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1.发明授权公开(公告)号：US07777272B2
公开(公告)日：2010-08-17
申请号：US12112965
申请日：2008-04-30
申请人： Sun-Pil Youn , Hyeong-Jun Kim , Jin-Tae Kang , Young-Jae Joo
发明人： Sun-Pil Youn , Hyeong-Jun Kim , Jin-Tae Kang , Young-Jae Joo
IPC分类号： H01L29/792 , H01L29/78 , H01L21/8247
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L23/3128 , H01L25/0657 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7923 , H01L29/7926 , H01L2224/48227 , H01L2924/01019 , H01L2924/15311
摘要： A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.
摘要翻译： 提供了可以高度集成而不降低可靠性的非易失性存储器件及其制造方法。 在非易失性存储器件中，第一导电类型的第一掺杂层设置在衬底上。 与第一导电类型相反的第二导电类型的半导体柱从第一掺杂层向上延伸。 第一控制栅电极基本上围绕半导体柱的第一侧壁。 第二控制栅电极基本上围绕半导体柱的第二侧壁并与第一控制栅电极分离。 第一导电类型的第二掺杂层设置在半导体柱上。
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2.发明申请Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and elctronic apparatus including the same 有权用于散热构件的胶带，包括散热构件的薄膜型半导体封装的芯片，以及包括该散热构件的电子装置公开(公告)号：US20090273076A1
公开(公告)日：2009-11-05
申请号：US12385731
申请日：2009-04-17
申请人： Kyong-sei CHOI , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
发明人： Kyong-sei CHOI , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
IPC分类号： H01L23/498 , H01L23/36
CPC分类号： H01L23/49838 , H01L23/4985 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/01079 , H05K1/0203 , H05K1/189 , H05K2201/09109 , H05K2201/1028 , H05K2201/10674 , H05K2203/1581 , H01L2924/00
摘要： Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.
摘要翻译： 公开了一种片上胶片（COF）型半导体封装以及使用其的器件。 COF型半导体封装可以包括包括顶表面和底表面的绝缘衬底，绝缘衬底的顶表面上的半导体器件，绝缘衬底的底表面上的散热部件，以及绝缘衬底的至少一个空间 绝缘基板的底表面和散热部件的顶表面。
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3.发明授权Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and electronic apparatus including the same 有权用于散热构件的胶带，包括散热构件的薄膜型半导体封装的芯片，以及包括该散热构件的电子设备公开(公告)号：US08222089B2
公开(公告)日：2012-07-17
申请号：US13033307
申请日：2011-02-23
申请人： Kyoung-sei Choi , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
发明人： Kyoung-sei Choi , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
IPC分类号： H01J9/00
CPC分类号： H01L23/49838 , H01L23/4985 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/01079 , H05K1/0203 , H05K1/189 , H05K2201/09109 , H05K2201/1028 , H05K2201/10674 , H05K2203/1581 , H01L2924/00
摘要： Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.
摘要翻译： 公开了一种片上胶片（COF）型半导体封装以及使用其的器件。 COF型半导体封装可以包括包括顶表面和底表面的绝缘衬底，绝缘衬底的顶表面上的半导体器件，绝缘衬底的底表面上的散热部件，以及绝缘衬底的至少一个空间 绝缘基板的底表面和散热部件的顶表面。
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4.发明授权Methods of fabricating multi-bit phase-change memory devices and devices formed thereby 有权制造多位相变存储器件和由此形成的器件的方法公开(公告)号：US07704788B2
公开(公告)日：2010-04-27
申请号：US12062905
申请日：2008-04-04
申请人： Sun-Pil Youn , Jin-Tae Kang , Young-Jae Joo , Hyeong-Jun Kim , Jae-Min Shin
发明人： Sun-Pil Youn , Jin-Tae Kang , Young-Jae Joo , Hyeong-Jun Kim , Jae-Min Shin
CPC分类号： H01L45/06 , G11C11/5678 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683
摘要： Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.
摘要翻译： 形成集成电路器件的方法包括在衬底上形成至少一个非易失性存储单元。 该存储单元包括多个相互电耦合的相变材料区域。 该多个可相位改变的材料区域被共同配置为在使用至少四个串行程序电流进行串行编程时支持至少2位的数据。 当编程时，多个相变材料区域中的每一个具有不同的电阻特性。
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5.发明申请NON-VOLATILE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 失效非易失性存储器件，其制造方法和包括其的半导体封装公开(公告)号：US20080277720A1
公开(公告)日：2008-11-13
申请号：US12112965
申请日：2008-04-30
申请人： Sun-Pil YOUN , Hyeong-Jun KIM , Jin-Tae KANG , Young-Jae JOO
发明人： Sun-Pil YOUN , Hyeong-Jun KIM , Jin-Tae KANG , Young-Jae JOO
IPC分类号： H01L29/72
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L23/3128 , H01L25/0657 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7923 , H01L29/7926 , H01L2224/48227 , H01L2924/01019 , H01L2924/15311
摘要： A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.
