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公开(公告)号：US20190137861A1
公开(公告)日：2019-05-09
申请号：US16300370
申请日：2017-05-30
Applicant: ASML Netherlands B.V.
Inventor： Pieter Cristiaan DE GROOT , Gerard Frans Jozef SCHASFOORT , Maksym Yuriiovych SLADKOV , Manfred Petrus Johannes Maria DIKKERS , Jozef Maria FINDERS , Pieter-Jan VAN ZWOL , Johannes Jacobus Matheus BASELMANS , Stefan Michael Bruno BAUMER , Laurentius Cornelius DE WINTER , Wouter Joep ENGELEN , Marcus Adrianus VAN DE KERKHOF , Robbert Jan VOOGD
CPC classification number: G03F1/24 , G02B5/0278 , G02B5/0284 , G02B5/22 , G02B2005/1804 , G03F1/42 , G03F1/44 , G03F7/706 , G03F7/70683 , G03F9/7076
Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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公开(公告)号：US20170336712A1
公开(公告)日：2017-11-23
申请号：US15528436
申请日：2015-11-24
Applicant: ASML Netherlands B.V.
Inventor： Jozef Maria FINDERS
CPC classification number: G03F7/705 , G03F7/70125 , G03F7/70441 , G06F17/5009
Abstract: A method including obtaining calculated wavefront phase information caused by a three-dimensional topography of a pattern of a lithographic patterning device, and computing, using a computer processor, an imaging effect of the three-dimensional topography of the patterning device pattern based on the calculated wavefront information.
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公开(公告)号：US20170315441A1
公开(公告)日：2017-11-02
申请号：US15528442
申请日：2015-11-26
Applicant: ASML Netherlands B.V.
Inventor： Jozef Maria FINDERS
CPC classification number: G03F1/70 , G03F7/20 , G03F7/70616
Abstract: A method including obtaining wavefront phase information caused by a three-dimensional topography of a pattern of a lithographic patterning device, and based on the wavefront phase information, adjusting a physical parameter of the pattern.
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公开(公告)号：US20170285483A1
公开(公告)日：2017-10-05
申请号：US15532085
申请日：2015-11-25
Applicant: ASML Netherlands B.V.
Inventor： Jozef Maria FINDERS
IPC: G03F7/20
CPC classification number: G03F7/706 , G03F7/70125 , G03F7/70441 , G03F7/705
Abstract: A method including, for an illumination by radiation of a pattern of a lithographic patterning device, obtaining calculated wavefront phase information caused by three-dimensional topography of the pattern, and based on the wavefront phase information, adjusting a parameter of the illumination and/or adjusting a parameter of the pattern.
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5.发明申请METHODS FOR PROVIDING SPACED LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开通过块状共聚物自组装提供基板上的间距平面特征的方法公开(公告)号：US20150380299A1
公开(公告)日：2015-12-31
申请号：US14768423
申请日：2014-02-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Jozef Maria FINDERS , Sander Frederik WUISTER , Eddy Cornelis Antonius VAN DER HEIJDEN , Henri Marie Joseph BOOTS
IPC: H01L21/768 , G03F7/20 , H01L21/3105 , H01L21/268 , H01L21/02 , H01L21/311
CPC classification number: H01L21/76816 , B81C1/00031 , B81C2201/0149 , B82Y40/00 , G03F7/0002 , G03F7/2002 , G03F7/2004 , H01L21/02345 , H01L21/268 , H01L21/31058 , H01L21/31133
Abstract: A method of forming a plurality of regularly spaced lithography features, e.g. contact holes, including: providing a trench on a substrate, the trench having opposing side-walls and a base, with the side-walls having a width therebetween, wherein the trench is formed by photolithography including exposing the substrate using off-axis illumination whereby a modulation is provided to the side-walls of the trench; providing a self-assemblable block copolymer having first and second blocks in the trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in the trench, the layer having first domains of the first block and second domains of the second block; and selectively removing the first domain to form at least one regularly spaced row of lithography features having the second domain along the trench.
