摘要:
Data pin mapping and delay training techniques. Valid values are detected on a command/address (CA) bus at a memory device. A first part of the pattern (high phase) is transmitted via a first subset of data pins on the memory device in response to detecting values on the CA bus; a second part of the pattern (low phase) is transmitted via a second subset of data pins on the memory device in response to detecting values on the CA bus. Signals are sampled at the memory controller from the data pins while the CA pattern is being transmitted to obtain a first memory device's sample (high phase) and the second memory device's sample (low phase) by analyzing the first and the second subset of sampled data pins. The analysis combined with the knowledge of the transmitted pattern on the CA bus leads to finding the unknown data pins mapping. Varying the transmitted CA patterns and the resulting feedbacks sampled on memory controller data signals allows CA/CTRL/CLK signals delay training with and without priory data pins mapping knowledge.
摘要:
REUT (Robust Electrical Unified Testing) for memory links is introduced which speeds testing, tool development, and debug. In addition it provides training hooks that have enough performance to be used by BIOS to train parameters and conditions that have not been possible with past implementations. Address pattern generation circuitry is also disclosed.
摘要:
A memory subsystem includes logic buffer coupled to a command bus between a memory controller and a memory device. The logic buffer detects that the memory controller places the command bus in a state where the memory controller does not drive the command bus with a valid executable memory device command. In response to detecting the state of the command bus, the logic buffer generates a signal pattern and injects the signal pattern on the command bus after a scheduler of the memory controller to drive the command bus with the signal pattern.
摘要:
Power gating control architectures. A memory device having at least a memory array and input/output (I/O) lines terminated on the memory device with termination circuitry coupled to receive a termination supply voltage (Vtt) with power gating circuitry to selectively gate the termination supply voltage in response to a power gating control signal (VttControl) is coupled with a processing core coupled with the memory device, the processing core to selectively assert and deassert the VttControl signal.
摘要:
Embodiments of the invention are generally directed to systems, methods, and apparatuses for suppressing power supply noise using data scrambling in double data rate memory systems. In some embodiments, an integrated circuit includes a transmit data path to transmit data to one or more memory devices. The transmit data path may include scrambling logic to generate, in parallel, N pseudo random outputs that are uncorrelated with each other. The output data and the pseudo random outputs are input to XOR logic. The transmit data path transmits the output the of XOR logic which has a substantially white frequency spectrum. Other embodiments are described and claimed.
摘要:
A memory subsystem can test a memory device in situ, testing the performance of parameters of operation the device in the system it is built into during production. Thus, the system can detect the specific values that will work for one or more operating parameters for the memory device in actual runtime. A test component embedded in the memory subsystem can perform a stress test and identify specific bits or lines of memory that experience failure under one or more stresses. The system can then map out the failed bits or lines to prevent the bits/lines from being used in runtime of the system.
摘要:
A memory subsystem includes a test signal generator of a memory controller that generates a test data signal in response to the memory controller receiving a test transaction. The test transaction indicates one or more I/O operations to perform on an associated memory device. The test signal generator can generate data signals from various different pattern generators. The memory controller scheduler schedules the test data signal pattern, and sends it to the memory device. The memory device can then execute I/O operation(s) to implement the test transaction. The memory controller can read back data written to a specific address of the memory device and compare the read back data with expected data. When the read back data and the expected data do not match, the memory controller can record an error. The error can include the specific address of the error, the specific data, and/or encoded data.
摘要:
Circuitry to provide a supply voltage. A voltage regulator is coupled to receive a target reference signal. The voltage regulator generates a supply voltage (Vtt) and is coupled to receive the supply voltage as an input signal. An upper limit comparator receives an upper limit voltage signal that is higher than the target reference voltage signal and the supply voltage to generate a “too high” signal when the supply voltage exceeds an upper threshold. A lower limit comparator receives a lower limit voltage signal that is lower than the target reference voltage signal and the supply voltage to generate a “too low” signal when the supply voltage is below a lower threshold. A pull up current source is coupled to pull the supply voltage up in response to the too low signal. A pull down current source is coupled to pull the supply voltage down in response to the too high signal.
摘要:
A device with an I/O interface includes a replica clock distribution path matched to a clock distribution path of an unmatched receiver circuit. The device can monitor changes in delay in the replica path, and adjust delay in the real clock distribution path in response to the delay changes detected in the replica path. The receiver circuit includes a data path and a clock distribution network in an unmatched configuration. A ring oscillator circuit includes a replica clock distribution network matched to the real clock distribution network. Thus, delay changes detected for the replica clock distribution network indicates a change in delay in the real clock distribution network, which can be compensated accordingly.
摘要:
A transmission line interface circuit includes a voltage regulator to control a voltage swing of the transmission line interface circuit for signal transmission. The transmission line interface circuit includes complementary driver elements, including a p-type driver element to pull up the transmission line in response to a logic high, and an n-type driver element to pull down the transmission line in response to a logic low. The voltage regulator is coupled between one of the driver elements and a respective voltage reference to reduce a voltage swing of the transmission line interface circuit.