摘要:
A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.
摘要:
A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate.
摘要:
An optical proximity sensor is provided that comprises an infrared light emitter, an infrared light detector, a ceramic housing, a substrate, and a cover or shield. The ceramic housing is mounted on or attached to the substrate, and comprises first and second recesses separated by a light barrier. The cover is mounted over the ceramic housing, the light emitter and the light detector. The infrared light emitter is located within the first recess and mounted on the substrate. The infrared light detector is located within the second recess and mounted on the substrate. The light barrier between the first and second recesses, in conjunction with the remainder of the ceramic housing, the substrate, and the cover or shield substantially attenuates or blocks the transmission of undesired direct, scattered or reflected infrared light between the light emitter and the light detector, and thereby minimizes optical crosstalk and interference between the light emitter and the light detector.
摘要:
A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.
摘要:
A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate.
摘要:
Various embodiments of an ambient light sensor configured to determine the direction of a beam of light incident thereon are disclosed. In one embodiment, an ambient light sensor is provided that comprises a plurality of light detectors arranged in a spatial array upon a light sensing surface. Each of the light detectors in the array is configured to generate an analog output voltage in response to the beam of ambient light falling thereon. The amount of light incident on the individual light detectors in the spatial array varies according to the position of each such sensor with respect to direction of the beam of ambient light. An analog-to-digital converter (ADC) is operably coupled to the plurality of light detectors and is configured to receive the analog output signals generated thereby as inputs thereto, and to provide digital output values representative of the analog signals. Control logic circuitry is operably coupled to the ADC and configured to receive the digital output values therefrom, and is further configured to process such digital output values to determine the direction of the beam of light incident upon the spatial array.
摘要:
Input devices configured to provide user interface by detecting three dimensional movement of an external object are disclosed. The input device comprises at least two photodetector pairs, a radiation source and a circuit configurable to detect differential and common mode signals generated in the photodetector pairs. By detecting the common mode and differential signals, movement of an external object may be determined and used to control a pointer, or a cursor.
摘要:
A semiconductor chip package and method of making the same. A first chip unit includes a first substrate and a first IC chip electrically connected to the first substrate. A second chip unit includes a second substrate and a second IC chip electronically connected to the second substrate. An adhesive material is provided on a surface of the first IC chip and the second chip unit is mounted onto the surface of the first chip unit including the adhesive material so that at least a portion of the second structure is encapsulated by the adhesive material, thereby providing some encapsulation in the same step as mounting. The first chip unit and the second chip unit may be separated by a spacer which may also provide an electrical connection.
摘要:
Various embodiments of an ambient light sensor configured to determine the direction of a beam of light incident thereon are disclosed. In one embodiment, an ambient light sensor is provided that comprises a plurality of light detectors arranged in a spatial array upon a light sensing surface. Each of the light detectors in the array is configured to generate an analog output voltage in response to the beam of ambient light falling thereon. The amount of light incident on the individual light detectors in the spatial array varies according to the position of each such sensor with respect to direction of the beam of ambient light. An analog-to-digital converter (ADC) is operably coupled to the plurality of light detectors and is configured to receive the analog output signals generated thereby as inputs thereto, and to provide digital output values representative of the analog signals. Control logic circuitry is operably coupled to the ADC and configured to receive the digital output values therefrom, and is further configured to process such digital output values to determine the direction of the beam of light incident upon the spatial array.
摘要:
A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.