公开(公告)号：US20070184379A1

公开(公告)日：2007-08-09

申请号：US10591345

申请日：2005-03-01

申请人： Shigeo Ashigaki ,  Yoshihiro Kato ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Tetsu Kawasaki ,  Satoru Shimura

发明人： Shigeo Ashigaki ,  Yoshihiro Kato ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Tetsu Kawasaki ,  Satoru Shimura

IPC分类号： G03C1/00

CPC分类号： G03F7/42 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/67051

摘要： A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.

摘要翻译： 基板的处理方法包括：依次形成Si-C基膜和抗蚀剂膜的步骤，所述Si-C基膜和抗蚀剂膜依次形成在基板上形成的待蚀刻目标膜上; 蚀刻使用抗蚀剂膜作为掩模的Si-C基膜的第一蚀刻步骤; 以及使用抗蚀剂膜和Si-C基膜作为掩模蚀刻待蚀刻的目标膜的第二蚀刻步骤。 该处理方法还包括在期望的时刻剥离抗蚀剂膜的剥离步骤。 剥离步骤包括制备作为脱模剂的有机溶剂的制备步骤和将有机溶剂施加到抗蚀剂膜的施加步骤。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US20080268655A1

公开(公告)日：2008-10-30

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/469 ,  H01L21/00

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US20070158027A1

公开(公告)日：2007-07-12

申请号：US11702075

申请日：2007-02-05

申请人： Makoto Aoki ,  Hikaru Yoshitaka ,  Yoshihiro Kato ,  Shigeo Ashigaki ,  Syoichi Abe

发明人： Makoto Aoki ,  Hikaru Yoshitaka ,  Yoshihiro Kato ,  Shigeo Ashigaki ,  Syoichi Abe

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/32633

摘要： In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).

摘要翻译： 在平行板式等离子体处理装置（1）中，挡板（28）装配在室（2）的顶板（2b）和侧壁（2a）之间。 挡板（28）将等离子体限制在室（2）的上部，并且同时构成返回电流返回到高频电源（27）的返回路径。 流经挡板（28）的回流电流通过腔室（2）的顶板（2b）返回到高频电源（27）。

公开(公告)号：US10212813B2

公开(公告)日：2019-02-19

申请号：US13639351

申请日：2011-04-07

申请人： Takaaki Ogashiwa ,  Hiroshi Takahashi ,  Tetsuro Miyahira ,  Yoshihiro Kato

发明人： Takaaki Ogashiwa ,  Hiroshi Takahashi ,  Tetsuro Miyahira ,  Yoshihiro Kato

IPC分类号： B32B27/08 ,  B32B27/38 ,  H05K1/05 ,  C08G59/40 ,  C08G59/62 ,  C08J5/24 ,  C09D163/00 ,  C08K3/22 ,  C08L63/00 ,  C08L71/00 ,  C09D171/00 ,  C08K5/3415 ,  C08K3/013

摘要： There is provided a resin composition for printed wiring boards that, while maintaining excellent flame retardance, has excellent heat resistance, reflow resistance, and drilling workability, and, at the same time, has low water absorption without use of halogen compounds and phosphorus compounds. The resin composition comprises (A) a non-halogen epoxy resin, (B) a biphenyl aralkyl phenolic resin, (C) a maleimide compound and (D) an inorganic filler.

公开(公告)号：US09232648B2

公开(公告)日：2016-01-05

申请号：US14347075

申请日：2012-09-12

申请人： Tetsuro Miyahira ,  Yoshihiro Kato ,  Takaaki Ogashiwa ,  Hiroshi Takahashi

发明人： Tetsuro Miyahira ,  Yoshihiro Kato ,  Takaaki Ogashiwa ,  Hiroshi Takahashi

IPC分类号： B32B3/02 ,  H05K1/03 ,  C01G39/00 ,  C01G39/02 ,  C08J5/24 ,  C08K9/02 ,  C08L63/00 ,  C09C1/00 ,  C08L71/12 ,  B32B27/20

CPC分类号： H05K1/0373 ,  B32B27/20 ,  C01G39/00 ,  C01G39/02 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/84 ,  C08J5/24 ,  C08K3/22 ,  C08K9/02 ,  C08K2003/2255 ,  C08L63/00 ,  C08L71/12 ,  C09C1/0003 ,  H05K2201/0224 ,  Y10T428/24893 ,  Y10T428/256

摘要： The present invention provides a novel surface-treated molybdenum compound powder and provides a prepreg, a laminate, a metal foil laminate, a printed wiring board, and the like that have a low thermal expansion coefficient in the planar direction, and excellent drillability, heat resistance, and flame retardancy. The surface-treated molybdenum compound powder of the present invention has at least part of the surface thereof coated with an inorganic oxide, and this is used as a filler.