Abstract translation: 一种形成多个规则间隔的光刻特征的方法，例如。 接触孔，包括：在衬底上提供沟槽，所述沟槽具有相对的侧壁和底座，其中所述侧壁之间具有宽度，其中所述沟槽通过光刻形成，包括使用离轴照明曝光所述衬底，由此 向沟槽的侧壁提供调制; 提供在沟槽中具有第一和第二嵌段的自组装嵌段共聚物; 使自组装嵌段共聚物自组装成沟槽中的有序层，该层具有第一嵌段的第一区域和第二嵌段的第二区域; 以及选择性地移除所述第一区域以形成沿着所述沟槽具有所述第二结构域的至少一个规则间隔的光刻特征行。
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Patent Agency Ranking
公开(公告)号：US20160179016A1
公开(公告)日：2016-06-23
申请号：US14904395
申请日：2014-07-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Jozef Maria FINDERS
IPC: G03F7/20
CPC classification number: G03F7/70558 , G03F7/705 , G03F7/70625
Abstract: A method of lithography in a lithographic apparatus configured to transfer a pattern from a patterning device onto a substrate, the method including: determining a dose sensitivity of at least part of the pattern at a plurality of values of a dose, wherein the dose sensitivity is not a monotonically increasing or monotonically decreasing function of the dose. A computer product including a processor, a memory and a storage device, wherein the storage device at least stores values of, or a function describing, a dose sensitivity of at least part of a lithographic pattern at a plurality of values of dose, wherein the dose sensitivity is not a monotonically increasing or monotonically decreasing function of the dose.
Abstract translation: 一种光刻设备中的光刻方法，其被配置为将图案从图案形成装置转移到衬底上，该方法包括：以剂量的多个值确定至少部分图案的剂量灵敏度，其中剂量敏感度为 不是剂量单调递增或单调递减的功能。 一种包括处理器，存储器和存储设备的计算机产品，其中所述存储设备至少存储在多个剂量值下描述光刻图案的至少一部分的剂量灵敏度的描述或功能的功能，其中， 剂量灵敏度不是剂量单调递增或单调递减的功能。
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7.发明申请LITHOGRAPHIC MASK, LITHOGRAPHIC APPARATUS AND METHOD 有权LITHOGRAPHIC MASK，LITHOGRAPHIC APPARATUS AND METHOD公开(公告)号：US20150138568A1
公开(公告)日：2015-05-21
申请号：US14608011
申请日：2015-01-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Jozef Maria FINDERS
Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.
Abstract translation: 光刻掩模具有基本上对于一定波长的辐射透射的衬底，该衬底具有布置的辐射吸收材料，该结构被配置为将图案应用于该特定波长的辐射束的横截面，其中吸收 材料的厚度基本上等于一定波长除以吸收材料的折射率。
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公开(公告)号：US20140293248A1
公开(公告)日：2014-10-02
申请号：US14261208
申请日：2014-04-24
Applicant: ASML NETHERLANDS B.V. , CARL ZEISS SMT AG
Inventor： Bob STREEFKERK , Johannes Jacobus Matheus BASELMANS , Adrianus Franciscus Petrus ENGELEN , Jozef Maria FINDERS , Paul GRÄUPNER , Johannes Catharinus Hubertus MULKENS , Jan Bernard Plechelmus VAN SCHOOT
IPC: G03F7/20
CPC classification number: G03F7/70341 , G03F7/70333
Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.
Abstract translation: 在浸没光刻设备或设备制造方法中，在成像期间投影图像的焦点位置改变以增加焦点宽度。 在一个实施例中，焦点可以使用浸没式光刻设备的液体供应系统来改变。
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公开(公告)号：US20190324365A1
公开(公告)日：2019-10-24
申请号：US16502674
申请日：2019-07-03
Applicant: ASML Netherlands B.V.
Inventor： Pieter Cristiaan DE GROOT , Gerard Frans Jozef SCHASFOORT , Maksym Yuriiovych SLADKOV , Manfred Petrus Johannes M DIKKERS , Jozef Maria FINDERS , Pieter-Jan VAN ZWOL , Johannes Jacobus Matheus BASELMANS , Stefan Michael Bruno BAUMER , Laurentius Cornelius DE WINTER , Wouter Joep ENGELEN , Marcus Adrianus VAN DE KERKHOF , Robbert Jan VOOGD
Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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公开(公告)号：US20170269480A1
公开(公告)日：2017-09-21
申请号：US15532081
申请日：2015-11-26
Applicant: ASML Netherlands B.V.
Inventor： Jozef Maria FINDERS
CPC classification number: G03F7/201 , G02B17/0652 , G02B17/0657 , G03F1/72 , G03F7/70125 , G03F7/70275 , G03F7/705
Abstract: A method includes measuring properties of a three-dimensional topography of a lithographic patterning device, the patterning device including a pattern and being constructed and arranged to produce a pattern in a cross section of a projection beam of radiation in a lithographic projection system, calculating wavefront phase effects resulting from the measured properties, incorporating the calculated wavefront phase effects into a lithographic model of the lithographic projection system, and determining, based on the lithographic model incorporating the calculated wavefront phase effects, parameters for use in an imaging operation using the lithographic projection system.
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