公开(公告)号：US12014925B2

公开(公告)日：2024-06-18

申请号：US17330035

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  C23C16/30 ,  C23C16/32 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C23C16/30 ,  C23C16/32 ,  C23C16/50 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/02115 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02205 ,  H01L21/31122 ,  H01L21/31144

Abstract: Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20230175120A1

公开(公告)日：2023-06-08

申请号：US18062010

申请日：2022-12-05

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono ,  Jiteng Gu ,  Kian Ping Loh

IPC: C23C16/27 ,  H01J37/32

CPC classification number: C23C16/274 ,  C23C16/279 ,  H01J37/32192 ,  H01J2237/3321

Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.

公开(公告)号：US20220384188A1

公开(公告)日：2022-12-01

申请号：US17330035

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/32

Abstract: Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220238531A1

公开(公告)日：2022-07-28

申请号：US17720465

申请日：2022-04-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-Yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11335690B2

公开(公告)日：2022-05-17

申请号：US17147001

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US20220127721A1

公开(公告)日：2022-04-28

申请号：US17078474

申请日：2020-10-23

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Zhongxin Chen ,  Gu Jiteng ,  Eswaranand Venkatasubramanian ,  Loh Kian Ping ,  Abhijit Basu Mallick ,  John Sudijono

IPC: C23C16/27 ,  H01L21/02 ,  C23C16/54 ,  C23C16/455 ,  C23C16/511

Abstract: Methods of depositing a diamond layer are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which nanocrystalline diamond deposited on a substrate, wherein the processing methods result in a nanocrystalline diamond hard mask having high hardness.

公开(公告)号：US11043375B2

公开(公告)日：2021-06-22

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Eswaranand Venkatasubramanian ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Gonzalo Monroy ,  Lucy Zhiping Chen ,  Yue Guo

IPC: C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  C23C16/44 ,  C23C14/34 ,  C23C14/06 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electron emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20210043450A1

公开(公告)日：2021-02-11

申请号：US17069008

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.

公开(公告)号：US20180354804A1

公开(公告)日：2018-12-13

申请号：US16002222

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: C01B32/28 ,  C01B32/26 ,  H01L21/308

CPC classification number: H01L21/3086 ,  C01B32/25 ,  C01B32/26 ,  C01B32/28 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31144

Abstract: Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

公开(公告)号：US20170114459A1

公开(公告)日：2017-04-27

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/762 ,  C23C16/02

CPC classification number: C23C16/45527 ,  C23C16/02 ,  C23C16/04 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.