公开(公告)号：US20170301542A1

公开(公告)日：2017-10-19

申请号：US15132091

申请日：2016-04-18

Applicant: ASM IP Holding B.V. ,  IMEC VZW

Inventor： Jan Willem MAES ,  Werner KNAEPEN ,  Roel GRONHEID ,  Arjun Singh

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  G03F7/0002 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

公开(公告)号：US10204782B2

公开(公告)日：2019-02-12

申请号：US15132091

申请日：2016-04-18

Applicant: ASM IP Holding B.V. ,  IMEC VZW

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Roel Gronheid ,  Arjun Singh

IPC: H01L21/33 ,  H01L21/033 ,  G03F7/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/32

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

公开(公告)号：US10741394B2

公开(公告)日：2020-08-11

申请号：US16254841

申请日：2019-01-23

Applicant: ASM IP Holding B.V. ,  IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Roel Gronheid ,  Arjun Singh

IPC: H01L21/00 ,  H01L21/033 ,  G03F7/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/32

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

公开(公告)号：US10303048B2

公开(公告)日：2019-05-28

申请号：US15433397

申请日：2017-02-15

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D

Inventor： Boon Teik Chan ,  Arjun Singh ,  Safak Sayan

IPC: B32B7/00 ,  G03F7/00 ,  H01L21/033 ,  H01L21/027

Abstract: The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.

公开(公告)号：US10824078B2

公开(公告)日：2020-11-03

申请号：US15813913

申请日：2017-11-15

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Roel Gronheid ,  Arjun Singh ,  Werner Knaepen

IPC: G03F7/20 ,  G03F7/42 ,  G03F7/004 ,  G03F7/40 ,  G03F7/38 ,  G03F7/00 ,  G03F7/09

Abstract: An example embodiment relates to a method for making a mask layer. The method may include providing a patterned layer on a substrate, the patterned layer including at least a first set of lines of an organic material of a first nature, the lines having a line height, a first line width roughness, and being separated either by voids or by a material of a second nature. The method may further include infiltrating at least a top portion of the first set of lines with a metal or ceramic material. The method may further include removing the organic material by oxidative plasma etching, thereby forming a second set of lines of metal or ceramic material on the substrate, the second set of lines having a second line width roughness, smaller than the first line width roughness.

公开(公告)号：US10079145B2

公开(公告)日：2018-09-18

申请号：US15292328

申请日：2016-10-13

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Boon Teik Chan ,  Arjun Singh

IPC: H01L21/47 ,  H01L21/027 ,  H01L29/06 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L21/0273 ,  G03F7/0002 ,  H01L21/02356 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/47 ,  H01L29/0692

Abstract: The present disclosure relates to a method for pattern formation on a substrate. An example embodiment includes a method for pattern formation. The method includes providing a photoresist layer on a composite substrate. The method also includes patterning the photoresist layer by lithography to define a plurality of parallel stripe photoresist structures. The method further includes providing a block copolymer on and along the composite substrate, in between the parallel stripe photoresist structures. The block copolymer includes a first component and a second component. The method additionally includes subjecting the block copolymer to predetermined conditions to cause phase separation of the first component and the second component. In addition, the method includes performing a sequential infiltration synthesis process. Still further, the method includes selectively removing the parallel stripe photoresist structures. Additionally, the method includes defining a core stripe structure. Even further, the method includes performing a self-aligned multiple patterning process.

公开(公告)号：US20180173109A1

公开(公告)日：2018-06-21

申请号：US15813913

申请日：2017-11-15

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Roel Gronheid ,  Arjun Singh ,  Werner Knaepen

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/42

CPC classification number: G03F7/70625 ,  G03F7/0002 ,  G03F7/0047 ,  G03F7/094 ,  G03F7/38 ,  G03F7/40 ,  G03F7/423 ,  G03F7/427

Abstract: An example embodiment relates to a method for making a mask layer. The method may include providing a patterned layer on a substrate, the patterned layer including at least a first set of lines of an organic material of a first nature, the lines having a line height, a first line width roughness, and being separated either by voids or by a material of a second nature. The method may further include infiltrating at least a top portion of the first set of lines with a metal or ceramic material. The method may further include removing the organic material by oxidative plasma etching, thereby forming a second set of lines of metal or ceramic material on the substrate, the second set of lines having a second line width roughness, smaller than the first line width roughness.

公开(公告)号：US20170170007A1

公开(公告)日：2017-06-15

申请号：US15292328

申请日：2016-10-13

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Boon Teik Chan ,  Arjun Singh

IPC: H01L21/027 ,  H01L21/308 ,  H01L29/06

CPC classification number: H01L21/0273 ,  G03F7/0002 ,  H01L21/02356 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/47 ,  H01L29/0692

Abstract: The present disclosure relates to a method for pattern formation on a substrate. An example embodiment includes a method for pattern formation. The method includes providing a photoresist layer on a composite substrate. The method also includes patterning the photoresist layer by lithography to define a plurality of parallel stripe photoresist structures. The method further includes providing a block copolymer on and along the composite substrate, in between the parallel stripe photoresist structures. The block copolymer includes a first component and a second component. The method additionally includes subjecting the block copolymer to predetermined conditions to cause phase separation of the first component and the second component. In addition, the method includes performing a sequential infiltration synthesis process. Still further, the method includes selectively removing the parallel stripe photoresist structures. Additionally, the method includes defining a core stripe structure. Even further, the method includes performing a self-aligned multiple patterning process.

公开(公告)号：US20170242335A1

公开(公告)日：2017-08-24

申请号：US15433397

申请日：2017-02-15

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D

Inventor： Boon Teik Chan ,  Arjun Singh ,  Safak Sayan

IPC: G03F7/00 ,  H01L21/033

CPC classification number: G03F7/0002 ,  H01L21/0271 ,  H01L21/0337

Abstract: The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.

公开(公告)号：US09899220B2

公开(公告)日：2018-02-20

申请号：US15289550

申请日：2016-10-10

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D

Inventor： Boon Teik Chan ,  Zheng Tao ,  Arjun Singh ,  Jan Doise

IPC: H01L21/00 ,  H01L21/033

CPC classification number: H01L21/0338 ,  G03F7/0002 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31144

Abstract: A method for patterning a substrate is disclosed. The method includes applying a first directed self-assembly (DSA) patterning process that defines a first patterned layer on top of the substrate. The pattern of the first patterned layer is to be transferred into the substrate. The method also includes applying a planarizing layer on top of the first patterned layer. The method further includes applying a second DSA patterning process that defines a second patterned layer on top of the planarizing layer, thereby not patterning the planarizing layer. A pattern of the second patterned layer is to be transferred into the substrate. Projections of the pattern of the second patterned layer and the pattern of the first patterned layer on the substrate have no overlap. Additionally, the method includes transferring the patterns defined by the first patterned layer and the second patterned layer into the substrate.