公开(公告)号：US11959167B2

公开(公告)日：2024-04-16

申请号：US17834633

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

IPC: C23C16/16 ,  C23C16/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768

CPC classification number: C23C16/16 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/18 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US11282745B2

公开(公告)日：2022-03-22

申请号：US16396744

申请日：2019-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang-Ho Yu ,  Seshadri Ganguli

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/02 ,  H01L21/285

Abstract: Methods and apparatus for filling a high aspect ratio feature such as a via with ruthenium including: contacting a ruthenium liner with a ruthenium precursor within a high aspect ratio feature such as a via, wherein the ruthenium liner has a top surface within a high aspect ratio feature such as a via, and wherein the top surface comprises a halogen material such as iodine or bromine. Embodiments also relate to selective deposition of ruthenium within a high-aspect ratio feature such as a via.

公开(公告)号：US11075276B2

公开(公告)日：2021-07-27

申请号：US16594596

申请日：2019-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Yongjing Lin ,  Shih Chung Chen ,  Naomi Yoshida ,  Lin Dong ,  Liqi Wu ,  Rongjun Wang ,  Steven Hung ,  Karla Bernal Ramos ,  Yixiong Yang ,  Wei Tang ,  Sang-Ho Yu

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

公开(公告)号：US11384429B2

公开(公告)日：2022-07-12

申请号：US15598687

申请日：2017-05-18

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

IPC: C23C16/16 ,  H01L21/324 ,  H01L21/768 ,  C23C16/02 ,  C23C16/18 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US10269633B2

公开(公告)日：2019-04-23

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L29/66

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US11421318B2

公开(公告)日：2022-08-23

申请号：US16398782

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jacqueline Wrench ,  Liqi Wu ,  Hsiang Ning Wu ,  Paul Ma ,  Sang-Ho Yu ,  Fuqun Grace Vasiknanonte ,  Nobuyuki Sasaki

IPC: C23C16/12 ,  H01L21/02

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.