公开(公告)号：US20250037988A1

公开(公告)日：2025-01-30

申请号：US18914437

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20230260784A1

公开(公告)日：2023-08-17

申请号：US18140926

申请日：2023-04-28

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Chiyu Zhu

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02565 ,  H01L21/0262 ,  H01L21/0257 ,  H01L21/28194 ,  H01L21/0228 ,  C23C16/407 ,  C23C16/45527 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02592

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US20190287769A1

公开(公告)日：2019-09-19

申请号：US15923834

申请日：2018-03-16

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20230290613A1

公开(公告)日：2023-09-14

申请号：US18179187

申请日：2023-03-06

Applicant: ASM IP HOLDING B.V.

Inventor： Varun Sharma ,  Tom Blomberg

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J37/32357 ,  H01J2237/182 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A semiconductor processing system for providing a remotely generated excited species of a processing gas to a reactor. The semiconductor processing system comprises a remotely positioned plasma generator in fluid communication with a plasm source vessel and a gas line to convey an excited species generated in the plasma generator to the reactor. The gas line may be a double-walled pipe comprising an outer pipe and a perforated an inner pipe or a gas line to which DC bias voltage is applied.

公开(公告)号：US11114283B2

公开(公告)日：2021-09-07

申请号：US15923834

申请日：2018-03-16

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20170154778A1

公开(公告)日：2017-06-01

申请号：US15429924

申请日：2017-02-10

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US20160196977A1

公开(公告)日：2016-07-07

申请号：US14987413

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US11658030B2

公开(公告)日：2023-05-23

申请号：US16713311

申请日：2019-12-13

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Chiyu Zhu

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02565 ,  C23C16/401 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/28194 ,  H01L21/02592

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US20210358721A1

公开(公告)日：2021-11-18

申请号：US17385997

申请日：2021-07-27

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20180286675A1

公开(公告)日：2018-10-04

申请号：US15917262

申请日：2018-03-09

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Chiyu Zhu

IPC: H01L21/02

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.