摘要翻译： 本发明提供了一种新型的表面处理的钼化合物粉末，并且提供了在平面方向上具有低热膨胀系数的预浸料，层压体，金属箔层压体，印刷线路板等，并且具有优异的可钻性，热 阻力和阻燃性。 本发明的经表面处理的钼化合物粉末的表面的至少一部分涂覆有无机氧化物，并将其用作填料。

公开(公告)号：US20140227531A1

公开(公告)日：2014-08-14

申请号：US14122073

申请日：2012-05-29

申请人： Takaaki Ogashiwa ,  Hiroshi Takahashi ,  Tetsuro Miyahira ,  Yoshihiro Kato

发明人： Takaaki Ogashiwa ,  Hiroshi Takahashi ,  Tetsuro Miyahira ,  Yoshihiro Kato

IPC分类号： H05K1/03 ,  H05K3/00

CPC分类号： H05K3/0061 ,  B32B5/024 ,  B32B15/14 ,  B32B15/20 ,  B32B2255/02 ,  B32B2255/26 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/101 ,  B32B2264/102 ,  B32B2307/51 ,  B32B2457/00 ,  C08G73/0655 ,  C08J5/24 ,  C08J2379/04 ,  C08J2379/08 ,  C08K3/013 ,  C08K5/29 ,  C08K5/315 ,  C08K5/3415 ,  C08K5/3445 ,  C08L63/00 ,  C08L79/04 ,  C08L79/085 ,  H05K1/0326 ,  H05K1/0346 ,  H05K2201/0209 ,  H05K2201/0355 ,  Y10T156/10 ,  Y10T428/31529 ,  C08K3/0033

摘要： It is an object of the present invention to provide, without using a halogenated compound or a phosphorus compound, a resin composition for printed wiring boards, a prepreg, a laminate, and a metal foil-clad laminate, each of which has high-degree flame retardance, has a low water absorption ratio and a high glass transition temperature, and has a high elastic modulus at high temperature. A resin composition according to the present invention includes a specific maleimide compound (A); a cyanate ester compound (B); a non-halogen epoxy resin (C); and an inorganic filler (D).

摘要翻译： 本发明的目的是提供一种不使用卤化物或磷化合物的印刷电路板用树脂组合物，预浸料坯，层压体和覆盖金属箔的层叠体，其中，高分子量 阻燃性，吸水率低，玻璃化转变温度高，高温弹性模量高。 根据本发明的树脂组合物包括特定的马来酰亚胺化合物（A）; 氰酸酯化合物（B）; 非卤素环氧树脂（C）; 和无机填料（D）。

公开(公告)号：US20130136930A1

公开(公告)日：2013-05-30

申请号：US13816008

申请日：2011-08-29

申请人： Yoshihiro Kato ,  Takaaki Ogashiwa ,  Hiroshi Takahashi ,  Tetsuro Miyahira

发明人： Yoshihiro Kato ,  Takaaki Ogashiwa ,  Hiroshi Takahashi ,  Tetsuro Miyahira

IPC分类号： C08K3/00

CPC分类号： C08J5/24 ,  B32B5/26 ,  B32B15/092 ,  B32B15/14 ,  B32B2262/10 ,  B32B2307/3065 ,  B32B2307/58 ,  B32B2307/734 ,  B32B2457/08 ,  C08J2363/00 ,  C08J2363/04 ,  C08K3/105 ,  C08K3/26 ,  C08K2003/267 ,  H05K1/0373 ,  H05K2201/012 ,  H05K2201/0209 ,  Y10T428/31529 ,  C08L63/00

摘要： There are provided a resin composition for printed wiring boards that has a low coefficient of thermal expansion in a plane direction, has excellent heat resistance and drilling workability, and, at the same time, can retain a high level of flame retardance, a prepreg prepared using the resin composition, and a laminated sheet and a metal foil-laminated sheet prepared using the prepreg. The resin composition comprises (A) an inorganic filler that is a mixture composed of a hydromagnesite represented by formula (1): xMgCO3.yMg(OH)2.zH2O  (1) wherein x:y:z is 4:1:4, 4:1:5, 4:1:6, 4:1:7, 3:1:3, or 3:1:4 and huntite; (B) an epoxy resin; and (C) a curing agent.

