公开(公告)号：US20030127427A1

公开(公告)日：2003-07-10

申请号：US10041550

申请日：2002-01-07

Applicant: Applied Materials, Inc.

Inventor： Zheng Yuan ,  Steve Ghanayem ,  Randhir P.S. Thakur

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: H01L21/76814 ,  C03C15/00 ,  H01L21/02043 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layers.

Abstract translation: 一种在第一金属化层和硅衬底之间的集成电路中形成接触的方法。 在一个实施例中，该方法包括在硅衬底上形成前金属介电层，蚀刻通过前金属介电层的接触孔，然后在接触孔的外表面上形成薄的氮化硅层。 氮化硅层减少过蚀刻，否则当通过预清洗工艺从接触孔中的硅界面除去氧化积聚时，可能会发生过蚀刻。 在预清洗工艺之后，接触孔然后用一种或多种导电材料填充。 在各种实施例中，通过将接触孔暴露于氮等离子体，通过化学气相沉积工艺沉积该层并通过原子层沉积工艺沉积该层来形成氮化硅层。 在其它实施例中，该方法适用于通过金属间电介质层形成通孔。

公开(公告)号：US20030224217A1

公开(公告)日：2003-12-04

申请号：US10278179

申请日：2002-10-21

Applicant: Applied Materials, Inc.

Inventor： Jeong Soo Byun ,  Alfred W. Mak ,  Hui Zhang ,  Hyungsuk Alexander Yoon ,  Avgerinos V. Gelatos ,  Robert L. Jackson ,  Ming Xi ,  Randhir P.S. Thakur

IPC: B32B018/00

CPC classification number: H01L21/76846 ,  C04B35/58007 ,  C04B2235/421 ,  C23C16/38 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76864 ,  H01L28/75

Abstract: A process for treating refractory metal-boron layers deposited by atomic layer deposition resulting in the formation of a ternary amorphous refractory metal-nitrogen-boron film is disclosed. The resulting ternary film remains amorphous following thermal annealing at temperatures up to 800null C. The ternary films are formed following thermal annealing in a reactive nitrogen-containing gas. Subsequent processing does not disrupt the amorphous character of the ternary film. arrangement where a blended solution is supplied to a remote point of use.

Abstract translation: 公开了一种用于处理通过原子层沉积沉积的难熔金属 - 硼层的方法，导致形成三元非晶态难熔金属 - 氮 - 硼膜。 所得到的三元膜在温度高达800℃的热退火之后保持无定形。在反应性含氮气体中热退火后形成三元膜。 随后的处理不会破坏三元膜的无定形特性。 将混合溶液供应到远程使用点的布置。

公开(公告)号：US20030172872A1

公开(公告)日：2003-09-18

申请号：US10352257

申请日：2003-01-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Randhir P.S. Thakur ,  Alfred W. Mak ,  Ming Xi ,  Walter Benjamin Glenn ,  Ahmad A. Khan ,  Ayad A. Al-Shaikh ,  Avgerinos V. Gelatos ,  Salvador P. Umotoy

IPC: C23C016/00

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45582 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/6719

Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract translation: 一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。