公开(公告)号：US08585224B2

公开(公告)日：2013-11-19

申请号：US13763709

申请日：2013-02-10

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Dirk Heinrich Ehm ,  Stephan Muellender ,  Thomas Stein ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dieter Kraus ,  Richard Versluis ,  Marcus Gerhardus Hendrikus Meijerink

IPC: G02B5/08 ,  H01S3/22

CPC classification number: G03B27/16 ,  B82Y10/00 ,  G03F7/70841 ,  G03F7/70883 ,  G03F7/70916 ,  G21K2201/061

Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

Abstract translation: 光学装置，例如 用于EUV光刻的投影曝光装置（1）包括：封闭内部空间（15）的壳体（2）; 布置在壳体（2）中的至少一个优选反射光学元件（4-10,12,14.1-14.6）; 至少一个用于所述壳体（2）的内部空间（15）的真空发生单元（3）; 以及布置在所述内部空间（15）中并且至少包围所述光学元件（4-10,12,14.1-14.5）的光学表面（17,17.1,17.2）的至少一个真空壳体（18,18.1-18.10） 。 污染减少单元与真空壳体（18.1-18.10）相关联，并且至少紧邻光学表面（17,17.1,17.2）处的污染物质特别是水和/或烃的分压降低 与内部空间（15）中的污染物质的分压有关。

公开(公告)号：US20220291591A1

公开(公告)日：2022-09-15

申请号：US17715641

申请日：2022-04-07

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Antonius Theodorus Wilhelmus Kempen ,  Klaus Martin Hummler ,  Johannes Hubertus Josephina Moors ,  Jeroen Hubert Rommers ,  Hubertus Johannes Van De Wiel ,  Andrew David Laforge ,  Fernando Brizuela ,  Rob Carlo Wieggers ,  Umesh Prasad Gomes ,  Elena Nedanovska ,  Celal Korkmaz ,  Alexander Downn Kim ,  Rui Miguel Duarte Rodrigues Nunes ,  Hendrikus Alphonsus Ludovicus Van Dijck ,  William Peter Van Drent ,  Peter Gerardus Jonkers ,  Qiushi Zhu ,  Parham Yaghoobi ,  Jan Steven Christiaan Westerlaken ,  Martinus Hendrikus Antonius Leenders ,  Alexander Igorevich Ershov ,  Igor Vladimirovich Fomenkov ,  Fei Liu ,  Johannes Henricus Wilhelmus Jacobs ,  Alexey Sergeevich Kuznetsov

IPC: G03F7/20

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

公开(公告)号：US11340532B2

公开(公告)日：2022-05-24

申请号：US16977360

申请日：2019-02-28

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Antonius Theodorus Wilhelmus Kempen ,  Klaus Martin Hummler ,  Johannes Hubertus Josephina Moors ,  Jeroen Hubert Rommers ,  Hubertus Johannes Van De Wiel ,  Andrew David Laforge ,  Fernando Brizuela ,  Rob Carlo Wieggers ,  Umesh Prasad Gomes ,  Elena Nedanovska ,  Celal Korkmaz ,  Alexander Downn Kim ,  Rui Miguel Duarte Rodrigues Nunes ,  Hendrikus Alphonsus Ludovicus Van Dijck ,  William Peter Van Drent ,  Peter Gerardus Jonkers ,  Qiushi Zhu ,  Parham Yaghoobi ,  Jan Steven Christiaan Westerlaken ,  Martinus Hendrikus Antonius Leenders ,  Alexander Igorevich Ershov ,  Igor Vladimirovich Fomenkov ,  Fei Liu ,  Johannes Henricus Wilhelmus Jacobs ,  Alexey Sergeevich Kuznetsov

IPC: G03F7/20

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber (26) containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

公开(公告)号：US09363879B2

公开(公告)日：2016-06-07

申请号：US14532897

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Tjarko Adriaan Rudolf Van Empel ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevich Ivanov ,  Erik Roelof Loopstra ,  Johannes Hubertus Josephina Moors ,  Jan Bernard Plechelmus Van Schoot ,  Yuri Johannes Gabriël Van de Vijver ,  Gerardus Hubertus Petrus Maria Swinkels ,  Hendrikus Gijsbertus Schimmel ,  Dzmitry Labetski

IPC: H05G2/00 ,  G03F7/20 ,  H05K7/20

CPC classification number: H05G2/008 ,  G03F7/70175 ,  G03F7/70891 ,  G03F7/70916 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/006 ,  H05K7/2039

Abstract: A module for producing extreme ultraviolet radiation, including an extreme ultraviolet radiation-emitting source, the source being provided with a supply configured to supply a fluid of an ignition material to a predetermined target ignition position and a target-igniting mechanism constructed and arranged to produce a plasma from the ignition material at the target ignition position, the plasma emitting the extreme ultraviolet radiation; a collector mirror constructed and arranged to focus radiation emitted by the plasma at a focal point; and a heat sink having a thermal energy-diverting surface constructed and arranged to divert thermal energy away from the target ignition position, wherein the heat sink is located at a position proximate the target ignition position.