摘要翻译： 提供了一种在平面方向上具有低热膨胀系数的印刷电路板用树脂组合物，具有优异的耐热性和钻孔加工性，并且同时可以保持高水平的阻燃性，制备预浸料 使用该树脂组合物，以及层压片和使用该预浸料制备的金属箔层压片。 树脂组合物包含（A）无机填料，其是由式（1）表示的氢化镁石组成的混合物：xMgCO 3 y Mg（OH）2·zH 2 O（1）其中x：y：z为4：1：4， 4：1：5,4：1：6,4：1：7,3：1：3或3：1：4和hiteite; （B）环氧树脂; 和（C）固化剂。

公开(公告)号：US20130014984A1

公开(公告)日：2013-01-17

申请号：US13536560

申请日：2012-06-28

申请人： Hironori Iida ,  Shun Yamanoi ,  Machiko Minatoya ,  Seiichiro Tabata ,  Shinichiro Yamada ,  Masayoshi Kanno ,  Masakazu Mitsugi ,  Yoshihiro Kato

发明人： Hironori Iida ,  Shun Yamanoi ,  Machiko Minatoya ,  Seiichiro Tabata ,  Shinichiro Yamada ,  Masayoshi Kanno ,  Masakazu Mitsugi ,  Yoshihiro Kato

IPC分类号： H05K9/00 ,  C09K3/00

CPC分类号： H05K1/0218 ,  C01B32/00 ,  H01Q17/002 ,  H05K9/0083 ,  H05K2201/0116 ,  H05K2201/0323 ,  H05K2201/0715

摘要： Provided is an electromagnetic wave absorber, including a base material and a porous carbon material containing, as a raw material, a plant-based material having a silicon content of 5% by mass or more, in which the porous carbon material has a specific surface area value as measured by the nitrogen BET method of 400 m2/g or more, a silicon content of 1% by mass or less, a pore volume as measured by the BJH method of 0.2 cm3/g or more, and a pore volume as measured by the MP method of 0.2 cm3/g or more, or a total pore volume of pores each having a diameter in the range from 1×10−9 m to 5×10−7 m as measured by the Non Localized Density Functional Theory of 1.0 cm3/g or more.

摘要翻译： 本发明提供一种电磁波吸收体，其特征在于，包括基材和多孔碳材料，所述多孔碳材料含有硅含量为5质量％以上的植物性材料作为原料，其中所述多孔碳材料具有比表面积 通过氮BET法测定的面积值为400m 2 / g以上，硅含量为1质量％以下，通过BJH法测定的孔体积为0.2cm 3 / g以上，孔体积为 通过MP法测量为0.2cm 3 / g以上，或通过非局部密度泛函理论测量的孔径的总孔体积为1×10 -9 m至5×10 -7 m 为1.0cm 3 / g以上。

公开(公告)号：US20120009836A1

公开(公告)日：2012-01-12

申请号：US13202829

申请日：2010-02-16

申请人： Masayoshi Ueno ,  Yoshihiro Kato ,  Takeshi Nobukuni

发明人： Masayoshi Ueno ,  Yoshihiro Kato ,  Takeshi Nobukuni

IPC分类号： B32B5/02

CPC分类号： C08J5/24 ,  B32B15/08 ,  B32B15/14 ,  B32B15/20 ,  B32B17/04 ,  B32B27/04 ,  B32B27/38 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/101 ,  B32B2264/10 ,  B32B2264/101 ,  B32B2264/102 ,  B32B2307/3065 ,  B32B2307/546 ,  B32B2307/72 ,  B32B2307/732 ,  B32B2457/08 ,  C08J2363/00 ,  D03D13/008 ,  D03D15/0011 ,  D10B2505/02 ,  H05K1/0366 ,  H05K2201/029 ,  Y10T442/20

摘要： This invention relates to a prepreg having a low thermal expansion coefficient in plane direction and a high rigidity, and more particularly to a prepreg comprising a glass cloth (A), and a resin composition including a cyanate ester resin (B), a non-halogen based epoxy resin (C) and an inorganic filler (D), wherein the glass cloth (A) is characterized that when the weight per 1 m2 is W (g/m2), the thickness is t (μm), the number of warp threads per inch is X (thread/inch), and the number of weft threads per inch is Y (thread/inch), the total of X and Y is 150 to 240, t is 17 to 35, and the value of W/t as the apparent density is 1.1 to 1.5, and that the volume fraction of the glass cloth (A) in the prepreg is 32% to 42%.

摘要翻译： 本发明涉及一种在平面方向上具有低热膨胀系数和高刚性的预浸料，更具体地涉及包含玻璃布（A）的预浸料，以及包含氰酸酯树脂（B），非水性树脂 卤素系环氧树脂（C）和无机填料（D），其中，玻璃布（A）的特征在于，当1m 2的重量为W（g / m 2）时，厚度为t（μm） 每英寸经纱为X（螺纹/英寸），每英寸纬纱数为Y（螺纹/英寸），X和Y的总和为150〜240，t为17〜35，W / t，表观密度为1.1〜1.5，玻璃布（A）在预浸料中的体积分数为32〜42％。