公开(公告)号：US10204782B2

公开(公告)日：2019-02-12

申请号：US15132091

申请日：2016-04-18

Applicant: ASM IP Holding B.V. ,  IMEC VZW

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Roel Gronheid ,  Arjun Singh

IPC: H01L21/33 ,  H01L21/033 ,  G03F7/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/32

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

公开(公告)号：US20190155159A1

公开(公告)日：2019-05-23

申请号：US16094119

申请日：2017-04-07

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW

Inventor： Werner Knaepen ,  Jan Willem Maes ,  Maarten Stokhof ,  Roel Gronheid ,  Hari Pathangi Sriraman

IPC: G03F7/16

Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.

公开(公告)号：US10741394B2

公开(公告)日：2020-08-11

申请号：US16254841

申请日：2019-01-23

Applicant: ASM IP Holding B.V. ,  IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Roel Gronheid ,  Arjun Singh

IPC: H01L21/00 ,  H01L21/033 ,  G03F7/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/32

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

公开(公告)号：US10551741B2

公开(公告)日：2020-02-04

申请号：US16094119

申请日：2017-04-07

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW

Inventor： Werner Knaepen ,  Jan Willem Maes ,  Maarten Stokhof ,  Roel Gronheid ,  Hari Pathangi Sriraman

IPC: G03F7/16 ,  H01L21/027 ,  H01L21/67 ,  H01L21/768 ,  H01L51/00 ,  H01L21/469 ,  H01L21/31 ,  B05D3/04 ,  B05D3/02

Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.

公开(公告)号：US20240096711A1

公开(公告)日：2024-03-21

申请号：US18522867

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/823842 ,  H01L27/092 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11885020B2

公开(公告)日：2024-01-30

申请号：US17554009

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Jan Willem Maes ,  Elina Färm ,  Saima Ali ,  Antti Niskanen

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/54 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45559 ,  C23C16/54

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

公开(公告)号：US11885014B2

公开(公告)日：2024-01-30

申请号：US17849077

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/34 ,  C23C16/458 ,  C23C16/45527

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

公开(公告)号：US20220384197A1

公开(公告)日：2022-12-01

申请号：US17824774

申请日：2022-05-25

Applicant: ASM IP Holding B.V.

Inventor： Johanna Henrica Deijkers ,  Adriaan Jacobus Martinus Mackus ,  Ageeth Anke Bol ,  Wilhelmus M. M. Kessels ,  Hessel Sprey ,  Jan Willem Maes

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  C23C16/30 ,  C23C16/455

Abstract: The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.

公开(公告)号：US20220367185A1

公开(公告)日：2022-11-17

申请号：US17873369

申请日：2022-07-26

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Shaoren Deng ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3213

Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

公开(公告)号：US20220028870A1

公开(公告)日：2022-01-27

申请号：US17462181

申请日：2021-08-31

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Jan Willem Maes

IPC: H01L27/115 ,  H01L49/02 ,  H01L21/02 ,  H01L27/11582

Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.