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公开(公告)号：US10978276B2
公开(公告)日：2021-04-13
申请号：US16749631
申请日：2020-01-22
Applicant: APPLIED MATERIALS, INC.
Inventor： Bharath Swaminathan , Hanbing Wu , John Mazzocco
Abstract: Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.
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公开(公告)号：US10704139B2
公开(公告)日：2020-07-07
申请号：US15482242
申请日：2017-04-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Rongjun Wang , Hanbing Wu
IPC: C23C14/34 , C23C14/54 , C23C14/14 , C23C14/08 , C23C14/18 , H01J37/34 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.
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公开(公告)号：US10468238B2
公开(公告)日：2019-11-05
申请号：US15240927
申请日：2016-08-18
Applicant: APPLIED MATERIALS, INC.
Inventor： Anantha K. Subramani , Hanbing Wu , Wei W. Wang , Ashish Goel , Srinivas Guggilla , Lavinia Nistor
Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.
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公开(公告)号：US11600476B2
公开(公告)日：2023-03-07
申请号：US17503994
申请日：2021-10-18
Applicant: Applied Materials, Inc.
Inventor： Anantha K. Subramani , Deepak Jadhav , Ashish Goel , Hanbing Wu , Prashanth Kothnur , Chi Hong Ching
Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
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公开(公告)号：US20180163306A1
公开(公告)日：2018-06-14
申请号：US15839018
申请日：2017-12-12
Applicant: Applied Materials, Inc.
Inventor： Bharath Swaminathan , John Mazzocco , Hanbing Wu , Ashish Goel , Anantha K. Subramani
IPC: C23C16/46 , H01L21/687 , H01L21/67 , C23C16/455
CPC classification number: C23C16/466 , C23C16/45527 , C23C16/4586 , H01L21/67098 , H01L21/67109 , H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H01L21/68785
Abstract: A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.
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Patent Agency Ranking
公开(公告)号：US09673074B2
公开(公告)日：2017-06-06
申请号：US14189664
申请日：2014-02-25
Applicant: Applied Materials, Inc.
Inventor： Hanbing Wu , Anantha K. Subramani , Wei W. Wang , Aaron Muir Hunter
IPC: H01L21/67 , H01L21/687 , G01J5/00 , G01J5/08
CPC classification number: H01L21/67248 , G01J5/0007 , G01J5/0818 , H01L21/68742
Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.
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公开(公告)号：US11043364B2
公开(公告)日：2021-06-22
申请号：US15614595
申请日：2017-06-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Hanbing Wu , Anantha K. Subramani , Ashish Goel , Deepak Jadhav , Rongjun Wang , Chi Hong Ching
IPC: H01J37/34 , H01J37/32 , C23C14/34 , C23C16/458
Abstract: Embodiments of a process kit for use in a multi-cathode process chamber are disclosed herein. In some embodiments, a process kit includes a rotatable shield having a base, a conical portion extend downward and radially outward from the base, and a collar portion extending radially outward from a bottom of the conical portion; an inner deposition ring having a leg portion, a flat portion extending radially inward from the leg portion, a first recessed portion extending radially inward from the flat portion, and a first lip extending upward from an innermost section of the first recessed portion; and an outer deposition ring having a collar portion, an upper flat portion disposed above and extending radially inward from the collar portion, a second recessed portion extending inward from the upper flat portion, and a second lip extending upward from an innermost section of the second recessed portion.
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公开(公告)号：US11011357B2
公开(公告)日：2021-05-18
申请号：US15890694
申请日：2018-02-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Hanbing Wu , Anantha K. Subramani , Ashish Goel , Xiaodong Wang , Wei W. Wang , Rongjun Wang , Chi Hong Ching
Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.
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公开(公告)号：US09620339B2
公开(公告)日：2017-04-11
申请号：US13836328
申请日：2013-03-15
Applicant: APPLIED MATERIALS, INC.
Inventor： Anantha K. Subramani , Tza-Jing Gung , Prashanth Kothnur , Hanbing Wu
CPC classification number: C23C14/3414 , C23C14/3407 , C23C14/35 , H01J37/34 , H01J37/3402 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3426 , H01J37/345
Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.
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10.发明申请公开(公告)号：US20150279635A1
公开(公告)日：2015-10-01
申请号：US14606367
申请日：2015-01-27
Applicant: Applied Materials, Inc.
Inventor： Anantha K. Subramani , Deepak Jadhav , Ashish Goel , Hanbing Wu , Prashanth Kothnur , Chi Hong Ching
CPC classification number: H01J37/3408 , C23C16/34 , C23C16/405 , H01J37/3417 , H01J37/3435 , H01J37/3447
Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
Abstract translation: 沉积系统及其操作方法包括：阴极; 阴极下方的护罩; 在阴极下面的旋转屏蔽件，用于使阴极暴露于护罩并通过旋转屏蔽的屏蔽孔; 以及用于产生在所述旋转底座上形成载体的材料的旋转底座，其中所述材料具有小于所述材料和所述阴极的厚度的1％的不均匀约束，所述材料和所述阴极在所述阴极和所述载体之间具有角度。
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