Abstract translation: 一种用于产生极紫外辐射源的模块，包括极紫外辐射发射源，该源提供有被配置为将点火材料的流体供应到预定的目标点火位置的供应，以及构造和布置以产生的点火机构 来自点火材料的等离子体在目标点火位置，等离子体发射极紫外线辐射; 收集器镜，构造和布置成将等离子体发射的辐射聚焦在焦点处; 以及散热器，其具有构造和布置成将热能转移离开目标点火位置的热能转向表面，其中散热器位于靠近目标点火位置的位置。

公开(公告)号：US08980009B2

公开(公告)日：2015-03-17

申请号：US13788790

申请日：2013-03-07

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

IPC: B08B5/00 ,  B08B5/02 ,  B08B7/00 ,  G03F7/20

CPC classification number: B08B5/02 ,  B08B7/00 ,  G03F7/70925

Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

Abstract translation: 本发明涉及通过使清洁气体与污染层接触来至少部分地从EUV反射型光学元件（14）的光学表面（14a）去除污染物层（15）的方法。 在该方法中，将清洁气体的喷嘴（20）引导到污染层（15），以从污染层（15）去除材料。 监测污染层（15）以产生指示污染层（15）的厚度的信号，并且通过相对于光学表面移动清洁气体的喷嘴（20）来控制清洁气体的喷射（20） 14a）使用该信号作为反馈信号。 还公开了一种用于执行该方法的清洁装置（19至24）。 本发明还涉及一种用于产生清洁气体的喷嘴（20）和相应的清洁气体产生装置的方法。

公开(公告)号：US12174552B2

公开(公告)日：2024-12-24

申请号：US17773004

申请日：2020-10-05

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Victor Antonio Perez-Falcon ,  Marcus Adrianus Van De Kerkhof ,  Daniel Leslie Hall ,  Christopher John Mason ,  Arthur Winfried Eduardus Minnaert ,  Johannes Hubertus Josephina Moors ,  Samir A. Nayfeh

IPC: G03F7/00 ,  H01L21/683 ,  H01L21/687

Abstract: Embodiments herein describe methods, devices, and systems for reducing an electric field at a clamp-reticle interface using an enhanced electrostatic clamp. In particular, the electrostatic clamp includes a clamp body, an electrode layer disposed on a top surface of the clamp body, and a plurality of burls that project from a bottom surface of the clamp body, wherein the electrode layer comprises a plurality of cutouts at predetermined locations that vertically correspond to locations of the plurality of burls at the bottom surface of the clamp body.

公开(公告)号：US12117736B2

公开(公告)日：2024-10-15

申请号：US17621472

申请日：2020-06-05

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Satish Achanta ,  Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Stef Marten Johan Janssens ,  Andrey Nikipelov

IPC: G03F7/00 ,  G03F1/82 ,  H01L21/683 ,  H01L21/687

CPC classification number: G03F7/707 ,  G03F1/82 ,  H01L21/6831 ,  H01L21/68721

Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

公开(公告)号：US20240160109A1

公开(公告)日：2024-05-16

申请号：US18508987

申请日：2023-11-14

Applicant: ASML Netherlands B.V.

Inventor： Yue Ma ,  Antonius Theodorus Wilhelmus Kempen ,  Klaus Martin Hummler ,  Johannes Hubertus Josephina Moors ,  Jeroen Hubert Rommers ,  Hubertus Johannes Van De Wiel ,  Andrew David Laforge ,  Fernando Brizuela ,  Rob Carlo Wieggers ,  Umesh Prasad Gomes ,  Elena Nedanovska ,  Celal Korkmaz ,  Alexander Downn Kim ,  Rui Miguel Duarte Rodrigues Nunes ,  Hendrikus Alphonsus Ludovicus Van Dijck ,  William Peter Van Drent ,  Peter Gerardus Jonkers ,  Qiushi Zhu ,  Parham Yaghoobi ,  Jan Steven Christiaan Westerlaken ,  Martinus Hendrikus Antonius Leenders ,  Alexander Igorevich Ershov ,  Igor Vladimirovich Fomenkov ,  Fei Liu ,  Johannes Henricus Wilhelmus Jacobs ,  Alexey Sergeevich Kuznetsov

IPC: G03F7/00

CPC classification number: G03F7/70166 ,  G03F7/70033 ,  G03F7/70883 ,  G03F7/70916 ,  G03F7/70925

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

公开(公告)号：US20220342315A1

公开(公告)日：2022-10-27

申请号：US17621472

申请日：2020-06-05

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Satish Achanta ,  Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Stef Marten Johan Janssens ,  Andrey Nikipelov

IPC: G03F7/20 ,  H01L21/683 ,  G03F1/82 ,  H01L21/687

Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

公开(公告)号：US20210026258A1

公开(公告)日：2021-01-28

申请号：US16982650

申请日：2019-03-11

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Johannes Hubertus Josephina Moors

IPC: G03F7/20

Abstract: A component of a lithographic apparatus, the component having a contaminant trap surface provided with recesses configured to trap contaminant particles and to reduce specular reflection of DUV radiation. The recesses can have at least one dimension less than or equal to about 2 gm, desirably less than 1 gm.