公开(公告)号：US11961700B2

公开(公告)日：2024-04-16

申请号：US17601697

申请日：2020-03-25

Applicant: ASML Netherlands B.V.

Inventor： Maikel Robert Goosen ,  Albertus Victor Gerardus Mangnus ,  Lucas Kuindersma

IPC: H01J37/22 ,  G06T7/00 ,  H01J37/28

CPC classification number: H01J37/222 ,  G06T7/001 ,  H01J37/28 ,  G06T2207/10061 ,  G06T2207/20048 ,  G06T2207/30141 ,  H01J2237/223 ,  H01J2237/2817

Abstract: Embodiments consistent with the disclosure herein include methods for image enhancement for a multi-beam charged-particle inspection system. Systems and methods consistent with the present disclosure include analyzing signal information representative of first and second images, wherein the first image is associated with a first beam of a set of beams and the second image is associated with a second beam of the set of beams; detecting, based on the analysis, disturbances in positioning of the first and second beams in relation to a sample; obtaining an image of the sample using the signal information of the first and second beams; and correcting the image of the sample using the identified disturbances.

公开(公告)号：US11881374B2

公开(公告)日：2024-01-23

申请号：US17430307

申请日：2020-02-04

Applicant: ASML Netherlands B.V.

Inventor： Shakeeb Bin Hasan ,  Yan Ren ,  Maikel Robert Goosen ,  Albertus Victor Gerardus Mangnus ,  Erwin Paul Smakman

IPC: H01J37/04 ,  H01J37/28

CPC classification number: H01J37/04 ,  H01J37/28 ,  H01J2237/028

Abstract: Disclosed among other aspects is a charged particle inspection system including an absorbing component and a programmable charged-particle mirror plate arranged to modify the energy distribution of electrons in a beam and shape the beam to reduce the energy spread of the electrons and aberrations of the beam, with the absorbing component including a set of absorbing structures configured as absorbing structures provided on a transparent conductive layer and a method using such an absorbing component and with the programmable charged-particle mirror plate including a set of pixels configured to generate a customized electric field to shape the beam and using such a programmable charged-particle mirror plate.

公开(公告)号：US12230469B2

公开(公告)日：2025-02-18

申请号：US17566518

申请日：2021-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Albertus Victor Gerardus Mangnus ,  Maikel Robert Goosen

IPC: H01J37/153 ,  H01J37/28

Abstract: Disclosed among other aspects is a charged particle inspection system including a phaseplate configured and arranged to modify the local phase of charged particles in a beam to reduce the effects of lens aberrations. The phaseplate is made up of an array of apertures with the voltage and/or a degree of obscuration of the apertures being controlled individually or in groups.

公开(公告)号：US12125671B2

公开(公告)日：2024-10-22

申请号：US17778036

申请日：2020-11-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Stijn Wilem Herman Karel Steenbrink ,  Marco Jan-Jaco Wieland ,  Albertus Victor Gerardus Mangnus

IPC: H01J37/317 ,  H01J37/141 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/3177 ,  H01J37/141 ,  H01J37/1474 ,  H01J37/28 ,  H01J2237/0453 ,  H01J2237/2817

Abstract: A multi-source illumination apparatus for illuminating a sample with charged particles, wherein beams, from a plurality of sources, are arranged such that a beam from at least one source intersects, at a plane of a condenser lens, with at least part of one other beam from a different one of the plurality of sources. The condenser lens is configured to separately collimate the received beams from each source. A manipulator array arrangement is configured to manipulate the collimated beams to generate one or more beams, in a single column, that include charged particles from the plurality of sources. The manipulator array arrangement includes a multi-beam generator configured to receive the plurality of substantially parallel substantially collimated beams generated by the deflector array, and generate a multibeam in dependence on the received plurality of substantially parallel substantially collimated beams, wherein the multi-beam includes a plurality of substantially collimated sub-beams.

公开(公告)号：US11942303B2

公开(公告)日：2024-03-26

申请号：US17359365

申请日：2019-12-06

Applicant: ASML Netherlands B.V.

Inventor： Yan Ren ,  Albertus Victor Gerardus Mangnus

IPC: H01J37/147 ,  G01N23/2251 ,  H01J37/09 ,  H01J37/145 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/1478 ,  G01N23/2251 ,  H01J37/09 ,  H01J37/145 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/28 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507 ,  H01J2237/0455 ,  H01J2237/04926 ,  H01J2237/103 ,  H01J2237/151 ,  H01J2237/226 ,  H01J2237/2611

Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.

公开(公告)号：US11942302B2

公开(公告)日：2024-03-26

申请号：US17361119

申请日：2019-12-17

Applicant: ASML Netherlands B.V.

Inventor： Arno Jan Bleeker ,  Pieter Willem Herman De Jager ,  Maikel Robert Goosen ,  Erwin Paul Smakman ,  Albertus Victor Gerardus Mangnus ,  Yan Ren ,  Adam Lassise

IPC: H01J37/09 ,  H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/1474 ,  H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2817

Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

公开(公告)号：US11821859B2

公开(公告)日：2023-11-21

申请号：US17559950

申请日：2021-12-22

Applicant: ASML Netherlands B.V.

Inventor： Marco Jan-Jaco Wieland ,  Albertus Victor Gerardus Mangnus

IPC: G01N23/2251 ,  G01N23/203 ,  H01J37/10 ,  H01J37/244

CPC classification number: G01N23/2251 ,  G01N23/203 ,  H01J37/10 ,  H01J37/244

Abstract: The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

公开(公告)号：US11791132B2

公开(公告)日：2023-10-17

申请号：US16830204

申请日：2020-03-25

Applicant: ASML Netherlands B.V.

Inventor： Albertus Victor Gerardus Mangnus ,  Maikel Robert Goosen ,  Erwin Paul Smakman

IPC: H01J37/317 ,  H01J37/24 ,  H01J37/244 ,  H01J37/304

CPC classification number: H01J37/3177 ,  H01J37/243 ,  H01J37/244 ,  H01J37/3045 ,  H01J2237/0435

Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.

公开(公告)号：US11442368B2

公开(公告)日：2022-09-13

申请号：US17051287

申请日：2019-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Quintanilha ,  Scott Anderson Middlebrooks ,  Adrianus Cornelis Matheus Koopman ,  Albertus Victor Gerardus Mangnus

IPC: G03F7/20 ,  G01B11/24 ,  G01B15/04

Abstract: A method of determining a measurement sequence for an inspection tool inspecting a structure generated by a lithographic process performed by a lithographic system is presented, the method including deriving a model for the lithographic process as performed by the lithographic system, the model including a relationship between a set of system variables describing the lithographic system and an output variable representing the structure resulting of the lithographic process, determining an observability of one or more system variables in the output variable, and determining the measurement sequence for the inspection tool, based on the observability.

公开(公告)号：US11243179B2

公开(公告)日：2022-02-08

申请号：US16652231

申请日：2018-10-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Erwin Paul Smakman ,  Albertus Victor Gerardus Mangnus ,  Thomas Jarik Huisman

IPC: G01N23/2251 ,  G01B15/00 ,  G03F7/20 ,  H01J37/065 ,  H01J37/073 ,  H01J37/22 ,  H01J37/28

Abstract: An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.