Pulsed valve manifold for atomic layer deposition

    公开(公告)号:US10266946B2

    公开(公告)日:2019-04-23

    申请号:US15400793

    申请日:2017-01-06

    申请人: ASM AMERICA, INC.

    摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

    Pulsed valve manifold for atomic layer deposition

    公开(公告)号:US10370761B2

    公开(公告)日:2019-08-06

    申请号:US15400793

    申请日:2017-01-06

    申请人: ASM AMERICA, INC.

    摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

    PROCESS FEED MANAGEMENT FOR SEMICONDUCTOR SUBSTRATE PROCESSING
    5.
    发明申请
    PROCESS FEED MANAGEMENT FOR SEMICONDUCTOR SUBSTRATE PROCESSING 审中-公开
    半导体基板加工过程进料管理

    公开(公告)号:US20150187568A1

    公开(公告)日:2015-07-02

    申请号:US14660755

    申请日:2015-03-17

    申请人: ASM America, Inc.

    IPC分类号: H01L21/02

    摘要: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

    摘要翻译: 提供了与管理半导体工艺模块的工艺进料条件有关的实施例。 在一个示例中,提供了一种用于半导体处理模块的气体通道板。 示例性气体通道板包括热交换表面,其包括通过中间间隔彼此分离的多个热交换结构。 示例性气体通道板还包括热交换流体引导板支撑表面,用于在多个热交换结构之上支撑热交换流体导向板,使得多个热交换结构的至少一部分与热交换流体间隔开 导演板。