa ,  Norihisa Asano ,  Hiroki Taniyama

    发明人： Yoshiyuki Itoh ,  Masashi Maekawa ,  Norihisa Asano ,  Hiroki Taniyama

    IPC分类号： H01L29/04 ,  H01L21/20

    CPC分类号： H01L29/861 ,  G02F2001/13312 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/12 ,  H01L27/1229 ,  H01L27/1285

    摘要： Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

    摘要翻译： 公开了一种半导体器件，其包括基板11，具有由基板11支撑的第一半导体层16A的薄膜晶体管20，具有由基板11支撑的第二半导体层16B的薄膜二极管30，以及 形成在基板11和第二半导体层16B之间的金属层12。 第一半导体层16A是横向生长的晶体半导体膜，第二半导体层16B是含有细晶粒的结晶半导体膜。 第二半导体层16B的平均表面粗糙度高于第一半导体层16A的平均表面粗糙度。 因此，与以往的半导体装置相比，提高了TFD的光学灵敏度，提高了TFT的可靠性。