摘要翻译： 提供了可以高度集成而不降低可靠性的非易失性存储器件及其制造方法。 在非易失性存储器件中，第一导电类型的第一掺杂层设置在衬底上。 与第一导电类型相反的第二导电类型的半导体柱从第一掺杂层向上延伸。 第一控制栅电极基本上围绕半导体柱的第一侧壁。 第二控制栅电极基本上围绕半导体柱的第二侧壁并与第一控制栅电极分离。 第一导电类型的第二掺杂层设置在半导体柱上。
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6.发明申请TAPE FOR HEAT DISSIPATING MEMBER, CHIP ON FILM TYPE SEMICONDUCTOR PACKAGE INCLUDING HEAT DISSIPATING MEMBER, AND ELECTRONIC APPARATUS INCLUDING THE SAME 有权用于散热构件的胶带，薄膜型半导体封装，包括散热构件的芯片，以及包括其的电子设备公开(公告)号：US20110143625A1
公开(公告)日：2011-06-16
申请号：US13033307
申请日：2011-02-23
申请人： Kyoung-sei Choi , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
发明人： Kyoung-sei Choi , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
IPC分类号： H01J9/00
CPC分类号： H01L23/49838 , H01L23/4985 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/01079 , H05K1/0203 , H05K1/189 , H05K2201/09109 , H05K2201/1028 , H05K2201/10674 , H05K2203/1581 , H01L2924/00
摘要： Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.
摘要翻译： 公开了一种片上胶片（COF）型半导体封装以及使用其的器件。 COF型半导体封装可以包括包括顶表面和底表面的绝缘衬底，绝缘衬底的顶表面上的半导体器件，绝缘衬底的底表面上的散热部件，以及绝缘衬底的至少一个空间 绝缘基板的底表面和散热部件的顶表面。
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7.发明授权Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and electronic apparatus including the same 有权用于散热构件的胶带，包括散热构件的薄膜型半导体封装的芯片，以及包括该散热构件的电子设备公开(公告)号：US07915727B2
公开(公告)日：2011-03-29
申请号：US12385731
申请日：2009-04-17
申请人： Kyoung-sei Choi , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
发明人： Kyoung-sei Choi , Byung-seo Kim , Young-jae Joo , Ye-chung Chung , Kyong-soon Cho , Sang-heui Lee , Si-hoon Lee , Sa-yoon Kang , Dae-woo Son , Sang-gui Jo , Jeong-kyu Ha , Young-sang Cho
IPC分类号： H01L23/498 , H01L23/36
CPC分类号： H01L23/49838 , H01L23/4985 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/01079 , H05K1/0203 , H05K1/189 , H05K2201/09109 , H05K2201/1028 , H05K2201/10674 , H05K2203/1581 , H01L2924/00
摘要： Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.
摘要翻译： 公开了一种片上胶片（COF）型半导体封装以及使用其的器件。 COF型半导体封装可以包括包括顶表面和底表面的绝缘衬底，绝缘衬底的顶表面上的半导体器件，绝缘衬底的底表面上的散热部件，以及绝缘衬底的至少一个空间 绝缘基板的底表面和散热部件的顶表面。
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8.发明申请Methods of Fabricating Multi-Bit Phase-Change Memory Devices and Devices Formed Thereby 有权制造由此形成的多位相变存储器件和器件的方法公开(公告)号：US20080248632A1
公开(公告)日：2008-10-09
申请号：US12062905
申请日：2008-04-04
申请人： Sun Pil Youn , Jin-Tae Kang , Young-Jae Joo , Hyeong-Jun Kim , Jae-Min Shin
发明人： Sun Pil Youn , Jin-Tae Kang , Young-Jae Joo , Hyeong-Jun Kim , Jae-Min Shin
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , G11C11/5678 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683
摘要： Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.
摘要翻译： 形成集成电路器件的方法包括在衬底上形成至少一个非易失性存储单元。 该存储单元包括多个相互电耦合的相变材料区域。 该多个可相位改变的材料区域被共同配置为在使用至少四个串行程序电流进行串行编程时支持至少2位的数据。 当编程时，多个相变材料区域中的每一个具有不同的电阻特性。
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