公开(公告)号：US08461062B2

公开(公告)日：2013-06-11

申请号：US13331258

申请日：2011-12-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

摘要翻译： 基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴 并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

公开(公告)号：US20100087069A1

公开(公告)日：2010-04-08

申请号：US12571688

申请日：2009-10-01

申请人： Hironobu MIYA ,  Kazuyuki Toyoda ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi ,  Kenji Ono ,  Atsushi Morikawa ,  Satoshi Okada

发明人： Hironobu MIYA ,  Kazuyuki Toyoda ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi ,  Kenji Ono ,  Atsushi Morikawa ,  Satoshi Okada

IPC分类号： H01L21/316 ,  C23C16/46 ,  C23C16/513

CPC分类号： C23C16/405 ,  C23C16/483 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31641 ,  H01L21/31645

摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.

摘要翻译： 可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。 提供了制造半导体器件的方法。 该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

公开(公告)号：US20090223448A1

公开(公告)日：2009-09-10

申请号：US12379420

申请日：2009-02-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： B05C9/06

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

摘要翻译： 本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，该处理气体供应喷嘴沿着基板的堆叠方向沿着处理室的内壁延伸并且供应 处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此 从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

公开(公告)号：US08420552B2

公开(公告)日：2013-04-16

申请号：US12847328

申请日：2010-07-30

申请人： Yuji Takebayashi ,  Hirohisa Yamazaki ,  Sadayoshi Horii ,  Hideharu Itatani ,  Arito Ogawa

发明人： Yuji Takebayashi ,  Hirohisa Yamazaki ,  Sadayoshi Horii ,  Hideharu Itatani ,  Arito Ogawa

IPC分类号： H01L21/31

CPC分类号： H01L21/02172 ,  C23C16/40 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/67017 ,  H01L21/67103 ,  H01L28/40

摘要： A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.

摘要翻译： 形成了在较高温度下稳定的高k电容绝缘膜。 提供了制造半导体器件的方法。 该方法包括：在衬底上形成包含第一元件的第一非晶绝缘膜; 向所述第一非晶绝缘膜添加与所述第一元素不同的第二元素，以在所述基板上形成第二非晶绝缘膜; 以及在预定退火温度下退火所述第二非晶绝缘膜，以便通过改变所述第二非晶绝缘膜的相位形成第三绝缘膜。 根据退火温度控制添加到第一非晶绝缘膜中的第二元素的浓度。

公开(公告)号：US08012259B2

公开(公告)日：2011-09-06

申请号：US12043574

申请日：2008-03-06

申请人： Yuji Takebayashi

发明人： Yuji Takebayashi

IPC分类号： C23C16/00

CPC分类号： C23C16/45591 ,  C23C16/45546 ,  C23C16/4584 ,  H01L21/67309

摘要： A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.

摘要翻译： 一种具有用于保持晶片的支撑体的基板处理装置，用于容纳晶片的处理室，用于将待处理气体沿平行方向供给待容纳在所述处理室中的待处理晶片的气体供给孔， 布置成面向容纳在上述处理室中的晶片的待处理表面的调节板，以及用于在所述处理室中排出气氛的排气装置。 一种基板处理装置，其中晶片的待处理表面和调节板的中心部分之间的距离比晶片的待处理表面与圆周部分和调节板的中间部分之间的距离窄， 垂直于加工气体的供给方向。

公开(公告)号：USD610559S1

公开(公告)日：2010-02-23

申请号：US29327745

申请日：2008-11-12

申请人： Satoshi Okada ,  Yuji Takebayashi ,  Tsutomu Kato ,  Atsuhiko Ashitani ,  Shintaro Kogura

设计人： Satoshi Okada ,  Yuji Takebayashi ,  Tsutomu Kato ,  Atsuhiko Ashitani ,  Shintaro Kogura

公开(公告)号：US20090258507A1

公开(公告)日：2009-10-15

申请号：US11991354

申请日：2007-03-02

申请人： Takeshi Itoh ,  Kazuyuki Toyoda ,  Yuji Takebayashi

发明人： Takeshi Itoh ,  Kazuyuki Toyoda ,  Yuji Takebayashi

IPC分类号： H01L21/263 ,  C23C16/513

CPC分类号： H01L21/67769 ,  H01L21/302 ,  H01L21/67757

摘要： In order to solve the problem of contamination caused by static electricity on the surface of a substrate after plasma treatment, the invention provides a substrate treatment device comprising a standby chamber in which is arranged a transfer device for loading a substrate out of/into a cassette rack accommodating a substrate, said substrate treatment device capable of retaining said substrate transferred by the transfer device in a boat and loading, by way of a boat elevator, the boat into/out of a treatment furnace capable of applying plasma treatment to said substrate, wherein a static eliminator for eliminating static electricity of said substrate is arranged in said standby chamber.

摘要翻译： 为了解决等离子体处理后的基板表面的静电引起的污染问题，本发明提供了一种基板处理装置，其包括备用室，其中设置有用于将基板装载到盒中的转印装置 所述基板处理装置能够将由所述转印装置转印的所述基板保持在舟状体中，并通过舟状升降机将所述船载入/排出能够对所述基板施加等离子体处理的处理炉， 其中，用于消除所述基板的静电的静电消除器布置在所述待机室中。

公开(公告)号：US08866271B2

公开(公告)日：2014-10-21

申请号：US13250708

申请日：2011-09-30

申请人： Katsuhiko Yamamoto ,  Yuji Takebayashi ,  Tatsuyuki Saito ,  Masahisa Okuno

发明人： Katsuhiko Yamamoto ,  Yuji Takebayashi ,  Tatsuyuki Saito ,  Masahisa Okuno

IPC分类号： H01L21/26 ,  H01L29/02 ,  H01L21/02 ,  H01L21/67 ,  C23C16/56 ,  C23C16/40 ,  H01L49/02

CPC分类号： H01L21/67115 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02345 ,  H01L28/40

摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.

摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。

公开(公告)号：US08828141B2

公开(公告)日：2014-09-09

申请号：US12379420

申请日：2009-02-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/40 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

摘要翻译： 本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，所述处理气体供应喷嘴沿着基板的堆叠方向沿处理室的内壁延伸并且供应 处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此 从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

公开(公告)号：USD655682S1

公开(公告)日：2012-03-13

申请号：US29378011

申请日：2010-10-28

申请人： Yuji Takebayashi ,  Tatsuyuki Saito ,  Tetsuo Yamamoto ,  Tsutomu Kato ,  Satoshi Okada

设计人： Yuji Takebayashi ,  Tatsuyuki Saito ,  Tetsuo Yamamoto ,  Tsutomu Kato ,  Satoshi Okada