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    Methods to fabricate chamber component holes using laser drilling
    2.
    发明授权
    Methods to fabricate chamber component holes using laser drilling 有权

    公开(公告)号：US11819948B2

    公开(公告)日：2023-11-21

    申请号：US17392248

    申请日：2021-08-02

    Applicant: Applied Materials, Inc.

    Inventor： Sumit Agarwal ,  Timothy Joseph Franklin ,  Joseph F. Sommers

    IPC: B23K26/382

    CPC classification number: B23K26/382

    Abstract: Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

    FABRICATION OF A HIGH TEMPERATURE SHOWERHEAD
    3.
    发明申请
    FABRICATION OF A HIGH TEMPERATURE SHOWERHEAD 有权

    公开(公告)号：US20220333244A1

    公开(公告)日：2022-10-20

    申请号：US17235258

    申请日：2021-04-20

    Applicant: Applied Materials, Inc.

    Inventor： Sumit Agarwal ,  Katherine Woo ,  Shawyon Jafari ,  Jian Li ,  Chidambara A. Ramalingam

    IPC: C23C16/455 ,  B22D30/00

    Abstract: Exemplary semiconductor processing chamber showerheads include an inner core region. The inner core region may define a plurality of apertures. The showerheads may include an outer core region disposed about an outer periphery of the inner core region. The outer core region may define an annular channel. The showerheads may include a heating element disposed within the annular channel. The showerheads may include an annular liner disposed about an outer periphery of the outer core region. The inner core region and the outer core region may include an aluminum alloy. The annular liner may have a lower thermal conductivity than the aluminum alloy.

    Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications
    9.
    发明授权
    Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications 有权
    循环蚀刻用于半导体应用的互连结构的金属层的方法

    公开(公告)号：US09359679B2

    公开(公告)日：2016-06-07

    申请号：US14505587

    申请日：2014-10-03

    Applicant: Applied Materials, Inc.

    Inventor： Sumit Agarwal ,  Bradley J. Howard

    IPC: C23F17/00 ,  C23F1/12 ,  C23F4/04 ,  C23F4/00 ,  C23F1/00 ,  C23F1/02 ,  H01L21/3065 ,  H01L21/3213

    CPC classification number: C23F17/00 ,  C23F1/00 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  C23F4/04 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32136

    Abstract: Embodiments of the present disclosure provide methods for etching a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one example, a method of patterning a metal layer on a substrate includes supplying a first etching gas mixture comprising a hydro-carbon gas and a hydrogen containing gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, supplying a second gas mixture comprising the hydrogen containing gas to a surface of the etched metal layer disposed on the substrate, and supplying a third gas mixture comprising an inert gas into the processing chamber to sputter clean the surface of the etched metal layer.

    Abstract translation: 本公开的实施例提供了用于蚀刻诸如铜层的金属层以在半导体器件中形成互连结构的方法。 在一个示例中，在衬底上图案化金属层的方法包括将包含氢碳气体和含氢气体的第一蚀刻气体混合物供应到其中设置有衬底的处理室中，所述衬底具有设置在其上的金属层 将包含所述含氢气体的第二气体混合物供应到设置在所述基板上的所述蚀刻金属层的表面，以及将包含惰性气体的第三气体混合物供应到所述处理室中以溅射所述蚀刻的金属层的表面。

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