Projection system
    8.
    发明授权

    公开(公告)号:US10248027B2

    公开(公告)日:2019-04-02

    申请号:US15525610

    申请日:2015-11-16

    Abstract: A projection system (PS1) for a lithographic apparatus comprises: an optical path (100); a plurality of sensors (S1-S4); one or more actuators (A1-A4); and a controller (CN). The optical path is operable to receive an input radiation beam (Bin) and to project an output radiation beam (Bout) onto a substrate to form an image. The optical path comprises: a plurality of optical elements (M1-M4), the plurality of optical elements comprising: a first set of at least two optical elements (M1, M4) and a second set of at least one optical element (M2, M3). Each sensor is associated with one of the plurality of optical elements and is operable to determine a position of that optical element. Each actuator is associated with one of the second set of optical elements and is operable to adjust that optical element. The controller is operable to use the one or more actuators to adjust the second set of optical elements in dependence on the determined position of the first set of optical elements so as to at least partially compensate for optical aberrations and/or line-of-sight errors caused by the positions of the first set of optical elements.

    Lithographic method and apparatus

    公开(公告)号:US09958787B2

    公开(公告)日:2018-05-01

    申请号:US14428023

    申请日:2013-09-17

    CPC classification number: G03F7/70425 G03F7/7045 G03F7/70466 G03F7/70475

    Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

Patent Agency Ranking